A method for producing a semiconductor device includes solder-connecting a semiconductor chip, onto an insulating substrate including a ceramic board and having conductor layers on two surfaces thereof, with a lead-free solder; warping a radiating base such that a surface of the radiating base on a
A method for producing a semiconductor device includes solder-connecting a semiconductor chip, onto an insulating substrate including a ceramic board and having conductor layers on two surfaces thereof, with a lead-free solder; warping a radiating base such that a surface of the radiating base on a side opposite to the insulating substrate is convex; and solder-connecting the insulating substrate onto the warped radiating base with the lead-free solder so as to provide a substantially flat solder-connected radiating base.
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1. A method for producing a semiconductor device comprising: solder-connecting a semiconductor chip, onto an insulating substrate comprising a ceramic board and having conductor layers on two surfaces thereof, with a lead-free solder,warping a radiating base such that a surface of the radiating base
1. A method for producing a semiconductor device comprising: solder-connecting a semiconductor chip, onto an insulating substrate comprising a ceramic board and having conductor layers on two surfaces thereof, with a lead-free solder,warping a radiating base such that a surface of the radiating base on a side opposite to the insulating substrate is convex, andsolder-connecting the insulating substrate onto the warped radiating base with the lead-free solder so as to provide a substantially flat solder-connected radiating base,wherein the conductive layer on one surface of the insulating substrate solder-connecting to the radiating base has a thickness greater than that of the conductive layer on the other surface of the insulating substrate. 2. The method for producing a semiconductor device according to claim 1, wherein the lead-free solder has a melting point of 250° C. or lower. 3. The method for producing a semiconductor device according to claim 1, wherein the lead-free solder comprises tin and at least one element selected from the group consisting of silver, bismuth, indium, antimony, zinc, aluminum, and copper. 4. The method for producing a semiconductor device according to claim 1, wherein the radiating base is warped to an extent determined by properties of the insulating substrate. 5. The method for producing a semiconductor device according to claim 4, wherein the radiating base is warped to an extent determined by a connection area between the radiating base and the insulating substrate. 6. The method for producing a semiconductor device according to claim 5, wherein the insulating substrate is divided into a plurality of portions, and the radiating base is warped to an extent determined by a connection area between the radiating base and the divided insulating substrate. 7. The method for producing a semiconductor device according to claim 5, wherein the radiating base is warped to an extent determined by a thickness of the conductor layer in the insulating substrate. 8. The method for producing a semiconductor device according to claim 4, wherein the radiating base is warped to an extent determined by a volume ratio between the conductor layers disposed on both surfaces of the ceramic board in the insulating substrate. 9. The method for producing a semiconductor device according to claim 4, wherein the radiating base is warped to an extent detei uiined by a thickness of the ceramic board in the insulating substrate. 10. The method for producing a semiconductor device according to claim 1, wherein the radiating base is warped to an extent determined by a thickness of the radiating base. 11. The method for producing a semiconductor device according to claim 1, wherein, in the insulating substrate, the conductor layers comprise a copper foil, and the ceramic board comprises alumina as a main component. 12. The method for producing a semiconductor device according to claim 1, wherein the radiating base comprises copper. 13. A method for producing a semiconductor device comprising: dividing an insulating substrate having a length of 70 mm and a width of 46 mm to two pieces, each of the two pieces comprising a ceramic board and having conductor layers on two surfaces thereof,solder-connecting each of the two pieces with one semiconductor chip with a lead-free solder,warping a radiating base such that a surface of the radiating base on a side opposite to the insulating substrate is convex, andsolder-connecting each of the two pieces with the one semiconductor chip, onto the warped radiating base, with the lead-free solder so as to provide a substantially flat solder-connected radiating base,wherein a connection area between each of the insulating substrates and the radiating base is greater than or equal to 400 mm2 and less than 1610 mm2. 14. A method for producing a semiconductor device comprising: dividing an insulating substrate having a length of 85 mm and a width of 43 mm to three pieces, each of the three pieces comprising a ceramic board and having conductor layers on two surfaces thereof,solder-connecting each of the three pieces with one semiconductor chip with a lead free solder,warping a radiating base such that a surface of the radiating base on a side opposite to the insulating substrate is convex, andsolder-connecting each of the three pieces with the one semiconductor chip, onto the warped radiating base, with the lead-free solder so as to provide a substantially flat solder-connected radiating base,wherein a connection area between each of the insulating substrates and the radiating base is greater than or equal to 400 mm2 and less than 1204 mm2. 15. The method for producing a semiconductor device according to claim 1, wherein the lead-free solder has a composition of tin and antimony, a composition of tin, silver, bismuth, and indium, or a composition of tin, antimony, and silver. 16. A method for producing a semiconductor device comprising: preparing an insulating substrate comprising a ceramic board, a first conductive layer on one surface of the insulating substrate, and a second conductive layer having a thickness greater than the first conductive layer on another surface of the insulating substrate;solder-connecting a semiconductor chip onto the first conductive layer of the insulating substrate with a first lead-free solder;warping a radiating base so that a concave surface of the radiating base faces toward the second conductive layer on the insulating substrate;solder-connecting the insulating substrate to the radiating base with a second lead-free solder to warp the insulating substrate toward the radiating base to reduce a space between the insulating substrate and the radiating base; andallowing the insulating substrate to return to a flat state after solder-connecting the insulating substrate to the radiating base, to thereby deform the radiating base to be flat or substantially flat.
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이 특허에 인용된 특허 (8)
Nagase, Toshiyuki; Nagatomo, Yoshiyuki; Kubo, Kazuaki; Negishi, Takeshi, Al/AlN joint material, base plate for power module, power module, and manufacturing method of Al/AlN joint material.
Gonya Stephen G. (Endicott NY) Lake James K. (Endicott NY) Long Randy C. (Friendsville PA) Wild Roger N. (Owego NY), Lead-free, high tin, ternary solder alloy of tin, bismuth, and indium.
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