Memory architectures having wiring structures that enable different access patterns in multiple dimensions
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G11C-005/02
G11C-005/06
H01L-027/06
출원번호
US-0673262
(2012-11-09)
등록번호
US-9257152
(2016-02-09)
발명자
/ 주소
Buyuktosunoglu, Alper
Emma, Philip G.
Hartstein, Allan M.
Healy, Michael B.
Kailas, Krishnan K.
출원인 / 주소
GLOBALFOUNDRIES INC.
대리인 / 주소
Scully, Scott, Murphy & Presser, P.C.
인용정보
피인용 횟수 :
0인용 특허 :
20
초록▼
Multi-dimensional memory architectures are provided having access wiring structures that enable different access patterns in multiple dimensions. Furthermore, three-dimensional multiprocessor systems are provided having multi-dimensional cache memory architectures with access wiring structures that
Multi-dimensional memory architectures are provided having access wiring structures that enable different access patterns in multiple dimensions. Furthermore, three-dimensional multiprocessor systems are provided having multi-dimensional cache memory architectures with access wiring structures that enable different access patterns in multiple dimensions.
대표청구항▼
1. A memory structure, comprising: a first array of memory cells, wherein each memory cell in the first array of memory cells comprises a first access device, a second access device, and a storage element connected to the first and second access devices;a first access wiring structure having a first
1. A memory structure, comprising: a first array of memory cells, wherein each memory cell in the first array of memory cells comprises a first access device, a second access device, and a storage element connected to the first and second access devices;a first access wiring structure having a first arrangement of word lines and bit lines, wherein the word lines of the first access wiring structure are configured to control activation and deactivation of the first access devices of the memory cells of the first array at memory cells, and wherein the bit lines of the first access wiring structure are switchably connected to the storage elements of the memory cells of the first array of memory cells through activation of the first access; anda second access wiring structure having a second arrangement of word lines and bit lines, wherein the word lines of the second access wiring structure are configured to control activation and deactivation of the second access devices of the memory cells of the first array of memory cells, and wherein the bit lines of the second access wiring structure are switchably connected to the storage elements of the memory cells of the first array of memory cells through activation of the second access devices;wherein the first arrangement of word lines and bit lines of the first access wiring structure is different from the second arrangement of word lines and bit lines of the second access wiring structure,wherein the bit lines of the first access wiring structure are arranged orthogonal to the bit lines of the second access wiring structure,wherein the word lines of the first access wiring structure extend in a first direction across the first array of memory cells,wherein the word lines of the second access wiring structure extend in a second direction across the first array of memory cells, which is different from the first direction, wherein the first and second directions are non-parallel,wherein the memory structure is configured to perform a first memory access operation to access a plurality of memory cells along the first direction using the first access wiring structure,wherein the memory structure is configured to perform a second memory access operation to access to a plurality of memory cells along the second direction using the second access wiring structure, andwherein the memory structure is configured to perform the first and second memory access operations independently, to access different patients of data from memory cells of the first array of memory cells along the first and second directions. 2. The memory structure of claim 1, wherein the word lines of the first access wiring structure are arranged orthogonal to the word lines of the second access wiring structure. 3. The memory structure of claim 1, wherein word lines of at least one of the first access wiring structure and the second access wiring structure extend in a diagonal direction across the first array of memory cells. 4. The memory structure of claim 1, wherein word lines of at least one of the first access wiring structure and the second access wiring structure extend in a column-shifted direction across the first array of memory cells. 5. The memory structure of claim 1, wherein the first access devices and storage elements of the memory cells of the first array of memory cells and the first access wiring structure are formed on a first substrate, wherein the second access wiring structure and the second access devices of the memory cells of the first array of memory cells are formed on a second substrate, wherein the first and second substrates are stacked on each other, and wherein the first and second substrates comprise vertical through vias to connect the second access devices on the second substrate to corresponding ones of the storage elements on the first substrate. 6. The memory structure of claim 5, wherein the first and second substrates are different memory chips. 7. The memory structure of claim 5, wherein the first and second substrates are different processor chips. 8. The memory structure of claim 1, wherein the first array of memory cells, the first access wiring structure, and the second access wiring structure are formed on a single substrate. 9. The memory structure of claim 8, wherein the single substrate is a memory chip. 10. The memory structure of claim 8, wherein the single substrate is a processor chip. 11. The memory structure of claim 1, further comprising: a second array of memory cells and a third access wiring structure having a third arrangement of word lines and bit lines, wherein each memory cell in the second array of memory cells comprises to second storage element and a third access device connected to the second storage element, wherein the word lines of the third access wiring structure are configured to control activation and deactivation of the third access devices of the memory cells of the second array of memory cells, and wherein the bit lines of the third access wiring structure are switchably connected to the second storage elements of the memory cells of the second array of memory cells through activation of the third access devices; anda fourth access wiring structure comprising, a plurality of word lines which traverse the first and second arrays of memory cells, wherein each word line of the fourth access wiring structure is connected to a memory cell of the second array of memory cells and a memory cell of the first array of memory cells,wherein the word lines of the fourth access wiring structure are configured to control activation and deactivation of memory cells of the first array of memory cells and the second array of memory cells which are connected to the word lines of the fourth access wiring structure. 12. The memory structure of claim 11, wherein the third arrangement of word lines and bit lines has a same arrangement as at least one of the first arrangement, and second arrangement of word lines and bit lines. 13. The memory structure, of claim 11, wherein the first access devices and storage elements of the memory cells of the first array of memory cells and the first access wiring structure are formed on a first substrate, wherein the second access wiring structure and the second access devices of the memory cells of the first array of memory cells are formed on a second substrate, wherein the second array of memory cells and the third access wiring structure are formed on a third substrate, and wherein the first, second, and third substrates are stacked on each other, wherein the first, second and third substrates comprise vertical through vias that form the word lines of the fourth access wiring structure. 14. The memory structure of claim 11, wherein the first array of memory cells, the second array of memory cells, and the first, second, third and fourth access wiring structures are all formed on a single substrate. 15. The memory structure of claim 11, wherein the first array of memory cells, and the first and second access wiring structures are formed on a first substrate, wherein the second array of memory cells and the third access wiring structure are formed on a second substrate, wherein the first and second substrates are stacked on each other, and wherein the first and second substrates comprise vertical through vias that form the word lines of the fourth access wiring structure. 16. The memory structure of claim 1, wherein the memory structure is a cache memory. 17. The memory structure of claim 1, wherein the memory structure is a main system memory. 18. A memory structure, comprising: a first array of memory cells, wherein each memory cell of first array of memory cells comprises a first access device, and a first storage element connected to the first access device;a first access wiring structure having a first arrangement of word lines and hit lines, wherein the word lines of the first access wiring structure are configured to control activation and deactivation of the first access devices of the memory cells of the first array of memory cells, and wherein the bit lines of the first access wiring structure are switchably connected to the first storage elements of the memory cells of the first array of memory cells through activation of the first access devices;a second array of memory cells, wherein each memory cell of the second array of memory cells comprises a second access device, and a second storage element connected to the second access device;a second access wiring structure having a second arrangement of word lines and bit lines, wherein the word lines of the second access wiring structure are configured to control activation and deactivation of the second access devices of the memory cells of the second array of memory cells, and wherein the bit lines of the second access wiring structure are switchably connected to the second storage elements of the memory cells of the second array of memory cells through activation of the second access devices; anda third access wiring structure comprising a plurality of vertical word lines which traverse the first and second arrays of memory cells, wherein each vertical word line of the third access wiring structure is connected to a memory cell of the first array of memory cells and a memory cell of the second array of memory cells,wherein the vertical word lines of the third access wiring structure are configured to control activation and deactivation of memory cells of the first and second arrays of memory cells which are connected to the vertical word lines of the third access wiring, structure,wherein the memory structure is configured to perform a first memory access operation using the first access wiring structure to access data in the first array of memory cells,wherein the memory structure is configured to perform a second memory access operation using, the second access wiring structure to access data in the second array of memory cells, andwherein the memory structure is configured to perform a third memory access operation to access data stored in a first memory cell of the first array of memory cells and data stored in a second memory cell of the second array of memory cells by: activating a vertical word line of a third access wiring structure, which is commonly connected to said first and second memory cells; andactivating a bit line of the first access wiring structure and a bit line of the second access wiring structure to read out the data stored in said first and second memory cells. 19. The memory structure of claim 18, wherein the first arrangement of word lines and bit lines of the first access wiring structure has a same arrangement as the second arrangement of word lines and bit lines of the second access wiring structure. 20. The memory structure of claim 18, wherein the first arrangement of word lines and bit lines of the first access wiring structure is different from the second arrangement of word lines and bit lines of the second access wiring structure. 21. The memory structure of claim 18, wherein the first array of memory cells and the first access wiring structure are formed on a first substrate, wherein the second array of memory cells and the second access wiring structure are formed on a second substrate, wherein the first and second substrates are stacked on each other, and wherein the first and second substrates comprise vertical through vias that form the plurality of vertical word lines of the third access wiring structure. 22. The memory structure of claim 21, wherein the first and second substrates are different memory chips. 23. The memory structure of claim 21, wherein the first and second substrates are different processor chips. 24. The memory structure of claim 18, wherein the first and second arrays of memory cells and the first, second and third access wiring structures are formed on a single substrate. 25. The memory structure of claim 24, wherein the single substrate is a memory chip. 26. The memory structure of claim 24, wherein the single substrate is a processor chip. 27. The memory structure of claim 18, wherein the memory structure is a cache memory. 28. The memory structure of claim 18, wherein the memory structure is a main system memory.
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