초록 ▼

The present invention relates to a defect inspection apparatus based on the fact that contrasts of a grain and a void of a semiconductor copper interconnect in a scanning electron microscope are changed depending on electron beam irradiation accelerating voltages. A charged particle beam apparatus o

The present invention relates to a defect inspection apparatus based on the fact that contrasts of a grain and a void of a semiconductor copper interconnect in a scanning electron microscope are changed depending on electron beam irradiation accelerating voltages. A charged particle beam apparatus of the present invention irradiates the same portion of a specimen with electron beams at a plurality of accelerating voltages, and differentiates a grain (65, 66) from a void (67) on the basis of a contrast change amount of the same portion in a plurality of images (61, 62) acquired so as to respectively correspond to the plurality of accelerating voltages. Consequently, it is possible to automatically detect a grain and a void in a differentiation manner at a high speed without destructing a specimen.

대표청구항 ▼

1. A charged particle beam apparatus comprising: an electron optical system that focuses electron beams and irradiates a specimen with the electron beams;a detector that detects secondary electrons or reflected electrons generated from the specimen due to irradiation with the electron beams; andan i

1. A charged particle beam apparatus comprising: an electron optical system that focuses electron beams and irradiates a specimen with the electron beams;a detector that detects secondary electrons or reflected electrons generated from the specimen due to irradiation with the electron beams; andan image processing unit that compares a plurality of images with each other so as to detect a defect,wherein the electron optical system irradiates the same portion of the specimen with the electron beams at a plurality of accelerating voltages, andwherein the image processing unit differentiates a grain from a void on the basis of a contrast change amount of the same portion in a plurality of images which are acquired so as to respectively correspond to the plurality of accelerating voltages. 2. The charged particle beam apparatus according to claim 1, wherein the plurality of accelerating voltages are determined on the basis of a difference between contrast dependency of the grain on an accelerating voltage change of the electron beams and contrast dependency of the void on an accelerating voltage change of the electron beams. 3. The charged particle beam apparatus according to claim 1, wherein the plurality of images include at least a first image captured at a first accelerating voltage and a second image captured at a second accelerating voltage different from the first accelerating voltage,wherein a contrast difference between the void and the grain at the first accelerating voltage is larger than a contrast difference between the void and the grain at the second accelerating voltage, andwherein the image processing unit obtains a difference between the first image and the second image by comparing the first image with the second image, and determines that a region of the difference is the void. 4. A charged particle beam apparatus comprising: an electron optical system that focuses electron beams and irradiates a specimen with the electron beams;a detector that detects secondary electrons or reflected electrons generated from the specimen due to irradiation with the electron beams; andan image processing unit that compares a plurality of images with each other so as to detect a defect,wherein the electron optical system irradiates the same portion of the specimen with the electron beams at a plurality of accelerating voltages, andwherein the image processing unit identifies a void located at a depth designated in advance from a surface of the specimen on the basis of a contrast change amount of the same portion in a plurality of images which are acquired so as to respectively correspond to the plurality of accelerating voltages. 5. The charged particle beam apparatus according to claim 4, wherein the plurality of accelerating voltages are determined on the basis of a difference between contrast dependency of avoid located at a first depth on an accelerating voltage change of the electron beams and contrast dependency of a void located at a second depth different from the first depth on an accelerating voltage change of the electron beams. 6. The charged particle beam apparatus according to claim 4, wherein the plurality of images include at least a first image captured at a first accelerating voltage and a second image captured at a second accelerating voltage different from the first accelerating voltage,wherein the first image and the second image include at least an image of a first void and an image of a second void located at a depth different from a depth of the first void,wherein a contrast difference between the first void and the second void at the first accelerating voltage is larger than a contrast difference between the first void and the second void at the second accelerating voltage, andwherein the image processing unit obtains a difference between the first image and the second image by comparing the first image with the second image, and determines that a region of the difference is the first void or the second void.