Substrate table, a lithographic apparatus and a device manufacturing method
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G03B-027/52
G03B-027/58
G03F-007/20
출원번호
US-0690032
(2015-04-17)
등록번호
US-9268238
(2016-02-23)
발명자
/ 주소
Ten Kate, Nicolaas
Lafarre, Raymond Wilhelmus Louis
출원인 / 주소
ASML NETHERLANDS B.V.
대리인 / 주소
Pillsbury Winthrop Shaw Pittman LLP
인용정보
피인용 횟수 :
1인용 특허 :
5
초록
A table for a lithographic apparatus, the table having a catchment opening formed in an upper surface of the table, the catchment opening in fluid communication through the table with the environment of the table at a drain opening in a surface of the table other than the upper surface.
대표청구항▼
1. A table for a lithographic apparatus, the table comprising: a catchment opening formed in an upper surface of the table, the catchment opening in fluid communication through the table with a drain opening in a surface of the table other than the upper surface;a first porous structure in a flow pa
1. A table for a lithographic apparatus, the table comprising: a catchment opening formed in an upper surface of the table, the catchment opening in fluid communication through the table with a drain opening in a surface of the table other than the upper surface;a first porous structure in a flow path between the catchment opening and the drain opening, wherein at least part of the flow path is wider than the catchment opening; anda second, further porous structure in the flow path between the catchment opening and the drain opening, wherein the second porous structure is configured to stop liquid flow and accumulate liquid above the second porous structure. 2. The table of claim 1, further comprising a chamber in the flow path, the chamber having the catchment opening at an upper end thereof and an outlet opening at a lower end thereof, wherein at least part of the chamber is wider than the catchment opening and the outlet opening and the first and second porous structures are located between the catchment opening and the outlet opening. 3. The table of claim 1, wherein the catchment opening is in fluid communication with the environment of the table at the drain opening. 4. The table of claim 1, wherein the flow path further comprises a collector portion below the first porous structure and above a substantially vertical or horizontal portion of a channel arrangement fluidly connecting the first porous structure and the drain opening, the collector portion configured to collect immersion liquid and being wider than the substantially vertical or horizontal portion. 5. The table of claim 1, wherein the catchment opening is radially outward of a substrate supporting area on which a substrate is to be supported. 6. The table of claim 1, wherein a surface extending around at least part of the flow path is liquidphobic. 7. The table of claim 1, further comprising a channel arrangement fluidly connecting the first porous structure and the drain opening, the channel arrangement comprising a first substantially vertical portion located below the first porous structure, a substantially horizontally extending portion connected to the first substantially vertical portion and located below the first substantially vertical portion, and a second substantially vertical portion extending downward from the substantially horizontally extending portion. 8. The table of claim 1, wherein a rim of the drain opening protrudes from the surface of the table other than the upper surface. 9. A lithographic apparatus, comprising: a projection system configured to project a beam of radiation through a liquid onto a substrate; anda table comprising a catchment opening formed in an upper surface of the table, the catchment opening in fluid communication through the table with a drain opening in a surface of the table other than the upper surface;a first porous structure in a flow path between the catchment opening and the drain opening, wherein at least part of the flow path is wider than the catchment opening; anda second, further porous structure in the flow path between the catchment opening and the drain opening, wherein the second porous structure is configured to stop liquid flow and accumulate liquid above the second porous structure. 10. The apparatus of claim 9, further comprising a chamber in the flow path, the chamber having the catchment opening at an upper end thereof and an outlet opening at a lower end thereof, wherein at least part of the chamber is wider than the catchment opening and the outlet opening and the first and second porous structures are located between the catchment opening and the outlet opening. 11. The apparatus of claim 9, further comprising a channel arrangement fluidly connecting the first porous structure and the drain opening, the channel arrangement comprising a first substantially vertical portion located below the first porous structure, a substantially horizontally extending portion connected to the first substantially vertical portion and located below the first substantially vertical portion, and a second substantially vertical portion extending downward from the substantially horizontally extending portion. 12. The apparatus of claim 9, wherein the catchment opening is in fluid communication with the environment of the table at the drain opening. 13. The apparatus of claim 9, wherein the flow path further comprises a collector portion below the first porous structure and above a substantially vertical or horizontal portion of a channel arrangement fluidly connecting the first porous structure and the drain opening, the collector portion configured to collect immersion liquid and being wider than the substantially vertical or horizontal portion. 14. The apparatus of claim 9, wherein the catchment opening is radially outward of a substrate supporting area on which a substrate is to be supported. 15. The apparatus of claim 9, wherein a surface extending around at least part of the flow path is liquidphobic. 16. A table for a lithographic apparatus, the table comprising: a support surface configured to support an object;a catchment opening formed in an upper surface of the table, the upper surface located at or below the support surface and the catchment opening in fluid communication through the table with a drain opening in a surface of the table other than the upper surface;a chamber in a flow path between the catchment opening and the drain opening, the chamber configured to collect immersion liquid and the chamber having the catchment opening at an upper end thereof and an outlet opening at a lower end thereof, wherein at least part of the chamber is wider than the catchment opening and the outlet opening; anda porous structure located in the flow path and below the catchment opening, wherein the porous structure is configured to stop liquid flow and accumulate liquid above the porous structure. 17. The table of claim 16, comprising a further porous structure located in the flow path and between the catchment opening and the drain opening. 18. The table of claim 16, wherein a surface extending around at least part of the flow path is liquidphobic. 19. The table of claim 16, wherein the catchment opening is in fluid communication with the environment of the table at the drain opening. 20. The table of claim 16, further comprising a channel arrangement fluidly connecting the chamber and the drain opening, the channel arrangement comprising a first substantially vertical portion located below the chamber, a substantially horizontally extending portion connected to the first substantially vertical portion and located below the first substantially vertical portion, and a second substantially vertical portion extending downward from the substantially horizontally extending portion.
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이 특허에 인용된 특허 (5)
Tabarelli Werner (Schlosstr. 5 Vaduz LIX FL-9490) Lbach Ernst W. (Tonagass 374 Eschen LIX FL-9492), Apparatus for the photolithographic manufacture of integrated circuit elements.
Luttikhuis,Bernardus Antonius Johannes; Van Der Pasch,Engelbertus Antonius Fransiscus; Van Der Ham,Ronald; Roset,Niek Jacobus Johannes, Lithographic apparatus and device manufacturing method.
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