A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality o
A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer.
대표청구항▼
1. A nanostructure semiconductor light emitting device, comprising: a first conductivity-type semiconductor base layer;a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer;a plurality of light emitting nanostructures disposed on the base laye
1. A nanostructure semiconductor light emitting device, comprising: a first conductivity-type semiconductor base layer;a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer;a plurality of light emitting nanostructures disposed on the base layer, each of the plurality of light emitting nanostructures being disposed through the respective opening of the plurality of openings, each of the plurality of light emitting nanostructures including a first conductivity-type semiconductor nanocore, an active layer and a second conductivity-type semiconductor layer; anda polycrystalline current suppressing layer disposed on the mask layer,wherein at least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. 2. The nanostructure semiconductor light emitting device of claim 1, wherein the second conductivity-type semiconductor layer includes: a charge carrier blocking layer disposed on the active layer; anda second conductivity-type contact layer disposed on the charge carrier blocking layer. 3. The nanostructure semiconductor light emitting device of claim 2, wherein the polycrystalline current suppressing layer includes: a first polycrystalline layer disposed on the mask layer, the first polycrystalline layer contacting with the charge carrier blocking layer; anda second polycrystalline layer disposed on the first polycrystalline layer, the second polycrystalline layer contacting with the second conductivity-type contact layer. 4. The nanostructure semiconductor light emitting device of claim 3, wherein the first polycrystalline layer includes at least one of elements constituting the charge carrier blocking layer and at least one of elements constituting the mask layer. 5. The nanostructure semiconductor light emitting device of claim 3, wherein the charge carrier blocking layer includes a semiconductor single crystal layer containing aluminium, the mask layer includes a silicon compound having electrical insulating properties, andthe first polycrystalline layer includes a polycrystalline layer formed of a silicon compound containing aluminium. 6. The nanostructure semiconductor light emitting device of claim 1, wherein the mask layer is formed of a silicon oxide, a silicon nitride or a silicon oxynitride. 7. The nanostructure semiconductor light emitting device of claim 3, wherein the second polycrystalline layer includes a polycrystalline layer formed of the same compound as that of the second conductivity-type contact layer. 8. The nanostructure semiconductor light emitting device of claim 1, wherein the polycrystalline current suppressing layer has a thickness of 30 nm to 400 nm. 9. The nanostructure semiconductor light emitting device of claim 1, further comprising a contact electrode layer disposed on the second conductivity-type semiconductor layer and the polycrystalline current suppressing layer. 10. The nanostructure semiconductor light emitting device of claim 1, further comprising a filling layer disposed on the contact electrode layer, the filling layer filling space between the plurality of light emitting nanostructures. 11. The nanostructure semiconductor light emitting device of claim 1, wherein the first conductivity-type semiconductor nanocore includes a rod portion and a tip portion, the rod portion having a crystal plane different from the crystal plane of the tip portion, and the nanostructure semiconductor light emitting device further comprises a current blocking intermediate layer in the tip portion, the current blocking intermediate layer being positioned between the first conductivity-type semiconductor nanocore and the active layer. 12. The nanostructure semiconductor light emitting device of claim 10, wherein the current blocking intermediate layer is either undoped or doped with a conductivity-type impurity different from the conductivity-type impurity of the first conductivity-type semiconductor nanocore. 13. A nanostructure semiconductor light emitting device, comprising: a first conductivity-type semiconductor base layer;an insulating layer disposed on the base layer and having a plurality of openings exposing portions of the base layer;a plurality of light emitting nanostructures disposed on the base layer, each of the plurality of light emitting nanostructures being disposed through the respective opening of the plurality of openings, each of the plurality of light emitting nanostructures including a first conductivity-type semiconductor nanocore, an active layer and a second conductivity-type semiconductor layer;a polycrystalline current suppressing layer disposed on the insulating layer and formed of a polycrystalline compound containing at least a portion of elements constituting the second conductivity-type semiconductor layer;a first electrode formed of a conductive material and disposed on an exposed portion of the base layer; anda second electrode formed of the conductive material. 14. The nanostructure semiconductor light emitting device of claim 13, wherein the plurality of light emitting nanostructures are formed of a nitride semiconductor material, the second conductivity-type semiconductor layer includes a nitride semiconductor layer containing aluminium, andthe at least a portion of elements constituting the second conductivity-type semiconductor layer includes aluminium. 15. The nanostructure semiconductor light emitting device of claim 14, wherein the nitride semiconductor layer containing aluminium is a charge carrier blocking layer disposed on the active layer, and the polycrystalline current suppressing layer contacts with the charge carrier blocking layer. 16. A semiconductor light emitting device package comprising: a package body;one or more lead frames; anda nanostructure semiconductor light emitting device mounted either on the package body or on the one or more lead frames, the nanostructure semiconductor light emitting device being electrically connected to the one or more lead frames through wires, the nanostructure semiconductor light emitting device including:a base layer;a mask layer disposed on the base layer and havinga plurality of openings exposing portions of the base layer;a plurality of light emitting nanostructures disposed on the base layer, each of the plurality of light emitting nanostructures being disposed through the respective opening of the plurality of openings;a polycrystalline current suppressing layer disposed on the mask layer;a first electrode formed of a conductive material and disposed on an exposed portion of the base layer; anda second electrode formed of the conductive material. 17. The semiconductor light emitting device package of claim 16, wherein each of the plurality of light emitting nanostructures including a first conductivity-type semiconductor nanocore, an active layer and a second conductivity-type semiconductor layer. 18. The semiconductor light emitting device package of claim 17, wherein the polycrystalline current suppressing layer is formed of a polycrystalline compound containing at least a portion of elements constituting the second conductivity-type semiconductor layer. 19. The semiconductor light emitting device package of claim 16, further comprising an encapsulation body formed of a light-transmissive material, the encapsulation body encapsulating the nanostructure semiconductor light emitting device and the wires. 20. The semiconductor light emitting device package of claim 17, wherein the first conductivity-type semiconductor nanocore is grown from the base layer.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same.
Kim, YuSik, Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system.
Kim, YuSik, Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system.
Han, Kyung Taeg; Yeo, In Tae; Hahm, Hun Joo; Song, Chang Ho; Han, Seong Yeon; Na, Yoon Sung; Kim, Dae Yeon; Ahn, Ho Sik; Park, Young Sam, Light emitting diode package and fabrication method thereof.
Han, Seong Yeon; Lee, Seon Goo; Song, Chang Ho; Park, Jung Kyu; Park, Young Sam; Han, Kyung Taeg, Light emitting diode package with diffuser and method of manufacturing the same.
Kim, Yu-Sik, Light-emitting element capable of increasing amount of light emitted, light-emitting device including the same, and method of manufacturing light-emitting element and light-emitting device.
Okuyama,Hiroyuki; Biwa,Goshi; Suzuki,Jun, Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Tatsuya Shimoda JP; Satoshi Inoue JP; Wakao Miyazawa JP, Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method.
Yoo, Chul Hee; Jeong, Young June; Park, Young Sam; Han, Seong Yeon; Kim, Ho Yeon; Hahm, Hun Joo; Kim, Hyung Suk, White light emitting device and white light source module using the same.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.