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Vapor deposition system

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/452
  • C23C-016/44
  • C23C-016/455
  • C23C-016/48
  • C23C-016/50
출원번호 US-0025133 (2011-02-10)
등록번호 US-9157152 (2015-10-13)
발명자 / 주소
  • Faguet, Jacques
  • Lee, Eric M.
출원인 / 주소
  • Tokyo Electron Limited
대리인 / 주소
    Wood, Herron & Evans, LLP
인용정보 피인용 횟수 : 4  인용 특허 : 117

초록

A system for depositing a thin film on a substrate using a vapor deposition process is described. The deposition system includes a process chamber having a vacuum pumping system configured to evacuate the process chamber, a substrate holder coupled to the process chamber and configured to support th

대표청구항

1. A deposition system for depositing a thin film on a substrate, comprising: a process chamber having a vacuum pumping system configured to evacuate said process chamber;a substrate holder coupled to said process chamber and configured to support said substrate;a gas distribution system coupled to

이 특허에 인용된 특허 (117)

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  1. Singh, Harmeet, Apparatus for atomic layering etching.
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  3. Sanchez, Errol Antonio C.; Carlson, David K.; Kuppurao, Satheesh, Semiconductor substrate processing system.
  4. Nguyen, Hanh D.; Cruz, Joe Griffith, Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber.
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