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Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and forming a protective portion 41b, failure film formati

Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and forming a protective portion 41b, failure film formation in the electrode hole 46 can be prevented. This can prevent concentration of electric current due to a short circuit between a cathode and an anode of the EL element, and can prevent failure light emission of an EL layer.

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1. A light-emitting device comprising: a substrate;a semiconductor film over the substrate;a gate electrode over the substrate and overlapping with the semiconductor film;a gate insulating film interposed between the semiconductor film and the gate electrode, the gate insulating film comprising sili

1. A light-emitting device comprising: a substrate;a semiconductor film over the substrate;a gate electrode over the substrate and overlapping with the semiconductor film;a gate insulating film interposed between the semiconductor film and the gate electrode, the gate insulating film comprising silicon;a first interlayer insulating film over the semiconductor film, the gate electrode, and the gate insulating film, the first interlayer insulating film comprising silicon;a wiring on the first interlayer insulating film, in a first contact hole formed in the first interlayer insulating film, and in direct contact with the semiconductor film via the first contact hole formed in the first interlayer insulating film;a second interlayer insulating film over the wiring, the second interlayer insulating film comprising a first organic resin;a pixel electrode on the second interlayer insulating film and in electrical contact with the wiring via a second contact hole formed in the second interlayer insulating film;a first protective portion formed from a second organic resin on and in contact with the second interlayer insulating film and a peripheral portion of the pixel electrode, and a second protective portion formed from the second organic resin on and in contact with the pixel electrode in the second contact hole;an EL layer on the pixel electrode, and on the first protective portion and the second protective portion; anda common electrode on the EL layer and overlapping the pixel electrode. 2. The light-emitting device according to claim 1, further comprising a passivation film comprising silicon between the second interlayer insulating film and each of the wiring and the first interlayer insulating film. 3. A light-emitting device comprising: a substrate;a base film on the substrate, the base film being an insulating film having a laminated structure and comprising silicon, nitrogen, and oxygen;a polycrystal silicon film on the base film;a gate insulating film comprising silicon, nitrogen, and oxygen on the polycrystal silicon film;a gate electrode on the gate insulating film and overlapping the polycrystal silicon film, the gate electrode comprising molybdenum;a first interlayer insulating film on the gate electrode and on the gate insulating film, the first interlayer insulating film having a laminated structure comprising a first film containing silicon and nitrogen, and a second film containing silicon and oxygen;a wiring on the first interlayer insulating film and in direct contact with the polycrystal silicon film in a first contact hole formed in the first interlayer insulating film and the gate insulating film, the wiring having a three-layer structure of a film comprising aluminum sandwiched between two films comprising titanium;a second interlayer insulating film over the wiring and the first interlayer insulating film, the second interlayer insulating film comprising a first organic resin;a pixel electrode on and in direct contact with the second interlayer insulating film, and in direct contact with the wiring via a second contact hole formed in the second interlayer insulating film;a first protective portion formed from a second organic resin on and in contact with the second interlayer insulating film and a peripheral portion of the pixel electrode, and a second protective portion formed from the second organic resin on and in contact with the pixel electrode in the second contact hole;an EL layer on the pixel electrode, and on the first protective portion and the second protective portion; anda common electrode on the EL layer and overlapping the pixel electrode. 4. The light-emitting device according to claim 3, further comprising a passivation film between the second interlayer insulating film and each of the wiring and the first interlayer insulating film. 5. The light-emitting device according to claim 3, wherein the second protective portion fills up the second contact hole. 6. The light-emitting device according to claim 3, wherein the substrate is a glass substrate. 7. The light-emitting device according to claim 3, wherein the substrate is a plastic substrate. 8. The light-emitting device according to claim 3, wherein the first protective portion and the second protective portion are separated from each other. 9. The light-emitting device according to claim 3, wherein the first protective portion is formed continuously between the pixel electrode and adjacent pixel electrodes. 10. The light-emitting device according to claim 3, wherein the first protective portion is an insulating monolayer made of the second organic resin and thicker than the pixel electrode. 11. The light-emitting device according to claim 3, wherein the second interlayer insulating film is made of the first organic resin. 12. The light-emitting device according to claim 3, wherein the first organic resin is chosen among the group consisting of a polyimide resin, a first polyamide resin, a first acrylic resin, and a resin containing a high molecular compound of siloxane, andwherein the second organic resin is chosen among the group consisting of a second acrylic resin and a second polyamide resin. 13. The light-emitting device according to claim 3, wherein the second interlayer insulating film has a thickness comprised between 1 μm and 5 μm. 14. The light-emitting device according to claim 3, wherein the first protective portion has a thickness comprised between 1 μm and 2 μm. 15. The light-emitting device according to claim 3, wherein the first contact hole and the second contact hole overlap each other. 16. The light-emitting device according to claim 3, the light-emitting device being an active matrix light-emitting display device comprising an external input/output terminal and a driver circuit on the substrate. 17. A light-emitting device comprising: a substrate;a base film on the substrate, the base film being an insulating film having a laminated structure and comprising silicon, nitrogen, and oxygen;a polycrystal silicon film on the base film;a gate insulating film comprising silicon on the polycrystal silicon film;a gate electrode on the gate insulating film and overlapping the polycrystal silicon film, the gate electrode comprising molybdenum;a first interlayer insulating film on the gate electrode and on the gate insulating film, the first interlayer insulating film having a laminated structure comprising a first film containing silicon and nitrogen, and a second film containing silicon and oxygen;a wiring on the first interlayer insulating film and in direct contact with the polycrystal silicon film in a first contact hole formed in the first interlayer insulating film and the gate insulating film, the wiring having a three-layer structure of a film comprising aluminum sandwiched between two films comprising titanium;a first passivation film on and in contact with the wiring and the first interlayer insulating film, the first passivation film comprising silicon and nitrogen;a second interlayer insulating film on and in contact with the first passivation film, the second interlayer insulating film comprising a first organic resin;a pixel electrode on and in direct contact with the second interlayer insulating film, in a second contact hole formed in the second interlayer insulating film, and in direct contact with a side portion of the first passivation film and on and in direct contact with the wiring in a third contact hole formed in the first passivation film;a first protective portion formed from a second organic resin on and in contact with the second interlayer insulating film and a peripheral portion of the pixel electrode, and a second protective portion formed from the second organic resin on and in contact with the pixel electrode in the second contact hole;an EL layer on the pixel electrode, and on the first protective portion and the second protective portion;a common electrode on the EL layer and overlapping the pixel electrode; anda second passivation film comprising silicon and nitrogen over the common electrode. 18. The light-emitting device according to claim 17, wherein an edge of the second contact hole formed in the second interlayer insulating film and an edge of the third contact hole formed in the first passivation film are contiguous. 19. The light-emitting device according to claim 17, wherein the second protective portion fills up the second contact hole. 20. The light-emitting device according to claim 17, wherein the first passivation film is in direct contact with the second film containing silicon and oxygen of the first interlayer insulating film. 21. The light-emitting device according to claim 17, wherein the substrate is a glass substrate. 22. The light-emitting device according to claim 17, wherein the substrate is a plastic substrate. 23. The light-emitting device according to claim 17, wherein the first protective portion and the second protective portion are separated from each other. 24. The light-emitting device according to claim 17, wherein the first protective portion is formed continuously between the pixel electrode and adjacent pixel electrodes. 25. The light-emitting device according to claim 17, wherein the first protective portion is an insulating monolayer made of the second organic resin and thicker than the pixel electrode. 26. The light-emitting device according to claim 17, wherein the second interlayer insulating film is made of the first organic resin. 27. The light-emitting device according to claim 17, wherein the first organic resin is chosen among the group consisting of a polyimide resin, a first polyamide resin, a first acrylic resin, and a resin containing a high molecular compound of siloxane, andwherein the second organic resin is chosen among the group consisting of a second acrylic resin and a second polyamide resin. 28. The light-emitting device according to claim 17, wherein the second interlayer insulating film has a thickness comprised between 1 μm and 5 μm. 29. The light-emitting device according to claim 17, wherein the first protective portion has a thickness comprised between 1 μm and 2 μm. 30. The light-emitting device according to claim 17, wherein the first contact hole and the second contact hole overlap each other. 31. The light-emitting device according to claim 17, the light-emitting device being an active matrix light-emitting display device comprising an external input/output terminal and a driver circuit on the substrate. 32. A light-emitting device comprising: a substrate;a polycrystal silicon film over the substrate;a gate electrode over the substrate and overlapping with the polycrystal silicon film, the gate electrode comprising molybdenum;a gate insulating film interposed between the polycrystal silicon film and the gate electrode, the gate insulating film comprising silicon and nitrogen;a first interlayer insulating film over the polycrystal silicon film, the gate electrode, and the gate insulating film, the first interlayer insulating film having a laminated structure comprising a first film containing silicon and nitrogen, and a second film containing silicon and oxygen;a wiring on the first interlayer insulating film and in a first contact hole formed in the first interlayer insulating film, the wiring being in direct contact with the polycrystal silicon film via the first contact hole, and having a three-layer structure of a film comprising aluminum sandwiched between two films comprising titanium;a first passivation film on and in contact with the wiring and the first interlayer insulating film, the first passivation film comprising silicon and nitrogena second interlayer insulating film on and in contact with the first passivation film, the second interlayer insulating film comprising a first organic resin;a pixel electrode on and in direct contact with the second interlayer insulating film, in a second contact hole formed in the second interlayer insulating film, and in direct contact with the wiring in a third contact hole formed in the first passivation film and overlapping with the second contact hole;a first protective portion formed from a second organic resin on and in contact with the second interlayer insulating film and a peripheral portion of the pixel electrode, and a second protective portion formed from the second organic resin on and in contact with the pixel electrode in the second contact hole;an EL layer on the pixel electrode, and on the first protective portion and the second protective portion; anda common electrode on the EL layer and overlapping the pixel electrode. 33. The light-emitting device according to claim 32, further comprising: a second passivation film comprising silicon and nitrogen over the common electrode. 34. The light-emitting device according to claim 32, wherein an edge of the second contact hole formed in the second interlayer insulating film and an edge of the third contact hole formed in the first passivation film are contiguous. 35. The light-emitting device according to claim 32, wherein the second protective portion fills up the second contact hole. 36. The light-emitting device according to claim 32, wherein a base film is interposed between the substrate and any of the gate electrode, the gate insulating film, and the polycrystal silicon film. 37. The light-emitting device according to claim 32, wherein the gate electrode is located over the polycrystal silicon film. 38. The light-emitting device according to claim 32, wherein the first passivation film is in direct contact with the second film containing silicon and oxygen of the first interlayer insulating film. 39. The light-emitting device according to claim 32, wherein the pixel electrode is in direct contact with a side portion of the first passivation film in the third contact hole formed in the first passivation film. 40. The light-emitting device according to claim 32, wherein the substrate is a glass substrate. 41. The light-emitting device according to claim 32, wherein the substrate is a plastic substrate. 42. The light-emitting device according to claim 32, wherein the first protective portion and the second protective portion are separated from each other. 43. The light-emitting device according to claim 32, wherein the first protective portion is formed continuously between the pixel electrode and adjacent pixel electrodes. 44. The light-emitting device according to claim 32, wherein the first protective portion is an insulating monolayer made of the second organic resin and thicker than the pixel electrode. 45. The light-emitting device according to claim 32, wherein the second interlayer insulating film is made of the first organic resin. 46. The light-emitting device according to claim 32, wherein the first organic resin is chosen among the group consisting of a polyimide resin, a first polyamide resin, a first acrylic resin, and a resin containing a high molecular compound of siloxane, andwherein the second organic resin is chosen among the group consisting of a second acrylic resin and a second polyamide resin. 47. The light-emitting device according to claim 32, wherein the second interlayer insulating film has a thickness comprised between 1 μm and 5 μm. 48. The light-emitting device according to claim 32, wherein the first protective portion has a thickness comprised between 1 μm and 2 μm. 49. The light-emitting device according to claim 32, wherein the first contact hole and the second contact hole overlap each other. 50. The light-emitting device according to claim 32, the light-emitting device being an active matrix light-emitting display device comprising an external input/output terminal and a driver circuit on the substrate. 51. A light-emitting device comprising: a substrate;a semiconductor film over the substrate;a gate electrode over the substrate and overlapping with the semiconductor film, the gate electrode comprising molybdenum;a gate insulating film interposed between the semiconductor film and the gate electrode, the gate insulating film comprising silicon, nitrogen, and oxygen;a first interlayer insulating film over the semiconductor film, the gate electrode, and the gate insulating film, the first interlayer insulating film comprising silicon;a wiring on the first interlayer insulating film, in a first contact hole formed in the first interlayer insulating film, and in direct contact with the semiconductor film via the first contact hole formed in the first interlayer insulating film;a first passivation film on and in contact with the wiring and the first interlayer insulating film, the first passivation film comprising silicon and oxygen;a second interlayer insulating film on and in contact with the first passivation film, the second interlayer insulating film comprising a first organic resin;a pixel electrode on the second interlayer insulating film and in electrical contact with the wiring via a second contact hole formed in the second interlayer insulating film;a first protective portion formed from a second organic resin on and in contact with the second interlayer insulating film and a peripheral portion of the pixel electrode, and a second protective portion formed from the second organic resin on and in contact with the pixel electrode in the second contact hole;an EL layer on the pixel electrode, and on the first protective portion and the second protective portion; anda common electrode on the EL layer and overlapping the pixel electrode. 52. The light-emitting device according to claim 51, further comprising: a second passivation film comprising silicon and nitrogen over the common electrode. 53. The light-emitting device according to claim 51, wherein the second protective portion fills up the second contact hole. 54. The light-emitting device according to claim 51, wherein a base film is interposed between the substrate and any of the gate electrode and the semiconductor film. 55. The light-emitting device according to claim 51, wherein the gate electrode is located over the semiconductor film. 56. The light-emitting device according to claim 51, wherein the pixel electrode is in direct contact with a side portion of the first passivation film. 57. The light-emitting device according to claim 51, wherein the substrate is a glass substrate. 58. The light-emitting device according to claim 51, wherein the substrate is a plastic substrate. 59. The light-emitting device according to claim 51, wherein the first protective portion and the second protective portion are separated from each other. 60. The light-emitting device according to claim 51, wherein the first protective portion is formed continuously between the pixel electrode and adjacent pixel electrodes. 61. The light-emitting device according to claim 51, wherein the first protective portion is an insulating monolayer made of the second organic resin and thicker than the pixel electrode. 62. The light-emitting device according to claim 51, wherein the second interlayer insulating film is made of the first organic resin. 63. The light-emitting device according to claim 51, wherein the first organic resin is chosen among the group consisting of a polyimide resin, a first polyamide resin, a first acrylic resin, and a resin containing a high molecular compound of siloxane, andwherein the second organic resin is chosen among the group consisting of a second acrylic resin and a second polyamide resin. 64. The light-emitting device according to claim 51, wherein the second interlayer insulating film has a thickness comprised between 1 μm and 5 μm. 65. The light-emitting device according to claim 51, wherein the first protective portion has a thickness comprised between 1 μm and 2 μm. 66. The light-emitting device according to claim 51, wherein the first contact hole and the second contact hole overlap each other. 67. The light-emitting device according to claim 51, the light-emitting device being an active matrix light-emitting display device comprising an external input/output terminal and a driver circuit on the substrate. 68. The light-emitting device according to claim 1, wherein the first protective portion is on and in contact with a first top surface of the peripheral portion of the pixel electrode, andwherein the second protective portion is on and in contact with a second top surface of the pixel electrode outside of the second contact hole. 69. The light-emitting device according to claim 3, wherein the first protective portion is on and in contact with a first top surface of the peripheral portion of the pixel electrode, andwherein the second protective portion is on and in contact with a second top surface of the pixel electrode outside of the second contact hole. 70. The light-emitting device according to claim 17, wherein the first protective portion is on and in contact with a first top surface of the peripheral portion of the pixel electrode, andwherein the second protective portion is on and in contact with a second top surface of the pixel electrode outside of the second contact hole. 71. The light-emitting device according to claim 32, wherein the first protective portion is on and in contact with a first top surface of the peripheral portion of the pixel electrode, andwherein the second protective portion is on and in contact with a second top surface of the pixel electrode outside of the second contact hole. 72. The light-emitting device according to claim 51, wherein the first protective portion is on and in contact with a first top surface of the peripheral portion of the pixel electrode, andwherein the second protective portion is on and in contact with a second top surface of the pixel electrode outside of the second contact hole. 73. A light-emitting device comprising: a substrate;a semiconductor film over the substrate;a gate electrode over the substrate and overlapping with the semiconductor film;a gate insulating film interposed between the semiconductor film and the gate electrode, the gate insulating film comprising silicon;a first interlayer insulating film over the semiconductor film, the gate electrode, and the gate insulating film, the first interlayer insulating film comprising silicon;a wiring on the first interlayer insulating film, in a first contact hole formed in the first interlayer insulating film, and in direct contact with the semiconductor film via the first contact hole formed in the first interlayer insulating film;a second interlayer insulating film over the wiring, the second interlayer insulating film comprising a first organic resin;a pixel electrode on the second interlayer insulating film and in electrical contact with the wiring via a second contact hole formed in the second interlayer insulating film;a first protective portion formed from a second organic resin on and in contact with the second interlayer insulating film, and a second protective portion formed from the second organic resin on and in contact with the pixel electrode in the second contact hole;an EL layer on the pixel electrode, and on the first protective portion and the second protective portion; anda common electrode on the EL layer and overlapping the pixel electrode,wherein the first protective portion and the second protective portion are separated from each other,wherein the first protective portion is on and in contact with a first top surface of a peripheral portion of the pixel electrode, andwherein the second protective portion is on and in contact with a second top surface of the pixel electrode outside of the second contact hole. 74. A light-emitting device comprising: a substrate;a base film on the substrate, the base film being an insulating film having a laminated structure and comprising silicon, nitrogen, and oxygen;a polycrystal silicon film on the base film;a gate insulating film comprising silicon, nitrogen, and oxygen on the polycrystal silicon film;a gate electrode on the gate insulating film and overlapping the polycrystal silicon film, the gate electrode comprising molybdenum;a first interlayer insulating film on the gate electrode and on the gate insulating film, the first interlayer insulating film having a laminated structure comprising a first film containing silicon and nitrogen, and a second film containing silicon and oxygen;a wiring on the first interlayer insulating film and in direct contact with the polycrystal silicon film in a first contact hole formed in the first interlayer insulating film and the gate insulating film, the wiring having a three-layer structure of a film comprising aluminum sandwiched between two films comprising titanium;a second interlayer insulating film over the wiring and the first interlayer insulating film, the second interlayer insulating film comprising a first organic resin;a pixel electrode on and in direct contact with the second interlayer insulating film, and in direct contact with the wiring via a second contact hole formed in the second interlayer insulating film;a first protective portion formed from a second organic resin on and in contact with the second interlayer insulating film, and a second protective portion formed from the second organic resin on and in contact with the pixel electrode in the second contact hole;an EL layer on the pixel electrode, and on the first protective portion and the second protective portion; anda common electrode on the EL layer and overlapping the pixel electrode,wherein the first protective portion and the second protective portion are physically separated from each other,wherein the first protective portion is on and in contact with a first top surface of a peripheral portion of the pixel electrode, andwherein the second protective portion is on and in contact with a second top surface of the pixel electrode outside of the second contact hole. 75. A self-light-emitting device comprising: a semiconductor film;a first insulating film over the semiconductor film;a first conductive film over the first insulating film;a second insulating film over the first conductive film;a second conductive film over the second insulating film;a third insulating film over the second conductive film;a third conductive film over the third insulating film;a fourth insulating film over the third insulating film;a fifth insulating film over the third insulating film;an EL layer over the third conductive film and the fourth insulating film; anda fourth conductive film over the EL layer,wherein the first conductive film has a portion overlapping the semiconductor film with the first insulating film provided therebetween,wherein the second conductive film is electrically connected to the semiconductor film,wherein the third insulating film includes a first organic resin,wherein the third insulating film has a contact hole,wherein the third conductive film is electrically connected to the second conductive film via the contact hole,wherein the third conductive film has a first portion not overlapping the contact hole,wherein the third conductive film has a second portion overlapping the contact hole,wherein the contact hole is filled up with the second portion and the fourth insulating film,wherein a surface of the fourth insulating film in the contact hole has a rising portion higher than a surface of the first portion,wherein the fourth insulating film includes a second organic resin,wherein the fifth insulating film includes the second organic resin,wherein the fourth insulating film does not contact the fifth insulating film,wherein the fifth insulating film has a portion contacting the third insulating film, andwherein the EL layer and the fourth conductive film do not contact the third insulating film in a pixel portion. 76. A method of manufacturing a self-light-emitting device comprising: a first step of forming a semiconductor film;a second step of forming a first insulating film over the semiconductor film;a third step of forming a first conductive film over the first insulating film;a fourth step of forming a second insulating film over the first conductive film;a fifth step of forming a second conductive film over the second insulating film;a sixth step of forming a first organic resin film with a contact hole over the second conductive film;a seventh step of forming a third conductive film over the first organic resin film;an eighth step of forming a film over the first organic resin film and the third conductive film;a ninth step of patterning the film, thereby forming a second organic resin film and a third organic resin film from the film;a tenth step of forming an EL layer over the third conductive film and the second organic resin film; andan eleventh step of forming a fourth conductive film over the EL layer,wherein the first conductive film has a portion overlapping the semiconductor film with the first insulating film provided therebetween,wherein the second conductive film is electrically connected to the semiconductor film,wherein the third conductive film is electrically connected to the second conductive film via the contact hole,wherein the third conductive film has a first portion not overlapping the contact hole,wherein the third conductive film has a second portion overlapping the contact hole,wherein the contact hole is filled up with the second portion and the second organic resin film,wherein a surface of the second organic resin film in the contact hole has a rising portion higher than a surface of the first portion,wherein the second organic resin film does not contact the third organic resin film,wherein the third organic resin film has a portion contacting the first organic resin film,wherein the first organic resin film located in a pixel portion is not exposed in the ninth step. 77. The self-light-emitting device according to claim 75, wherein the third insulating film comprises a material selected from acrylic resin, polyimide, and polyamide. 78. The method of manufacturing a self-light-emitting device according to claim 76, wherein the film comprises a material selected from acrylic resin, polyimide, orand polyamide. 79. The self-light-emitting device according to claim 75, wherein the fourth insulating film comprises a material selected from acrylic resin, polyimide, and polyamide. 80. The method of manufacturing a self-light-emitting device according to claim 76, wherein the second organic resin film comprises a material selected from acrylic resin, polyimide, and polyamide. 81. The self-light-emitting device according to claim 75, wherein the fifth insulating film is formed in the pixel portion. 82. The method of manufacturing a self-light-emitting device according to claim 76, wherein the third organic resin film is formed in the pixel portion. 83. The self-light-emitting device according to claim 75, wherein the fifth insulating film comprises a material selected from acrylic resin, polyimide, and polyamide. 84. The method of manufacturing a self-light-emitting device according to claim 76, wherein the third organic resin film comprises a material selected from acrylic resin, polyimide, and polyamide.