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Enriched silicon precursor compositions and apparatus and processes for utilizing same

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/265
  • H01L-021/302
  • H01J-037/08
  • H01J-037/317
출원번호 US-0331092 (2014-07-14)
등록번호 US-9171725 (2015-10-27)
발명자 / 주소
  • Mayer, James J.
  • Ray, Richard S.
  • Kaim, Robert
  • Sweeney, Joseph D.
출원인 / 주소
  • ENTEGRIS, INC.
대리인 / 주소
    Hultquist, PLLC
인용정보 피인용 횟수 : 2  인용 특허 : 63

초록

Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition

대표청구항

1. A method of ion implanting silicon, comprising ionizing a silicon dopant composition to form ionized silicon, and contacting the ionized silicon with a substrate to implant silicon therein, wherein the silicon dopant composition comprises at least one silicon compound that is isotopically enriche

이 특허에 인용된 특허 (63)

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이 특허를 인용한 특허 (2)

  1. Kaim, Robert; Sweeney, Joseph D.; Avila, Anthony M.; Ray, Richard S., Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system.
  2. Byl, Oleg; Sweeney, Joseph D., Preparation of high pressure BF3/H2 mixtures.
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