초록

A method of producing projections on a patch including providing a mask on a substrate and etching the substrate using an etchant and a passivant to thereby control the etching process and form the projections, wherein the passivant does not include oxygen.

대표청구항 ▼

1. A method of producing projections on a patch, the method including: a) providing a mask on a substrate; and,b) etching the substrate using an etchant and a passivant to thereby control the etching process and form the projections, wherein the etching process is continuously controlled using the e

1. A method of producing projections on a patch, the method including: a) providing a mask on a substrate; and,b) etching the substrate using an etchant and a passivant to thereby control the etching process and form the projections, wherein the etching process is continuously controlled using the etchant and the passivant, and wherein the passivant does not include oxygen. 2. A method according to claim 1, wherein the mask includes an organic photo-resist. 3. A method according to claim 1, wherein the passivant is a gas including: a) at least one of:i) carbon; and,ii) silicon; and,b) at least one of:i) chlorine; and,ii) fluorine. 4. A method according to claim 1, wherein the passivant is at least one of: a) a per-fluoride hydrocarbon;b) a fluorinated olefine;c) Octafluorocyclobutane;d) Perfluoroisobutene; and,e) C4F8. 5. A method according to claim 1, wherein the etchant is a gas or plasma. 6. A method according to claim 1, wherein the etchant is sulfur hexa-fluoride. 7. A method according to claim 6, wherein a ratio of the etchant to the passivant is in the range of 0.25 to 0.60. 8. A method according to claim 6, wherein the etchant is supplied at a flow rate in the range of 0 to 200 sccm. 9. A method according to claim 1, wherein the method includes, chemically sharpening the projections. 10. A method according to claim 9, wherein the method includes, sharpening the projections by: a) forming a silicon dioxide layer on the projections; and,b) removing the silicon dioxide layer. 11. A method according to claim 10, wherein the method includes removing the silicon dioxide using 10% HF. 12. A method according to claim 1, wherein the method includes applying a coating to the projections. 13. A method according to claim 12, wherein the coating is a metallic coating. 14. A method according to claim 12, wherein the method includes using sputter deposition to deposit: a) an adhesion layer; and,b) a metallic layer on the adhesion layer. 15. A method according to claim 1, wherein the method further includes coating the projections with a therapeutic agent. 16. A method according to claim 1, wherein the patch has a surface area of approximately 0.4 cm2. 17. A method according to claim 1, wherein the projections have a density of 20,000 projections/cm2. 18. A method according to claim 1, wherein the projections have a length of 90 μm. 19. A method according to claim 1, wherein the projections have a radius of curvature of greater than 1 μm. 20. A method according to claim 1, wherein the projections include a support section and a targeting section. 21. A method according to claim 1, wherein the etching process is controlled by ramping etching parameters throughout the etching process. 22. A method according to claim 1, wherein the etching process is performed in multiple stages with different etching parameters being used for each stage. 23. A method according to claim 1, wherein the method includes performing a switched etching process following the continuously controlled etching process. 24. A method according to claim 1, wherein the method includes pausing the etching process and subsequently resuming the etching process. 25. A method according to claim 1, wherein the etching process uses a mixture of the etchant and the passivant. 26. A method according to claim 25, wherein the etching process is controlled by varying a ratio of the etchant to the passivant in the mixture. 27. A method according to claim 26, wherein the etching process is controlled by ramping the ratio throughout the etching process.