A microelectronic assembly is provided which includes a first element consisting essentially of at least one of semiconductor or inorganic dielectric material having a surface facing and attached to a major surface of a microelectronic element at which a plurality of conductive pads are exposed, the
A microelectronic assembly is provided which includes a first element consisting essentially of at least one of semiconductor or inorganic dielectric material having a surface facing and attached to a major surface of a microelectronic element at which a plurality of conductive pads are exposed, the microelectronic element having active semiconductor devices therein. A first opening extends from an exposed surface of the first element towards the surface attached to the microelectronic element, and a second opening extends from the first opening to a first one of the conductive pads, wherein where the first and second openings meet, interior surfaces of the first and second openings extend at different angles relative to the major surface of the microelectronic element. A conductive element extends within the first and second openings and contacts the at least one conductive pad.
대표청구항▼
1. A method of forming a microelectronic assembly, comprising: (a) attaching a first element consisting essentially of at least one of semiconductor or inorganic dielectric material with a microelectronic element such that a first surface of the first element faces a major surface of the microelectr
1. A method of forming a microelectronic assembly, comprising: (a) attaching a first element consisting essentially of at least one of semiconductor or inorganic dielectric material with a microelectronic element such that a first surface of the first element faces a major surface of the microelectronic element, the microelectronic element having at least one electrically conductive pad having an upper surface exposed at the major surface, the microelectronic element having active semiconductor devices adjacent the major surface;(b) then forming a first conductive element extending through the first element and contacting the upper surface of the at least one conductive pad; and(c) before or after step (b), forming a second conductive element extending through the microelectronic element, the second conductive element contacting the at least one conductive pad or a second conductive pad at the major surface. 2. The method as claimed in claim 1, wherein the first and second conductive elements are exposed at opposite faces of the microelectronic assembly. 3. The method as claimed in claim 1, wherein the microelectronic element includes a plurality of chips attached together at dicing lines, the method further comprising severing the microelectronic assembly along the dicing lanes into individual units, each unit including at least one of the plurality of chips. 4. The method as claimed in claim 3, wherein the first element is a carrier which does not have active semiconductor devices therein. 5. The method as claimed in claim 4, wherein the first element further includes at least one passive device therein. 6. The method as claimed in claim 4, wherein the carrier mechanically supports the microelectronic element. 7. The method as claimed in claim 1, wherein the step of forming the first conductive element includes forming an opening extending through the thickness of the first element after the step of attaching, and then depositing a metal layer at least within the opening in the first element, the metal layer contacting the upper surface of the at least one conductive pad exposed within the opening. 8. The method as claimed in claim 1, wherein the step of forming the second conductive element includes forming an opening extending through the thickness of the microelectronic element after the step of attaching, and then depositing a metal layer at least within the opening, the metal layer contacting the lower surface of the at least one conductive pad exposed within the opening in the microelectronic element. 9. A method of forming a microelectronic assembly, comprising: (a) attaching a first element consisting essentially of at least one of semiconductor or inorganic dielectric material with a microelectronic element such that a first surface of the first element faces a major surface of the microelectronic element, the microelectronic element having a plurality of electrically conductive pads having upper surfaces exposed at the major surface, the microelectronic element having active semiconductor devices adjacent the major surface;(b) then forming a first conductive element extending through the first element and contacting the upper surface of at least one conductive pad; and(c) before or after step (b), doing at least one of thinning the microelectronic element from the rear surface thereof or forming an opening in the microelectronic element extending from the rear surface, such that a second conductive element within the microelectronic element becomes exposed at the rear surface. 10. The method as claimed in claim 9, wherein step (c) includes thinning the microelectronic element. 11. The method as claimed in claim 9, wherein step (c) includes forming the opening extending from the rear surface of the microelectronic element and exposing the second conductive element. 12. The method as claimed in claim 10, wherein step (c) further includes after performing the thinning, forming the opening extending from the thinned rear surface of the microelectronic element and exposing the second conductive element. 13. The method as claimed in claim 7, wherein the step of forming the opening includes forming an initial opening in the first element which extends from a first surface of the first element towards the major surface, and then forming a further opening in the first element extending from the initial opening and at least partially exposing the at least one conductive pad, wherein the initial and the further openings have interior surfaces which intersect at an angle. 14. The method as claimed in claim 1, wherein the microelectronic element is a first microelectronic element, the method further comprising attaching a major surface of a second microelectronic element to a rear surface of the first microelectronic element, then forming an opening extending through the second microelectronic element and at least partially exposing the second conductive element, and forming a third conductive element at least within the opening and contacting the second conductive element. 15. The method as claimed in claim 14, wherein the first and third conductive elements are exposed at opposite faces of the microelectronic assembly. 16. A method of forming a microelectronic assembly, comprising: forming a first conductive element at least within an opening extending from a first surface of a first element at least partially through the first element towards a second surface remote from the first surface, the first conductive element having a portion exposed at the first surface;then attaching the first element with a microelectronic element having active semiconductor devices therein such that the first surface of the first element faces a major surface of the microelectronic element, and the first conductive element at least partly overlies a second conductive element exposed at the major surface of the microelectronic element;forming a third electrically conductive element extending through an opening in the microelectronic element, through the at least one second conductive element, and contacting the first conductive element; andfurther processing to provide a contact exposed at the second surface of the first element after the attaching step, the contact being electrically connected with the third conductive element. 17. The method as claimed in claim 16, wherein the first conductive element is formed such that it extends only partially through the first element, and the step of forming the contact includes thinning the first element from an exposed surface thereof until a portion of the first conductive element is exposed at the exposed surface, the contact being aligned with the opening in the first element. 18. The method as claimed in claim 17, wherein the step of providing the contact includes removing material of the first element from the exposed surface until a portion of the first conductive element projects above the exposed surface by a desired distance and is exposed as a post for electrical interconnection with a component external to the microelectronic assembly. 19. The method as claimed in claim 16, further comprising forming at least one further opening in the first element extending from the second surface to the opening in the first element, wherein the step of forming the contact includes forming a via extending through the further opening, the via electrically connected with the first conductive element. 20. The method as claimed in claim 16, wherein a portion of the first conductive element extends along the first surface of the first element, and the second conductive element is joined to the portion. 21. The method as claimed in claim 16, wherein the step of forming the first conductive element includes simultaneously forming a fourth conductive element at least within the opening in the first element, and the step of forming the third conductive element includes forming a fifth conductive element extending through another opening in the microelectronic element, through a sixth conductive element exposed at the major surface of the microelectronic element, the fifth conductive element contacting the fourth conductive element. 22. A method of forming a microelectronic assembly, comprising: (a) forming (i) a first conductive element at least within an opening extending from a first surface at least partially through a first element towards a second surface remote from the first surface, the first conductive element having a portion exposed at the front surface, and (ii) a metal redistribution layer (RDL) extending along a surface of the first element, the RDL extending away from the first conductive element;(b) then attaching the first element with a microelectronic element having active semiconductor devices therein such that the first surface of the first element faces a major surface of the microelectronic element, and the RDL is juxtaposed with at least one conductive pad of a plurality of conductive pads exposed at the major surface of the microelectronic element;(c) then forming a second conductive element extending through an opening in the microelectronic element, through the at least one conductive pad, and contacting the RDL; and(d) forming a contact exposed at the second surface of the first element after the attaching step, the contact being electrically connected with the first conductive element.
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