초록 ▼

Processes for producing polycrystalline silicon by thermal decomposition of dichlorosilane are disclosed. The processes generally involve thermal decomposition of dichlorosilane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventi

Processes for producing polycrystalline silicon by thermal decomposition of dichlorosilane are disclosed. The processes generally involve thermal decomposition of dichlorosilane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.

대표청구항 ▼

1. A process for producing polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor having a core region and a peripheral region, the process comprising: introducing a first feed gas comprising dichlorosilane into the core region of the fluidized bed reactor,

1. A process for producing polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor having a core region and a peripheral region, the process comprising: introducing a first feed gas comprising dichlorosilane into the core region of the fluidized bed reactor, the fluidized bed reactor containing silicon particles and the temperature of the first feed gas being less than about 600° C., the dichlorosilane thermally decomposing in the fluidized bed reactor to deposit an amount of silicon on the silicon particles; andintroducing a second feed gas into the peripheral region of the fluidized bed reactor, wherein the concentration of dichlorosilane in the first feed gas exceeds the concentration in the second feed gas and the pressure in the fluidized bed reactor is at least about 3 bar, the fluidized bed reactor operating at a conversion of less than about 80% of a conversion at equilibrium. 2. The process as set forth in claim 1 wherein the fluidized bed reactor comprises an annular wall and has a circular cross-section having a center and a radius R, wherein the core region extends from the center to less than about 0.6R and the peripheral region extends from the core region to the annular wall. 3. The process as set forth in claim 1 wherein the fluidized bed reactor operates at less than about 70% equilibrium conversion. 4. The process as set forth in claim 1 wherein the temperature of the first feed gas is less than about 400° C. 5. The process as set forth in claim 1 wherein the temperature of the second feed gas is less than about 600° C. 6. The process as set forth in claim 1 wherein the pressure in the fluidized bed reactor is from about 3 bar to about 8 bar. 7. The process as set forth in claim 1 wherein the concentration (by volume) of dichlorosilane in the first feed gas is at least about 25% greater than the concentration of dichlorosilane in the second feed gas. 8. The process as set forth in claim 1 wherein at least about 60% of the dichlorosilane introduced into the fluidized bed reactor is introduced through the core region. 9. The process as set forth in claim 1 wherein polycrystalline silicon is withdrawn from the fluidized bed reactor, the Sauter mean diameter of the particulate polycrystalline silicon being from about 600 μm to about 1200 μm. 10. The process as set forth in claim 1 wherein the average residence time of the first and second feed gases introduced into the fluidized bed reactor is less than about 12 seconds. 11. The process as set forth in claim 1 wherein the fluidized bed reactor has a cross-section through which the first feed gas and second feed gas pass as dichlorosilane thermally decomposes to deposit an amount of silicon on the silicon particles, wherein at least about 100 kg/hr of silicon deposits on the silicon particles per square meter of fluidized bed reactor cross-section. 12. The process as set forth in claim 1 wherein the silicon particles are continuously withdrawn from the fluidized bed reactor. 13. The process as set forth in claim 1 wherein the second feed gas comprises less than about 50% by volume dichlorosilane. 14. The process as set forth in claim 1 wherein the second feed gas consists essentially of compounds other than dichlorosilane. 15. The process as set forth in claim 1 wherein the second feed gas consists essentially of one or more compounds selected from the group consisting of silicon tetrachloride, hydrogen, argon and helium. 16. The process as set forth in claim 1 wherein the first feed gas comprises at least about 25% by volume dichlorosilane. 17. The process as set forth in claim 1 wherein the overall concentration of dichlorosilane in the first feed gas and the second feed gas is at least about 10% by volume. 18. The process as set forth in claim 1 wherein the conversion of dichlorosilane in the fluidized bed reactor is at least about 30%. 19. The process as set forth in claim 1 wherein the selectivity toward deposited silicon is at least about 20%. 20. The process as set forth in claim 1 wherein the fluidized bed reactor operates at less than about 50% equilibrium conversion. 21. The process as set forth in claim 1 wherein the temperature of the first feed gas is from about 100° C to about 400° C. 22. The process as set forth in claim 1 wherein the temperature of the second feed gas is from about 100° C to about 400° C. 23. The process as set forth in claim 1 wherein the concentration (by volume) of dichlorosilane in the first feed gas is from about 50% to about 200% greater than the concentration (by volume) of dichlorosilane in the second feed gas. 24. The process as set forth in claim 1 wherein at least about 85% of the dichlorosilane introduced into the fluidized bed reactor is introduced through the core region. 25. The process as set forth in claim 1 wherein the average residence time of the first and second feed gases introduced into the fluidized bed reactor is less than about 9 seconds. 26. The process as set forth in claim 1 wherein the fluidized bed reactor has a cross-section through which the first feed gas and second feed gas pass as dichlorosilane thermally decomposes to deposit an amount of silicon on the silicon particles, wherein at least about 250 kg/hr of silicon deposits on the silicon particles per square meter of fluidized bed reactor cross-section. 27. The process as set forth in claim 1 wherein the second feed gas comprises less than about 15% by volume dichlorosilane. 28. The process as set forth in claim 1 wherein the first feed gas comprises at least about 65% by volume dichlorosilane. 29. The process as set forth in claim 1 wherein the overall concentration of dichlorosilane in the first feed gas and the second feed gas is from about 10% to about 80%. 30. The process as set forth in claim 1 wherein the conversion of dichlorosilane in the fluidized bed reactor is at least about 45%. 31. The process as set forth in claim 1 wherein the selectivity toward deposited silicon is from about 20% to about 50%. 32. A process for producing polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor, the fluidized bed reactor having a reaction chamber wall and a cross-section through which a first feed gas and a second feed gas pass, the first feed gas comprising dichlorosilane and the second feed gas comprising at least one compound selected from the group consisting of silicon tetrachloride, hydrogen, argon and helium, the concentration of dichlorosilane in the first feed gas exceeding the concentration in the second feed gas, the fluidized bed reactor producing at least about 100 kg/hr of polycrystalline silicon per square meter of fluidized bed reactor cross-section, the process comprising: directing the second feed gas to the reaction chamber wall and directing the first feed gas inward of the second feed gas, the temperature of the first feed gas being less than about 600° C and the pressure in the fluidized bed reactor being at least about 3 bar, wherein dichlorosilane contacts silicon particles to cause silicon to deposit onto the silicon particles and increase in size, the fluidized bed reactor operating at a conversion of less than about 80% of a conversion at equilibrium. 33. The process as set forth in claim 32 wherein the fluidized bed reactor operates at less than about 60% equilibrium conversion. 34. The process as set forth in claim 32 wherein the temperature of the first feed gas and the temperature of the second feed gas are less than about 400° C. 35. The process as set forth in claim 32 wherein the pressure in the fluidized bed reactor is from about 3 bar to about 8 bar. 36. The process as set forth in claim 32 wherein the concentration (by volume) of dichlorosilane in the first feed gas is at least about 150% greater than the concentration (by volume) of dichlorosilane in the second feed gas. 37. The process as set forth in claim 32 wherein the average residence time of gas introduced into the fluidized bed reactor is from about 1 second to about 12seconds. 38. The process as set forth in claim 32 wherein at least about 175 kg/hr of silicon deposits on the silicon particles per square meter of fluidized bed reactor cross-section. 39. The process as set forth in claim 32 wherein the second feed gas comprises less than about 1% by volume dichlorosilane. 40. The process as set forth in claim 32 wherein the second feed gas consists essentially of compounds other than dichlorosilane. 41. The process as set forth in claim 32 wherein the second feed gas consists essentially of one or more compounds selected from the group consisting of silicon tetrachloride, hydrogen, argon and helium. 42. The process as set forth in claim 32 wherein the first feed gas comprises at least about 95% by volume dichlorosilane. 43. The process as set forth in claim 32 wherein the overall concentration of dichlorosilane in the first feed gas and the second feed gas is at least about 50% by volume. 44. The process as set forth in claim 32 wherein the conversion of dichlorosilane in the fluidized bed reactor is from about 60% to about 98%. 45. The process as set forth in claim 32 wherein the selectivity toward deposited silicon is at least about 40%.