초록 ▼

Methods of making Si-containing films that contain relatively high levels of Group III or Group V dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain

Methods of making Si-containing films that contain relatively high levels of Group III or Group V dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain at least about 3×1020 atoms cm−3 of an electrically active dopant. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.

대표청구항 ▼

1. An structure comprising: a substrate; andan as-deposited doped single crystalline Si-containing film directly on the substrate comprising at least about 3×1020 atoms cm−3 of substitutional n-dopant, containing less than about 3×1019 atoms cm−3 of an electrically inactive dopant and having a resis

1. An structure comprising: a substrate; andan as-deposited doped single crystalline Si-containing film directly on the substrate comprising at least about 3×1020 atoms cm−3 of substitutional n-dopant, containing less than about 3×1019 atoms cm−3 of an electrically inactive dopant and having a resistivity of 0.7 mΩ·cm or less, wherein the as-deposited doped single crystalline Si-containing film and substrate have a dopant profile consistent with a layer deposited by chemical vapor deposition (CVD) without post-deposition annealing. 2. The structure of claim 1, wherein the n-dopant comprises phosphorous or arsenic. 3. The structure of claim 2, wherein the as-deposited doped single crystalline Si-containing film further comprises substitutional germanium. 4. The structure of claim 1, wherein the as-deposited doped single crystalline Si-containing film has a resistivity of about 0.5mΩ·cm or less. 5. The structure of claim 1, wherein the as-deposited doped single crystalline Si-containing film has a resistivity of about 0.4mΩ·cm or less. 6. The structure of claim 1, wherein the as-deposited doped single crystalline Si-containing film comprises at least about 4×1020 atoms cm−3 of the n-dopant. 7. The structure of claim 1, wherein the as-deposited doped single crystalline Si-containing film comprises germanium. 8. The structure of claim 1, wherein the as-deposited doped single crystalline Si-containing film contains less than about 2×1019 atoms cm−3 of an electrically inactive dopant. 9. The structure of claim 1, wherein the as-deposited doped single crystalline Si-containing film contains less than about 1×1019 atoms cm−3 of an electrically inactive dopant. 10. An integrated circuit, comprising the structure comprising the as-deposited doped single crystalline Si-containing film of claim 1. 11. The integrated circuit of claim 10, wherein the as-deposited doped single crystalline Si-containing film comprises a contact block that comprises the doped single crystalline Si-containing film. 12. The integrated circuit of claim 10, wherein the as-deposited doped single crystalline Si-containing film comprises an epitaxial emitter that comprises the doped single crystalline Si-containing film.