Semiconductor light emitting device including hole injection layer
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/00
H01L-029/06
H01L-033/00
H01L-033/06
H01L-033/14
H01L-033/32
H01L-033/12
출원번호
US-0288824
(2014-05-28)
등록번호
US-9257599
(2016-02-09)
우선권정보
KR-10-2013-0102667 (2013-08-28)
발명자
/ 주소
Kim, Jae-kyun
Kim, Joo-sung
Kim, Jun-youn
Park, Young-soo
Tak, Young-jo
출원인 / 주소
Samsung Electronics Co., Ltd.
대리인 / 주소
Harness, Dickey & Pierce, P.L.C.
인용정보
피인용 횟수 :
0인용 특허 :
43
초록▼
According to example embodiments, a semiconductor light emitting device includes a first semiconductor layer, a pit enlarging layer on the first semiconductor layer, an active layer on the pit enlarging layer, a hole injection layer, and a second semiconductor layer on the hole injection layer. The
According to example embodiments, a semiconductor light emitting device includes a first semiconductor layer, a pit enlarging layer on the first semiconductor layer, an active layer on the pit enlarging layer, a hole injection layer, and a second semiconductor layer on the hole injection layer. The first semiconductor layer is doped a first conductive type. An upper surface of the pit enlarging layer and side surfaces of the active layer define pits having sloped surfaces on the dislocations. The pits are reverse pyramidal spaces. The hole injection layer is on a top surface of the active layer and the sloped surfaces of the pits. The second semiconductor layer doped a second conductive type that is different than the first conductive type.
대표청구항▼
1. A semiconductor light emitting device comprising: a first semiconductor layer, the first semiconductor layer being doped a first conductive type and including dislocations therein;a pit enlarging layer on the first semiconductor layer;an active layer on the pit enlarging layer, an upper surface o
1. A semiconductor light emitting device comprising: a first semiconductor layer, the first semiconductor layer being doped a first conductive type and including dislocations therein;a pit enlarging layer on the first semiconductor layer;an active layer on the pit enlarging layer, an upper surface of the pit enlarging layer and side surfaces of the active layer defining pits having sloped surfaces on the dislocations, the pits being reverse pyramidal spaces that extend through the active layer into the pit enlarging layer;a hole injection layer on a top surface of the active layer and the sloped surfaces of the pits, the hole injection layer extending into the pits through the active layer; anda second semiconductor layer on the hole injection layer, the second semiconductor layer being doped a second conductive type that is different than the first conductive type, an energy level of the second semiconductor layer being greater than an energy level of the hole injection layer. 2. The semiconductor light emitting device of claim 1, wherein the active layer has a multiple quantum well (MQW) structure including a plurality of barrier layers and a plurality of quantum well layers that are alternately stacked on each other. 3. The semiconductor light emitting device of claim 2, wherein the hole injection layer contacts all of the plurality of quantum well layers of the active layer along the sloped surfaces of the pits. 4. The semiconductor light emitting device of claim 1, wherein a portion of the hole injection layer contacts the pit enlarging layer. 5. The semiconductor light emitting device of claim 1, wherein the hole injection layer is on the top surface of the active layer and the sloped surface of the pits, anda thickness of the hole injection layer is substantially constant. 6. The semiconductor light emitting device of claim 5, wherein the thickness of the hole injection layer is from about 3 nm to about 5 nm. 7. The semiconductor light emitting device of claim 1, wherein the first semiconductor layer and the second semiconductor layer include GaN,the hole injection layer includes InGaN doped the second conductive type. 8. The semiconductor light emitting device of claim 7, wherein a doping density of a portion of the hole injection layer on the top surface of the active layer is about 1020/cm3, anda doping density of a part of the hole injection layer on the sloped surfaces of the pits is about 7-8×1019/cm3. 9. The semiconductor light emitting device of claim 1, wherein the second semiconductor layer includes a flat top surface, anda lower portion of the second semiconductor layer partially protrudes into the pits. 10. The semiconductor light emitting device of claim 1, further comprising: an electron blocking layer between the active layer and the hole injection layer. 11. The semiconductor light emitting device of claim 10, wherein the electron blocking layer and the hole injection layer are on the top surface of the active layer and the sloped surfaces of the pits, and the electron blocking layer and the hole injection layer, respectively, have substantially constant thicknesses. 12. The semiconductor light emitting device of claim 11, wherein the electron blocking layer includes AlGaN doped the second conductive type, and the hole injection layer includes InGaN doped the second conductive type. 13. A semiconductor light emitting device comprising: a first semiconductor layer, the first semiconductor layer being doped a first conductive type and including dislocations therein;a pit enlarging layer on the first semiconductor layer;an active layer on the pit enlarging layer, an upper surface of the pit enlarging layer and side surfaces of the active layer defining pits having sloped surfaces on the dislocations, the pits being reverse pyramidal spaces;a hole injection layer on a top surface of the active layer and the sloped surfaces of the pits, the hole injection layer including a first hole injection layer and a second hole injection layer;a second semiconductor layer on the hole injection layer, the second semiconductor layer being doped a second conductive type that is different than the first conductive type; andan electron blocking layer formed between the first hole injection layer and the second hole injection layer. 14. The semiconductor light emitting device of claim 13, wherein the electron blocking layer, the first hole injection layer, and the second hole injection layer are on the top surface of the active layer and the sloped surfaces of the pits, and the electron blocking layer, the first hole injection layer, and the second hole injection layer have substantially constant thicknesses, respectively. 15. A method of fabricating a semiconductor light emitting device, the method comprising: growing a first semiconductor layer, the first semiconductor layer being doped a first conductive type, and the first semiconductor layer including dislocations;growing a pit enlarging layer on the first semiconductor layer;growing an active layer on the pit enlarging layer, an upper surface of the pit enlarging layer and side surfaces of the active layer defining pits having sloped surfaces on the dislocations, the pits being reverse pyramidal spaces that extend through the active layer into the pit enlarging layer;growing a hole injection layer on a top surface of the active layer and the sloped surfaces of the pits, the hole injection layer extending into the pits through the active layer; andgrowing a second semiconductor layer on the hole injection layer, the second semiconductor layer being doped a second conductive type that is different than the first conductive type, an energy level of the second semiconductor layer being greater than an energy level of the hole injection layer. 16. The method of claim 15, wherein the growing the active layer includes forming a multiple quantum well (MQW) structure that includes a plurality of barrier layers and a plurality of quantum well layers that are alternately stacked on each other,the growing the hole injection layer includes forming the hole injection layer so the hole injection layer contacts all of the plurality of quantum well layers of the active layer along the sloped surfaces of the pits, andthe growing the hole injection layer includes forming the hole injection layer so a portion of the hole injection layer contacts the pit enlarging layer. 17. The method of claim 15, wherein the growing the hole injection layer includes forming the hole injection layer on the top surface of the active layer and the sloped surface of the pits to a substantially constant thickness. 18. The method of claim 15, wherein the first semiconductor layer and the second semiconductor layer include GaN, andthe hole injection layer includes InGaN doped the second conductive type. 19. The method of claim 15, further comprising: forming an electron blocking layer between the active layer and the hole injection layer, wherein the electron blocking layer includes AlGaN doped the second conductive type, andthe hole injection layer includes InGaN doped the second conductive type. 20. The method of claim 15, further comprising: forming an electron blocking layer on the hole injection layer; andforming an additional hole injection layer on the electron blocking layer.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same.
Kim, YuSik, Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system.
Kim, YuSik, Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system.
Han, Kyung Taeg; Yeo, In Tae; Hahm, Hun Joo; Song, Chang Ho; Han, Seong Yeon; Na, Yoon Sung; Kim, Dae Yeon; Ahn, Ho Sik; Park, Young Sam, Light emitting diode package and fabrication method thereof.
Han, Seong Yeon; Lee, Seon Goo; Song, Chang Ho; Park, Jung Kyu; Park, Young Sam; Han, Kyung Taeg, Light emitting diode package with diffuser and method of manufacturing the same.
Kim, Yu-Sik, Light-emitting element capable of increasing amount of light emitted, light-emitting device including the same, and method of manufacturing light-emitting element and light-emitting device.
Okuyama,Hiroyuki; Biwa,Goshi; Suzuki,Jun, Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Tatsuya Shimoda JP; Satoshi Inoue JP; Wakao Miyazawa JP, Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method.
Yoo, Chul Hee; Jeong, Young June; Park, Young Sam; Han, Seong Yeon; Kim, Ho Yeon; Hahm, Hun Joo; Kim, Hyung Suk, White light emitting device and white light source module using the same.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.