A light emitting device includes: a support substrate; at least one light emitting laminate having a structure in which semiconductor layers are laminated and formed on the support substrate; a wall unit formed on the support substrate and surrounding the at least one light emitting laminate; and a
A light emitting device includes: a support substrate; at least one light emitting laminate having a structure in which semiconductor layers are laminated and formed on the support substrate; a wall unit formed on the support substrate and surrounding the at least one light emitting laminate; and a wavelength conversion layer disposed above the at least one light emitting laminate.
대표청구항▼
1. A light emitting device comprising: at least one light emitting laminate having a structure in which a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first and second conductivity-type semiconductor layers, a
1. A light emitting device comprising: at least one light emitting laminate having a structure in which a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first and second conductivity-type semiconductor layers, are laminated;a wall unit surrounding the at least one light emitting laminate;a wavelength conversion layer disposed above the at least one light emitting laminate; anda conductive via extending through the at least one light emitting laminate so as to be electrically connected to one of the first and second conductivity-type semiconductor layers, and electrically isolated from the active layer and the other one of the first and second conductivity-type semiconductor layers. 2. The light emitting device of claim 1, wherein depressions and protrusions are formed on an upper surface of the light emitting laminate. 3. The light emitting device of claim 1, wherein the first and second conductivity-type semiconductor layers are at least one of GaN, AlGaN, InGaN and AlInGaN, and the active layer has a multi-quantum well (MQW) structure in which quantum well layers and quantum barrier layers are an InGaN/GaN structure. 4. The light emitting device of claim 1, wherein a conductive contact layer is formed to reflect light emitted from the active layer toward an upper portion of the light emitting device, and forms an ohmic-contact with the first conductivity-type semiconductor layer. 5. The light emitting device of claim 4, wherein the conductive contact layer includes one or more materials selected from the group consisting of silver (Ag), nickel (Ni), aluminum (Al), rhodium (Rh), palladium (Pd), iridium (Ir), ruthenium (Ru), magnesium (Mg), zinc (Zn), platinum (Pt), gold (Au), or a combination of such materials. 6. The light emitting device of claim 4, wherein an electrode pad is electrically connected to the conductive contact layer and applies an electrical signal to the first conductivity-type semiconductor layer. 7. The light emitting device of claim 4, wherein a side surface of the light emitting layer is sloped with respect to the conductive contact layer. 8. The light emitting device of claim 1, wherein the wall unit is configured to reflect light emitted from lateral sides of the light emitting laminate. 9. The light emitting device of claim 1, wherein a molding part is formed to cover the light emitting laminate within the wall unit. 10. The light emitting device of claim 9, wherein the molding part contains a light diffusing agent, the light diffusing agent includes one or more selected from the group consisting of SiO2, TiO2, and Al2O3. 11. The light emitting device of claim 1, wherein the light emitting laminate emits ultraviolet light. 12. The light emitting device of claim 11, wherein red, green, and blue phosphors are mixedly used. 13. The light emitting device of claim 1, wherein the wavelength conversion layer includes at least one of a MAlSiNx:Re (1≦x≦5) nitride phosphor, an MD:Re sulfide phosphor, wherein M is at least one selected from among Ba, Sr, Ca, and Mg, and D is at least one selected from among S, Se, and Te, while Re is at least one selected from among Eu, Y, La, Ce, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, F, Cl, Br, and I. 14. The light emitting device of claim 1, wherein the wavelength conversion layer includes at least one of an M2SiO4:Re silicate phosphor, an MA2D4:Re sulfide phosphor, a β-SiAlON:Re phosphor, and an MA′2O4:Re′ oxide-based phosphor, wherein M is at least one selected from among Ba, Sr, Ca, and Mg, A is at least one selected from among Ga, Al, and In, D is at least one selected from among S, Se, and Te, A′ is at least one selected from among Sc, Y, Gd, La, Lu, Al, and In, Re is at least one selected from among Eu, Y, La, Ce, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, F, Cl, Br, and I, and Re′ is at least one selected from among Ce, Nd, Pm, Sm, Tb, Dy, Ho, Er, Tm, Yb, F, Cl, Br, and I. 15. The light emitting device of claim 1, wherein the wavelength conversion layer includes quantum dots. 16. The light emitting device of claim 15, wherein the quantum dot is a hetero-joined core and shell structure. 17. The light emitting device of claim 16, wherein the core size ranges from 2 nm to 100 nm. 18. The light emitting device of claim 15, wherein the quantum dot includes one or more semiconductors selected from the group consisting of group II-VI compound semiconductors, group III-V compound semiconductors, and group IV semiconductor. 19. The light emitting device of claim 1, wherein a color distribution of the wavelength conversion layer is adjusted to the MacAdam variance ellipse 3 step level. 20. The light emitting device of claim 1, wherein the wall unit has a structure in which at least one of TiO2 and Ag is dispersed.
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