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Methods for controllably induction heating an article 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
  • H05B-006/10
  • C23C-016/458
  • C23C-016/46
  • C30B-025/10
출원번호 US-0121072 (2008-05-15)
등록번호 US-9155131 (2015-10-06)
발명자 / 주소
  • Sumakeris, Joseph John
  • Paisley, Michael James
출원인 / 주소
  • Cree, Inc.
대리인 / 주소
    Myers Bigel Sibley & Sajovec, PA
인용정보 피인용 횟수 : 0  인용 특허 : 39

초록

A heating device for controllably heating an article defines a processing chamber to hold the article and includes a housing and an EMF generator. The housing includes a susceptor portion surrounding at least a portion of the processing chamber, and a conductor portion interposed between the suscept

대표청구항

1. A method for controllably heating an article, the method comprising: a) positioning the article in a processing chamber;b) applying an electromagnetic field to a housing about the processing chamber such that eddy currents are induced within an outer, susceptor portion of the housing, and such th

이 특허에 인용된 특허 (39)

  1. Kong Hua-Shuang (Raleigh NC) Coleman Thomas G. (Durham NC) Carter ; Jr. Calvin H. (Cary NC), Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product.
  2. Glass Robert C. (Chapel Hill NC) Gaida Walter E. (East Pittsburgh PA) Ronallo Ronald R. (Pittsburgh PA) Hobgood Hudson McDonald (Murrysville PA), Apparatus for growing silicon carbide crystals.
  3. Tsai Charles Su-Chang, Apparatus of chemical vapor for producing layer variation by planetary susceptor rotation.
  4. Norma B. Riley ; Roger N. Anderson ; Grant D. Imper ; Paul Comita, Bi-directional processing chamber and method for bi-directional processing of semiconductor substrates.
  5. Kordina Olle,SEX ; Hallin Christer,SEX ; Janzen Erik,SEX, Device and a method for epitaxially growing objects by CVD.
  6. Kordina Olle,SEX ; Hallin Christer,SEX ; Janzen Erik,SEX, Device and a method for epitaxially growing objects by CVD.
  7. Nordell Nils,SEX ; Schoner Adolf,SEX, Device and a method for epitaxially growing objects by cvd.
  8. Tsai Charles S. (2653 S. Daytona Ave. Hacienda Hts. CA), Device comprising a flat susceptor rotating parallel to a reference surface about a shaft perpendicular to this surface.
  9. Frijlink Peter M. (Crosne FRX), Device comprising a flat susceptor rotating parallel to a reference surface about a shift perpendicular to this surface.
  10. Vehanen Asko Erkki,FIX ; Yakimova Rositza Todorova,SEX ; Tuominen Marko,SEX ; Kordina Olle,SEX ; Hallin Christer,SEX ; Janzen Erik,SEX, Device for epitaxially growing objects.
  11. Ellison Alex,SEX ; Kordina Olle,SEX ; Gu Chun-Yuan,SEX ; Hallin Christer,SEX ; Janzen Erik,SEX ; Tuominen Marko,SEX, Device for epitaxially growing objects and method for such a growth.
  12. Kordina Olle,SEX ; Hermansson Willy,SEX ; Tuominen Marko,SEX, Device for heat treatment of objects and a method for producing a susceptor.
  13. Rupp, Roland; Wiedenhofer, Arno, Device for mounting a substrate and method for producing an insert for a susceptor.
  14. Frijlink Peter (Crosne FRX), Device for protection against an excess pressure.
  15. Frijlink Peter M. (Crosne FRX), Epitaxial growth reactor provided with a planetary support.
  16. Frijlink Peter (Crosne FRX), Epitaxial reactor having a wall which is protected from deposits.
  17. Frijlink Peter (Crosne FRX), Epitaxy reactor having an improved gas collector.
  18. Jancosek David G. (Valparaiso IN) Demorotski Michael (Portage IN) Noelting Gregory (Valparaiso IN), Galvanneal induction furnace temperature control system.
  19. Helmut Aschner DE; Andreas Hauke DE; Karsten Weber DE; Dieter Zernickel DE, Gas driven rotating susceptor for rapid thermal processing (RTP) system.
  20. Bhat Rajaram (Middletown NJ), Gas foil rotating substrate holder.
  21. Paisley, Michael; Sumakeris, Joseph John; Kordina, Olle, Gas-driven rotation apparatus and method for forming silicon carbide layers.
  22. Alexander I. Gurary ; Paul Thomas Fabiano ; David Russell Voorhees ; Scott Beherrell, Induction heated chemical vapor deposition reactor.
  23. Lofgren Peter,SEX ; Gu Chun Yuan,SEX ; Hallin Christer,SEX ; Liu Yujing,SEX, Method and a device for epitaxial growth of objects by chemical vapor deposition.
  24. Rupp Roland,DEX ; Voelkl Johannes,DEX, Method and apparatus for the production of SiC by means of CVD with improved gas utilization.
  25. Frijlink Peter M. (Crosne FRX), Method for epitaxial growth from the vapor phase of semiconductor materials.
  26. Kordina Olle,SEX ; Hallin Christer,SEX ; Janzen Erik,SEX, Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD.
  27. Frijlink Peter M. (Crosne FRX), Method of manufacturing a semiconductor device by vapor phase deposition using multiple inlet flow control.
  28. Mezey ; Sr. James J., Methods and apparatus for thermally processing wafers.
  29. Konig Udo,DEX ; Rodiger Klaus,DEX, Microwave oven and components therefor.
  30. Seelbach Christian A. (Scottsdale AZ) Ingle William M. (Phoenix AZ) Goetz Carl A. (Scottsdale AZ), Process and apparatus for the low pressure chemical vapor deposition of thin films.
  31. Karlheinz Holzlein DE; Roland Rupp DE; Arno Wiedenhofer DE, Process for the thermal annealing of implantation-doped silicon carbide semiconductors.
  32. Aschner Helmut,DEX ; Hauke Andreas,DEX ; Walk Ulrich,DEX ; Zernickel Dieter,DEX, Rapid thermal processing (RTP) system with gas driven rotating substrate.
  33. Leycuras, Andre, Reactor and method for chemical vapor deposition.
  34. Kong Hua-Shuang ; Carter ; Jr. Calvin ; Sumakeris Joseph, Susceptor designs for silicon carbide thin films.
  35. Kordina Olle (Sturefors SEX) Fornell Jan-Olov (Malmo SEX) Berge Rune (Lund SEX) Nilsson Roger (Lund SEX), Susceptor for a device for epitaxially growing objects and such a device.
  36. Kordina Olle (Sturefors SEX) Fornell Jan-Olov (Malmo SEX) Berge Rune (Lund SEX) Nilsson Roger (Lund SEX), Susceptor for a device for epitaxially growing objects and such a device.
  37. Burk ; Jr. Albert A., Susceptor for an epitaxial growth factor.
  38. Frijlink Peter M. (Crosne FRX), Vapor phase epitaxy using complex premixing system.
  39. Kohmura Yukio (Chiba JPX) Toyosaki Koichi (Kisarazu JPX), Vapor phase growth system and a gas-drive motor.
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