Process for manufacturing solar cell equipped with electrode having mesh structure
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/00
H01L-031/0236
H01L-031/0224
출원번호
US-0038960
(2013-09-27)
등록번호
US-9231132
(2016-01-05)
우선권정보
JP-2009-066146 (2009-03-18)
발명자
/ 주소
Masunaga, Kumi
Fujimoto, Akira
Nakanishi, Tsutomu
Tsutsumi, Eishi
Kitagawa, Ryota
Asakawa, Koji
Nishizawa, Hideyuki
출원인 / 주소
KABUSHIKI KAISHA TOSHIBA
대리인 / 주소
Oblon, McClelland, Maier & Neustadt, L.L.P.
인용정보
피인용 횟수 :
1인용 특허 :
6
초록▼
A solar cell having on a light incident surface side an electrode with both low resistivity and high transparency to promote efficient excitation of carriers using inexpensive materials. The solar cell includes a photoelectric conversion layer, a first electrode layer arranged on the light incident
A solar cell having on a light incident surface side an electrode with both low resistivity and high transparency to promote efficient excitation of carriers using inexpensive materials. The solar cell includes a photoelectric conversion layer, a first electrode layer arranged on the light incident surface side, and a second electrode layer arranged opposed to the first electrode layer. The first electrode layer has a thickness in the range of 10 to 200 nm, and plural penetrating openings, each of which occupies an area in the range of 80 nm2 to 0.8 μm2, and has an aperture ratio in the range 10 to 66%. The first electrode layer can be produced by etching using an etching mask in the form of a single particle layer of fine particles, or of a dot pattern formed by self-assembly of a block copolymer, or of a stamper.
대표청구항▼
1. A process for manufacturing a solar cell including a photoelectric conversion layer containing at least a p-type semiconductor and an n-type semiconductor, a first electrode layer made of metal and formed on a light incident side surface of said photoelectric conversion layer, and a second electr
1. A process for manufacturing a solar cell including a photoelectric conversion layer containing at least a p-type semiconductor and an n-type semiconductor, a first electrode layer made of metal and formed on a light incident side surface of said photoelectric conversion layer, and a second electrode layer formed on a surface opposite to said light incident side surface; wherein said first electrode layer has a thickness in the range of 10 nm to 200 nm, said first electrode layer has plural penetrating openings each of which occupies an area in the range of 80 nm2 to 0.8 μm2, an average distance between adjacent openings is in the range of 30 nm to 100 nm, and an aperture ratio, which is a ratio of the total area of said openings based on the total area of said first electrode layer, is in the range of 10% to 66%, said process comprising the steps of: forming the photoelectric conversion layer,forming the first electrode layer directly on the light incident side surface of said photoelectric conversion layer, andforming the second electrode layer on the side opposite to the light incident side surface of said photoelectric conversion layer; whereinsaid step of forming the first electrode layer comprises the sub-steps of forming a thin metal layer,preparing a stamper whose surface has a fine relief pattern corresponding to the shape of the first electrode layer intended to be formed,transferring a resist pattern onto at least a part of said thin metal layer by use of said stamper, andetching said thin metal layer by use of said resist pattern as an etching mask, to form the first electrode layer having fine openings. 2. The process according to claim 1, wherein said stamper is produced by use of electron beam exposure. 3. The process according to claim 1, wherein said stamper is produced by: coating a block copolymer-containing composition on at least a part of a stamper precursor, to form a block copolymer layer,causing phase separation of said block copolymer, to form microdomains in a dot pattern, andetching said stamper by use of said dot pattern of microdomains as an etching mask, to form the stamper whose surface has a fine relief pattern corresponding to the shape of the first electrode layer intended to be formed. 4. The process according to claim 1, wherein said stamper is produced by: coating a resist composition on at least a part of a stamper precursor, to form a resist layer,forming a single particle layer of fine particles on the surface of said resist layer,etching said stamper by use of said single particle layer of fine particles pattern mask as an etching mask, to form the stamper whose surface has a fine relief pattern corresponding to the shape of the first electrode layer intended to be formed. 5. The process according to claim 1, wherein said stamper is produced by: coating a resist composition on at least a part of a stamper precursor, to form a resist layer,forming a single particle layer of fine particles on the surface of said resist layer,etching said resist layer by use of said single particle layer as an etching mask, to form a resist pattern,filling openings in said resist pattern with inorganic substance, to form a reverse pattern mask, andetching said stamper by use of said reverse pattern mask as an etching mask, to form the stamper whose surface has a fine relief pattern corresponding to the shape of the first electrode layer intended to be formed. 6. The process according to claim 1, wherein said photo-electric conversion layer comprises a depletion layer at least partly positioned within a distance of 1 μm from the interface between said first electrode layer and said photoelectric conversion layer. 7. The process according to claim 1, wherein said first electrode layer is made of at least one metal selected from the group consisting of aluminum, silver, gold, platinum, nickel, cobalt, chromium, copper and titanium.
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이 특허에 인용된 특허 (6)
Ralf Ludemann DE; Sebastian Schaefer DE, Method for producing contact structures in solar cells.
Kim Tae Jin ; Thio Tineke ; Ebbesen Thomas Wren, Optical transmission control apparatus utilizing metal films perforated with subwavelength-diameter holes.
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