An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molyb
An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.
대표청구항▼
1. A method for manufacturing a semiconductor device, the method comprising the steps of: forming a metal film over a substrate;forming a metal oxide film over the metal film;forming a nonmetal inorganic film over the metal oxide film;forming an organic compound film over the nonmetal inorganic film
1. A method for manufacturing a semiconductor device, the method comprising the steps of: forming a metal film over a substrate;forming a metal oxide film over the metal film;forming a nonmetal inorganic film over the metal oxide film;forming an organic compound film over the nonmetal inorganic film;forming a transistor over the organic compound film;forming an interlayer insulating film over the transistor;forming a first electrode over the interlayer insulating film;forming a light-emitting layer over the first electrode;forming a second electrode over the light-emitting layer;forming a protective film over the second electrode; andseparating a stacked-body comprising the organic compound film, the transistor, the interlayer insulating film, the first electrode, the light-emitting layer, the second electrode, and the protective film from the substrate,wherein the transistor comprises a semiconductor layer, andwherein the semiconductor layer comprises indium, zinc, and oxygen. 2. The method according to claim 1, wherein the semiconductor layer comprises gallium. 3. The method according to claim 1, wherein the transistor comprises a gate electrode over the semiconductor layer. 4. The method according to claim 1, wherein the transistor comprises a gate electrode below the semiconductor layer. 5. The method according to claim 1, wherein the stacked-body comprises the nonmetal inorganic film. 6. The method according to claim 1, wherein the transistor comprises a source electrode and a drain electrode below the semiconductor layer. 7. The method according to claim 1, wherein the first electrode is formed on and in contact with the interlayer insulating film and the transistor. 8. The method according to claim 1, wherein the transistor comprises a gate insulating film comprising aluminum or titanium. 9. A method for manufacturing a semiconductor device, the method comprising the steps of: forming a metal film over a substrate;forming a metal oxide film over the metal film;forming a nonmetal inorganic film over the metal oxide film;forming an organic compound film over the nonmetal inorganic film;forming a transistor over the organic compound film;forming an interlayer insulating film over the transistor;forming a first electrode over the interlayer insulating film;forming a light-emitting layer over the first electrode;forming a second electrode over the light-emitting layer;forming a protective film over the second electrode;affixing a flexible substrate over the protective film by an adhesive layer; andseparating a stacked-body comprising the organic compound film, the transistor, the interlayer insulating film, the first electrode, the light-emitting layer, the second electrode, and the protective film from the substrate,wherein the transistor comprises a semiconductor layer, andwherein the semiconductor layer comprises indium, zinc, and oxygen. 10. The method according to claim 9, wherein the semiconductor layer comprises gallium. 11. The method according to claim 9, wherein the transistor comprises a gate electrode over the semiconductor layer. 12. The method according to claim 9, wherein the transistor comprises a gate electrode below the semiconductor layer. 13. The method according to claim 9, wherein the stacked-body is separated from the substrate after the flexible substrate is affixed. 14. The method according to claim 9, wherein the stacked-body comprises the nonmetal inorganic film. 15. The method according to claim 9, wherein the transistor comprises a source electrode and a drain electrode below the semiconductor layer. 16. The method according to claim 9, wherein the first electrode is formed on and in contact with the interlayer insulating film and the transistor. 17. The method according to claim 9, wherein the transistor comprises a gate insulating film comprising aluminum or titanium. 18. A method for manufacturing a semiconductor device, the method comprising the steps of: forming a molybdenum film over a substrate;forming a molybdenum oxide film over the molybdenum film;forming a nonmetal inorganic film over the molybdenum oxide film;forming an organic compound film over the nonmetal inorganic film;forming a transistor over the organic compound film;forming an interlayer insulating film over the transistor;forming a first electrode over the interlayer insulating film;forming a light-emitting layer over the first electrode;forming a second electrode over the light-emitting layer;forming a protective film over the second electrode; andseparating a stacked-body comprising the organic compound film, the transistor, the interlayer insulating film, the first electrode, the light-emitting layer, the second electrode, and the protective film from the substrate,wherein the transistor comprises a semiconductor layer, andwherein the semiconductor layer comprises indium, zinc, and oxygen. 19. The method according to claim 18, wherein the semiconductor layer comprises gallium. 20. The method according to claim 18, wherein the transistor comprises a gate electrode over the semiconductor layer. 21. The method according to claim 18, wherein the transistor comprises a gate electrode below the semiconductor layer. 22. The method according to claim 18, comprising the step of affixing a flexible substrate over the protective film by an adhesive layer. 23. The method according to claim 22, wherein the stacked-body is separated from the substrate after the flexible substrate is affixed. 24. The method according to claim 18, wherein the stacked-body comprises the nonmetal inorganic film. 25. The method according to claim 18, wherein the transistor comprises a source electrode and a drain electrode below the semiconductor layer. 26. The method according to claim 18, wherein the first electrode is formed on and in contact with the interlayer insulating film and the transistor. 27. The method according to claim 18, wherein the transistor comprises a gate insulating film comprising aluminum or titanium.
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