IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0339919
(2011-12-29)
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등록번호 |
US-9153623
(2015-10-06)
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발명자
/ 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
Amin, Turocy & Watson, LLP
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인용정보 |
피인용 횟수 :
0 인용 특허 :
123 |
초록
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A non-volatile memory device structure comprises a substrate having a surface region and a first dielectric material overlying the surface region. The device structure includes a state change device overlying the first dielectric material, the state change device comprising a first wiring structure
A non-volatile memory device structure comprises a substrate having a surface region and a first dielectric material overlying the surface region. The device structure includes a state change device overlying the first dielectric material, the state change device comprising a first wiring structure configured to spatially extend in a first direction, a switching element comprising a first amorphous silicon material overlying the first wiring structure, and a second wiring structure configured to spatially extend in a second direction perpendicular to the first direction. The device structure includes a first thin film transistor device configured to cause the state change device to change from a first state to a second state. The thin film transistor device comprises a first active region, a second active region, a gate structure overlying a gate dielectric layer, and a channel region. The first active region is in electrical contact with the second wiring structure.
대표청구항
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1. A non-volatile memory device structure comprising: a substrate having a surface region;a first dielectric material overlying the surface region of the substrate;a state change device overlying the first dielectric material, the state change device comprising a first wiring structure configured to
1. A non-volatile memory device structure comprising: a substrate having a surface region;a first dielectric material overlying the surface region of the substrate;a state change device overlying the first dielectric material, the state change device comprising a first wiring structure configured to spatially extend in a first direction, a switching element comprising at least a first undoped amorphous silicon material overlying the first wiring structure, and a second wiring structure configured to spatially extend in a second direction perpendicular to the first direction, the second wiring structure having a first portion and a second portion, the first portion comprising a first metal material overlying with the switching element; anda first thin film transistor device operably connected with and at least in part overlying the state change device and comprising a first active region, a second active region, a gate structure overlying a gate dielectric layer, and a channel region, the first active region being configured to be in electrical contact with the first portion of the second wiring structure. 2. The device of claim 1 wherein the first thin film transistor device is a control transistor configured to cause the state change device to change from a first state to a second state, wherein the first state and the second state are selected, without replacement, from a group consisting of: a high resistance state, a low resistance state. 3. The device of claim 1 wherein each of the first active region, the second active region and the channel region comprises a second amorphous silicon material, wherein the first active region and the second active region are intentionally doped with an impurity species. 4. The device of claim 1 wherein the first wiring structure comprises a material selected from a group consisting of: copper, aluminum, tungsten, silver, a doped semiconductor material. 5. The device of claim 1 wherein the first active region is overlying with the first portion of the second wiring structure. 6. The device of claim 1 further comprises a second thin film transistor device operably coupled to the state change device and configured as a select transistor for the state change device. 7. The device of claim 1 wherein the gate structure comprises a material selected from a group consisting of: a polysilicon material, a polysilicon germanium (SiGe) material, a p type impurity characteristic material, an n type impurity characteristic material, a metal silicide material, the metal silicide material is selected from nickel silicide, cobalt silicide, tungsten silicide and titanium silicide. 8. The device of claim 1 where the gate structure comprises a metal material. 9. The device of claim 1 where the gate dielectric comprises silicon oxide, silicon nitride, aluminum oxide, hafnium oxide, or hafnium silicate (HfSiO2), a dielectric stack comprising alternating layers of silicon oxide and silicon nitride (ONO), or any combination thereof. 10. The device of claim 1 wherein the switching element comprises a pillar structure between a crossing of the first wiring structure and the second writing structure. 11. The device of claim 1 wherein the switching element further comprises a p+ polysilicon material interposed between the first undoped silicon material and the first wiring structure. 12. The device of claim 1 wherein the first metal material is selected from a group consisting of: silver, gold, palladium, platinum, nickel, vanadium, chromium, aluminum, a metal characterized by a diffusivity in a presence of an electric field. 13. The device of claim 1wherein the state change device further comprises a thin oxide layer disposed between and in contact with the first metal material and in contact with the first undoped amorphous silicon material; andwherein a thickness of the thin oxide layer is within the range of approximately 20 Å to approximately 50 Å. 14. The device of claim 1 having a size of 6 F2, where F is a feature size of the state change device. 15. A non-volatile memory device structure comprising: a substrate having a surface region;a first dielectric material overlying the surface region of the substrate;a first thin film transistor device overlying the first dielectric material; the first thin film transistor comprising a first active region, a second active region, a gate structure, and a channel region, the gate structure comprising at least a polysilicon material, and the channel region comprising at least a first amorphous silicon material;a state change device overlying the substrate and the first dielectric material and at least in part underlying the first thin film transistor device, the state change device comprising a first wiring structure comprising a doped polysilicon material configured to spatially extend in a first direction, a switching element comprising at least a second undoped amorphous silicon material overlying and in contact with the first wiring structure, and a second wiring structure configured to spatially extend in a second direction perpendicular to the first direction, the second wiring structure having a portion comprising a metal material disposed above the switching element, the first wiring structure being in contact with the first active region of the thin film transistor device, the thin film transistor device being configured to cause the state change device to change from a first state to a second state. 16. The device of claim 15 wherein the state change device further comprises a thin oxide layer, wherein the thin oxide layer is disposed between and in contact with both the metal material and the switching element, wherein the thin oxide layer has a thickness within a range of approximately 20 Å to approximately 50 Å.
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