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Method of fabricating piezoelectric material with selected c-axis orientation

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-014/34
  • C23C-014/06
  • C23C-014/00
  • C23C-014/02
  • C23C-014/22
  • H03H-003/007
출원번호 US-0692108 (2010-01-22)
등록번호 US-9243316 (2016-01-26)
발명자 / 주소
  • Larson, III, John
  • Mishin, Sergey
출원인 / 주소
  • Avago Technologies General IP (Singapore) Pte. Ltd.
인용정보 피인용 횟수 : 7  인용 특허 : 329

초록

In accordance with a representative embodiment, a method of fabricating a piezoelectric material comprising a first component and a second component comprises: providing a substrate; flowing hydrogen over the substrate; flowing the first component to form the piezoelectric material over a target; an

대표청구항

1. A method of fabricating a piezoelectric material comprising a first component and a second component, the method comprising: providing a substrate;initially flowing hydrogen over the substrate;after the initially flowing of the hydrogen over the substrate,flowing the first component to form the p

이 특허에 인용된 특허 (329)

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