Method for manufacturing sputtering target, method for forming oxide film, and transistor
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C23C-014/08
C01G-015/00
B82Y-030/00
C23C-014/34
H01B-001/08
출원번호
US-0187960
(2014-02-24)
등록번호
US-9267199
(2016-02-23)
우선권정보
JP-2013-038402 (2013-02-28)
발명자
/ 주소
Yamazaki, Shunpei
Tsubuku, Masashi
Oota, Masashi
Kurosawa, Yoichi
Ishihara, Noritaka
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson, Eric J.
인용정보
피인용 횟수 :
0인용 특허 :
47
초록▼
A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which inclu
A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.
대표청구항▼
1. A method for manufacturing a sputtering target, comprising the steps of: forming a polycrystalline In-M-Zn oxide powder from a homologous compound of an In-M-Zn oxide, M representing a metal selected from the group consisting of aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium,
1. A method for manufacturing a sputtering target, comprising the steps of: forming a polycrystalline In-M-Zn oxide powder from a homologous compound of an In-M-Zn oxide, M representing a metal selected from the group consisting of aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium;forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder;forming a compact by compacting the mixture; andsintering the compact. 2. The method for manufacturing a sputtering target according to claim 1, wherein an atomic ratio of zinc in the sputtering target is higher than an atomic ratio of M in the sputtering target. 3. The method for manufacturing a sputtering target according to claim 1, wherein M represents gallium. 4. A method for manufacturing a sputtering target, comprising the steps of: forming a polycrystalline In-M-Zn oxide powder, M representing a metal selected from the group consisting of aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium, by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide;forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder;forming a compact by compacting the mixture; andsintering the compact. 5. The method for manufacturing a sputtering target according to claim 4, wherein an atomic ratio of zinc in the sputtering target is higher than an atomic ratio of M in the sputtering target. 6. The method for manufacturing a sputtering target according to claim 4, wherein the polycrystalline In-M-Zn oxide powder is a homologous compound. 7. The method for manufacturing a sputtering target according to claim 4, wherein M represents gallium.
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