초록 ▼

An assembly includes an insulated gate bipolar transistor (IGBT), a gate driver and a short-circuit protection circuit. The gate driver is adapted to supply voltage to a gate terminal of the IGBT. The short-circuit protection circuit includes an IGBT short-circuit detector for determining whether th

An assembly includes an insulated gate bipolar transistor (IGBT), a gate driver and a short-circuit protection circuit. The gate driver is adapted to supply voltage to a gate terminal of the IGBT. The short-circuit protection circuit includes an IGBT short-circuit detector for determining whether the IGBT is short-circuited, and a supply voltage regulator for regulating the supply voltage in response to the IGBT short-circuit detector determining that the IGBT is short-circuited.

대표청구항 ▼

1. An assembly comprising: an insulated gate bipolar transistor (IGBT);a gate driver configured to supply voltage to a gate terminal of the IGBT; anda short-circuit protection circuit comprising:an IGBT short-circuit detector configured to determine whether the IGBT is short-circuited; anda supply v

1. An assembly comprising: an insulated gate bipolar transistor (IGBT);a gate driver configured to supply voltage to a gate terminal of the IGBT; anda short-circuit protection circuit comprising:an IGBT short-circuit detector configured to determine whether the IGBT is short-circuited; anda supply voltage regulator configured to regulate the supply voltage in response to a determination by the IGBT short-circuit detector that the IGBT is short-circuited, the supply voltage regulator comprising a circuit having a power source supplying a constant current. 2. The assembly of claim 1, wherein the supply voltage regulator is configured to reduce the supply voltage in response to a determination by the IGBT short-circuit detector that the IGBT is short circuited. 3. The assembly of claim 1, wherein the IGBT further comprises a first IGBT, the gate driver comprises a first gate driver, and the short-circuit protection circuit comprises a first short-circuit protection circuit, the assembly further comprising: a second IGBT;a second gate driver; anda second short-circuit protection circuit,wherein the first and second IGBTs are connected in series. 4. The assembly of claim 3, further comprising a distributor configured to cause the first and second short-circuit protection circuits to synchronously reduce supply voltages in response to a determination that any one of the first and second IGBTs is short circuited. 5. The assembly of claim 1, wherein the short-circuit protection circuit further comprises an IGBT on/off status detector configured to determine if the IGBT is turned on, and wherein the supply voltage regulator is configured to reduce the supply voltage in response to both a determination by the IGBT short-circuit detector that the IGBT is short-circuited and a determination by the on/off status detector that the IGBT is turned on. 6. The assembly of claim 5, wherein the IGBT on/off status detector comprises a circuit configured to determine whether the IGBT is turned on by comparing a sensed voltage at a node coupled to the gate terminal of the IGBT with a reference voltage. 7. The assembly of claim 5, wherein the IGBT further comprises a first IGBT, the gate driver comprises a first gate driver, and the short-circuit protection circuit comprises a first short-circuit protection circuit, and the assembly further comprises: a second IGBT, a second gate driver, and a second short-circuit protection circuit, wherein the first and second IGBTs are connected in series. 8. The assembly of claim 7, further comprising: a distributor configured to cause the first and second short-circuit protection circuits to synchronously reduce supply voltages in response to a determination that the first IGBT or second IGBT is turned on and short circuited. 9. The assembly of claim 1, wherein the IGBT short-circuit detector further comprises a circuit configured to determine whether the IGBT is short-circuited by comparing a detected voltage that is proportional to a collector-emitter voltage of the IGBT with a reference voltage. 10. The assembly of claim 9, wherein the IGBT short-circuit detector further comprises: at least one diode;at least one resistor;at least one capacitor; andat least one comparator. 11. The assembly of claim 1, wherein the supply voltage regulator further comprises at least two voltage reference generators configured to provide relatively higher and lower voltage reference values for generating relatively higher and lower supply voltages respectively. 12. The assembly of claim 1, wherein the supply voltage regulator further comprises a voltage divider configured to obtain more than one voltage from a single power source. 13. A method for protecting an insulated gate bipolar transistor (IGBT) against short circuit conditions, the method comprising: determining whether the IGBT is short-circuited; andreducing a supply voltage applied to a gate terminal of the IGBT in response to a determination that the IGBT is short-circuited, including reducing the supply voltage based on a constant current provided by a power source. 14. The method of claim 13, wherein determining whether the IGBT is short-circuited comprises determining whether the IGBT is turned on, the method further comprising reducing the supply voltage in response to a determination that the IGBT is turned on and short-circuited. 15. The method of claim 14, wherein determining whether the IGBT is turned on comprises comparing a sensed voltage at a node coupled to the gate terminal of the IGBT with a reference voltage. 16. The method of claim 13, wherein determining whether the IGBT is short-circuited is comprises comparing a detected voltage that is proportional to a collector-emitter voltage of the IGBT with a reference voltage.