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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0157724 (2014-01-17) |
등록번호 | US-9287134 (2016-03-15) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 61 인용 특허 : 595 |
Methods of selectively etching titanium oxide relative to silicon oxide, silicon nitride and/or other dielectrics are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and/or a chlorine-containing precursor. Plasma effluents from t
Methods of selectively etching titanium oxide relative to silicon oxide, silicon nitride and/or other dielectrics are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and/or a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium oxide. The plasmas effluents react with exposed surfaces and selectively remove titanium oxide while very slowly removing other exposed materials. A direction sputtering pretreatment is performed prior to the remote plasma etch and enables an increased selectivity as well as a directional selectivity. In some embodiments, the titanium oxide etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.
1. A method of etching titanium oxide, the method comprising: transferring a patterned substrate, having exposed regions of the titanium oxide, into a substrate processing region;flowing a pretreatment gas into a substrate processing region;forming a local pretreatment plasma in the substrate proces
1. A method of etching titanium oxide, the method comprising: transferring a patterned substrate, having exposed regions of the titanium oxide, into a substrate processing region;flowing a pretreatment gas into a substrate processing region;forming a local pretreatment plasma in the substrate processing region and accelerating ionized components of the pretreatment gas into the titanium oxide;flowing a halogen-containing precursor into a remote plasma region fluidly coupled to a substrate processing region via through-holes in a showerhead while forming a remote plasma in the remote plasma region to produce plasma effluents; andetching the titanium oxide from a substrate disposed within the substrate processing region by flowing the plasma effluents into the substrate processing region through the through-holes in the showerhead. 2. The method of claim 1 wherein the titanium oxide comprises about 20% or more titanium and about 60% or more oxygen. 3. The method of claim 1 wherein the halogen-containing precursor may comprise one or both of fluorine and chlorine. 4. The method of claim 1 wherein the substrate is a patterned substrate which further comprises one or more exposed regions of silicon oxide or silicon nitride. 5. The method of claim 4 wherein the operation of etching the titanium oxide comprises etching titanium oxide faster than silicon nitride by a ratio of about 20:1 or more, or faster than silicon oxide by a ratio of about 15:1 or more. 6. The method of claim 1 wherein a temperature of the substrate is greater than or about 30° C. and less than or about 300° C. during the etching operation. 7. The method of claim 1 wherein the operation of accelerating ionized components of the treatment gas into the titanium oxide occurs before the operation of etching the titanium oxide. 8. A method of etching titanium oxide, the method comprising: transferring a patterned substrate, having titanium oxide, into a substrate processing region;flowing a treatment gas into a substrate processing region;forming a local plasma in the substrate processing region to accelerate ionized components of the treatment gas into the titanium oxide;treating the patterned substrate;flowing a halogen-containing precursor into a remote plasma region fluidly coupled to a substrate processing region via through-holes in a showerhead, wherein the halogen-containing precursor comprises one or more of atomic chlorine, diatomic chlorine, bromine trifluoride, chlorine trifluoride, nitrogen trifluoride, hydrogen chloride, a sulfur chloride such as sulfur dichloride, xenon dichloride, atomic fluorine, diatomic fluorine, bromine trifluoride, chlorine trifluoride, nitrogen trifluoride, hydrogen fluoride, a sulfur fluoride such as sulfur hexafluoride and xenon difluoride;forming a remote plasma in the remote plasma region to produce plasma effluents from the halogen-containing precursor;anisotropically etching the titanium oxide from horizontal portions of the patterned substrate disposed within the substrate processing region by flowing the plasma effluents into the substrate processing region through the through-holes in the showerhead. 9. The method of claim 8 further comprising an additional cycle of treating the patterned substrate and then anisotropically etching the titanium oxide. 10. The method of claim 8 wherein the titanium oxide has a Ti:O atomic ratio of roughly 1:2. 11. The method of claim 8 wherein a cycle of treating the patterned substrate and then anisotropically etching the titanium oxide removes between 30 Å and 200 Å of titanium oxide measured perpendicularly from the main plane of the patterned substrate. 12. The method of claim 8 wherein forming the remote plasma in the remote plasma region to produce plasma effluents comprises applying RF power between about 10 watts and about 2500 watts to the remote plasma region. 13. A method of etching titanium oxide, the method comprising: transferring a patterned substrate, having a conformal titanium oxide layer over three equally-spaced mandrels, into a substrate processing region;flowing a treatment gas into the substrate processing region;forming a local plasma in the substrate processing region to accelerate ionized components of the treatment gas into the titanium oxide;flowing a halogen-containing precursor into a remote plasma region fluidly coupled to a substrate processing region via through-holes in a showerhead;forming a remote plasma in the remote plasma region to produce plasma effluents from the halogen-containing precursor; andetching a portion of the titanium oxide from a substrate disposed within the substrate processing region by flowing the plasma effluents into the substrate processing region through the through-holes in the showerhead. 14. The method of claim 13 wherein the etching operation exposes a top of at least one of the three equally-spaced mandrels while leaving the sides of the three equally-spaced mandrels covered with titanium oxide. 15. The method of claim 13 wherein the etching operation exposes a portion of the patterned substrate between adjacent mandrels of the three equally-spaced mandrels while leaving the sides of the mandrels covered with titanium oxide.
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