Method of fabricating piezoelectric material with selected c-axis orientation
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C23C-014/34
C23C-014/06
C23C-014/00
C23C-014/02
C23C-014/22
H03H-003/007
출원번호
US-0692108
(2010-01-22)
등록번호
US-9243316
(2016-01-26)
발명자
/ 주소
Larson, III, John
Mishin, Sergey
출원인 / 주소
Avago Technologies General IP (Singapore) Pte. Ltd.
인용정보
피인용 횟수 :
7인용 특허 :
329
초록▼
In accordance with a representative embodiment, a method of fabricating a piezoelectric material comprising a first component and a second component comprises: providing a substrate; flowing hydrogen over the substrate; flowing the first component to form the piezoelectric material over a target; an
In accordance with a representative embodiment, a method of fabricating a piezoelectric material comprising a first component and a second component comprises: providing a substrate; flowing hydrogen over the substrate; flowing the first component to form the piezoelectric material over a target; and sputtering the piezoelectric material from the target on the substrate. In accordance with another representative embodiment, a method of fabricating a bulk acoustic wave (BAW) resonator comprises: forming a first electrode over a substrate; forming a seed layer over the substrate; and depositing a piezoelectric material having a compression-negative (CN) polarity. The depositing of the piezoelectric material comprises: flowing a first component of the piezoelectric material to form the piezoelectric material over a target comprising a second component of the piezoelectric material; and sputtering the piezoelectric material from the target to the substrate.
대표청구항▼
1. A method of fabricating a piezoelectric material comprising a first component and a second component, the method comprising: providing a substrate;initially flowing hydrogen over the substrate;after the initially flowing of the hydrogen over the substrate,flowing the first component to form the p
1. A method of fabricating a piezoelectric material comprising a first component and a second component, the method comprising: providing a substrate;initially flowing hydrogen over the substrate;after the initially flowing of the hydrogen over the substrate,flowing the first component to form the piezoelectric material over a surface of a target comprising the second component;sputtering the piezoelectric material from the target onto the substrate; andflowing the hydrogen over the substrate during the sputtering at a rate sufficient to cause a piezoelectric film having a defined polarity to be formed over the substrate, whereina seed layer is not formed over the substrate prior to the sputtering. 2. A method of fabricating a piezoelectric material as claimed in claim 1, wherein the piezoelectric film comprises a compression-negative (CN) polarity. 3. A method of fabricating a piezoelectric material as claimed in claim 1, wherein the flowing of hydrogen is continuous during the fabricating of the piezoelectric film. 4. A method of fabricating a piezoelectric material as claimed in claim 1, further comprising, after the depositing: ceasing flow of the hydrogen;forming a second substrate over the piezoelectric film; andsputtering the piezoelectric material from the target over the second substrate. 5. A method of fabricating a piezoelectric material as claimed in claim 4, further comprising, before forming the second substrate flowing hydrogen over the second substrate, wherein the piezoelectric material comprises a compression-negative (CN) material. 6. A method of fabricating a piezoelectric material as claimed in claim 3, wherein the substrates comprise a metal. 7. A method of fabricating a piezoelectric material as claimed in claim 6, wherein the metal comprises one of: molybdenum (Mo), aluminum (Al), tungsten (W), platinum (Pt), and ruthenium (Ru). 8. A method of fabricating a piezoelectric material as claimed in claim 1, wherein the first component comprises nitrogen and the second component comprises aluminum. 9. A method of fabricating a piezoelectric material as claimed in claim 4, wherein the piezoelectric material sputtered on the first substrate comprises a compression-negative (CN) material, and the piezoelectric material sputtered over the second substrate comprises a compression-positive (CP) material. 10. A method of fabricating a piezoelectric material as claimed in claim 1, wherein the flowing of hydrogen during the depositing forms NHx. 11. A method of fabricating a bulk acoustic wave (BAW) resonator having a piezoelectric material consisting essentially of first and second components, the method comprising: forming a first electrode over a substrate;forming a seed layer consisting essentially of the second component over the substrate;flowing the first component of the piezoelectric material to form the piezoelectric material over a surface of a target consisting essentially of the second component of the piezoelectric material; andsputtering the piezoelectric material from the target onto the seed layer to deposit a piezoelectric layer having a compression-negative (CN) polarity. 12. A method as of fabricating a BAW resonator as claimed in claim 11, further comprising forming a second electrode over the piezoelectric material. 13. A method as of fabricating a BAW resonator as claimed in claim 11, wherein the seed layer comprises aluminum. 14. A method of fabricating a BAW resonator as claimed in claim 13, wherein the first electrode and the second electrode comprise one of molybdenum (Mo), aluminum (Al), tungsten (W), platinum (Pt), and ruthenium (Ru). 15. A method of fabricating a BAW resonator as claimed in claim 11, further comprising, after the forming of the first electrode and before the forming of the seed layer, forming a plasma and removing a contaminant from a surface of the first electrode. 16. A method of fabricating a BAW resonator as claimed in claim 11, further comprising, after the forming of the seed layer, maintaining a flow of an inert gas over the surface of the seed layer during the depositing of the first component and the piezoelectric material. 17. A method of fabricating a BAW resonator as claimed in claim 12, further comprising, after the depositing of the piezoelectric material: sputtering a second piezoelectric material over the second electrode, wherein the second piezoelectric material comprises a compression-positive (CP) polarity. 18. A method of fabricating a BAW resonator as claimed in claim 12, wherein the first electrode and the second electrode comprise a metal. 19. A method of fabricating a BAW resonator as claimed in claim 18, wherein the metal comprises one of: molybdenum (Mo), aluminum (Al), tungsten (W), platinum (Pt), and ruthenium (Ru). 20. A method of fabricating a BAW resonator as claimed in claim 11, wherein the first component comprises nitrogen and the second component comprises aluminum. 21. A method of fabricating a BAW resonator as claimed in claim 11, wherein the seed layer is selected to foster growth of the piezoelectric material comprising the compression-negative (CN) polarity. 22. A method of fabricating a BAW resonator as claimed in claim 11, wherein vacuum is maintained during the method. 23. The method of claim 11, wherein the first component is nitrogen (N) and the second component is aluminum (Al).
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