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The present invention relates to cost effective production methods of high efficiency silicon based back-contacted back-junction solar panels and solar panels thereof having a multiplicity of alternating rectangular emitter- and base regions on the back-side of each cell, each with rectangular metal

The present invention relates to cost effective production methods of high efficiency silicon based back-contacted back-junction solar panels and solar panels thereof having a multiplicity of alternating rectangular emitter- and base regions on the back-side of each cell, each with rectangular metallic electric finger conductor above and running in parallel with the corresponding emitter- and base region, a first insulation layer in-between the wafer and finger conductors, and a second insulation layer in between the finger conductors and cell interconnections.

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1. A method for manufacturing a back-contacted back-junction silicon solar cell module, wherein the method comprises the following process steps in successive order:employing a multiplicity of semi-finished solar cells, each comprising a crystalline silicon thin wafer having a layered stratified dop

1. A method for manufacturing a back-contacted back-junction silicon solar cell module, wherein the method comprises the following process steps in successive order:employing a multiplicity of semi-finished solar cells, each comprising a crystalline silicon thin wafer having a layered stratified doped structure at least containing a back-side emitter layer and a base layer below the emitter layer,laminating the multiplicity of semi-finished solar cells to a module front substrate with their front-side facing the module front substrate in a tessellated-resembling pattern,forming a multiplicity of alternating rectangular emitter- and base regions on the backside of each cell of the multiplicity of semi-finished solar cells by locally removing equidistant parallel rectangular sections of the emitter layer from one side to the opposite side of each cell to expose the underlying base layer,depositing a continuous amorphous silicon layer onto the back-side of the multiplicity of alternating rectangular emitter- and base regions of the multiplicity of semi-finished solar cells which at least covers the back-side of the cells in the laminated multiplicity of semi-finished solar cells,forming a first insulation layer onto the continuous amorphous silicon layer with linear openings defining electric contact access areas running in parallel above each of the linear emitter- and base regions of the interdigitated multiplicity of each cell in the laminated multiplicity of semifinished solar cells,forming a rectangular metallic electric finger conductor parallel with and more or less directly above each emitter- and base region of each cell of the laminated multiplicity of the semi-finished solar cells,forming a second insulation layer onto the finger conductors with a set of access openings at positions where electric contact with the underlying finger conductor is intended,forming a via contact in each access opening in the second insulation layer in electric contact with the finger conductor lying below the access opening,electrically interconnecting the finger conductors of the solar module by forming a set of ribbons where each ribbon is made to be in electric contact with an intended selection of via contacts in the second insulation layer, andlaminating a back-side cover substrate onto the back-side of the module front substrate including the multiplicity of solar cells. 2. A method according to claim 1, wherein the multiplicity of semi-finished solar cells are laminated onto the module front substrate by depositing them in the intended tessellated-resembling pattern onto a lamination board with their back-surfaces facing down onto the lamination board, followed by pressing the module front glass which has a less than 1 mm thick layer of ethylene-vinyl acetate (EVA) facing the semi-finished solar cells and heating the assembly to about 175° C. until the EVA is cured. 3. A method according to claim 2, wherein the continuous amorphous silicon layer is formed by: first out-gassing the EVA by one of the following steps: heating the solar module to 175° C. in air for about 10 minutes,heating the solar module to 175° C. in vacuum for about 10 minutes, orheating the solar module to 175° C. in vacuum for about 10 minutes, then immersing the module in a hydrofluoric acid solution (2.5% concentration) for 60 seconds followed by rinsing in de-ionized water, and drying the solar module, and then loading the module into the amorphous silicon deposition chamber for immediate deposition of a-Si by chemical vapour deposition (CVD). 4. A method according to claim 3 wherein a layer of SiNx is deposited onto the continuous amorphous silicon layer by chemical vapour deposition. 5. A method according to claim 1, wherein the first insulation layers is made by screen printing a polyimide composition to form a patterned layer of thickness of 1-10 μm having linear contact areas with a width in the range from 50-200 μm running in parallel and aligned above the centre of each P- and N-type region of the multiplicity of alternating rectangular emitter- and base regions of each solar cell in the module and then cured at 180-200° C. 6. A method according to claim 1, wherein the contact access area are cleaned by plasma ashing in O2/N2O, and a hydrofluoric etching after formation of the first insulation layer. 7. A method according to claim 1, wherein the finger conductors are made by: DC magnetron sputtering in a multi-chamber tool an Al-layer as a semiconductor contact layer, followed by a layer of Ni0.8Cr0.2, and then a layer of Cu using planar targets and Ar as a sputtering gas, patterning the metal layers by laser ablation forming linear grooves in the metal layer, and then heating the solar module up to a temperature of about 250° C. 8. A method according to claim 1, wherein the second insulation layer is made by one of: applying a patterned adhesive or a printable insulating ink onto the metallic phase (finger conductors), depositing an un-patterned continuous second insulation layer, and using the subsequent patterned print of conductive material to selectively etch through, penetrate, melt or dissolve the second insulation layer in selected regions, having the conductive layer acting as a shadow mask to prevent UV curing of the underlying insulator, thus allowing the conductor to penetrate the insulator in the selected areas, or printing the via conductor pads directly onto the cell metallization, and then flowing a self-levelling insulator layer around the conductor pads to form the second insulating layer by UV curing. 9. A method according to claim 1, wherein the ribbons is formed by applying a suitable length of metal strip or band from a spool, stretch and cut the metal strip or band to size, form a strain relief feature and then place the metal strip or band over the second insulating layer with the correct orientation, and then pressing the metal strip or band into the conductive adhesive or solder paste in the access openings. 10. A back-contacted back-junction silicon solar cell module, comprising: a multiplicity of M=k·l solar cells laminated to a module front substrate in rectangular a tessellated-resembling pattern of k rows and l columns with their front-side facing the module front substrate, where each solar cell comprises: a crystalline silicon wafer having a layered stratified doped structure at least consisting of a back-side emitter layer and a base layer below the emitter layer, andan interdigitated multiplicity of alternating rectangular emitter- and base regions on the back-side, a surface passivation in the form of a continuous amorphous silicon layer deposited directly onto the back-side of the silicon wafers of the laminated multiplicity of solar cells, a first insulation layer deposited onto the continuous amorphous silicon layer having a set of openings defining linear electric contact access areas running in parallel with and located more or less directly above the centre-axis of each of the rectangular emitter- and base regions of the interdigitated multiplicity of the solar cells of the module, a metallic rectangular finger conductor deposited onto the first insulation layer above each emitter- and base region of the interdigitated multiplicity of alternating rectangular emitter- and base regions on the back-side of the multiplicity of M=k·l solar cells, where each rectangular finger conductor is running in parallel with and is electrically connected to, via the linear electric contact access area, the underlying emitter- or base region, a second insulation layer deposited onto the finger conductors having a set of access openings containing a via contact in electric contact with the underlying finger conductor, a set of ribbon contacts on top of the second insulation layer for interconnection of the finger conductors, and a back-side cover substrate laminated onto the back-side of the module front such that the multiplicity of solar cells including the deposited layers are sandwiched and encapsulated by the lamination adhesive between the module front and back substrate. 11. A solar cell module according to claim 10, wherein the crystalline silicon wafers have one of the following geometries: squares, pseudo-squares, rectangles, or pseudo-rectangles, where “pseudo” refers to rounded corners, chamfered corners, or angled corners, with a length l and width w in the range from 50 to 400 mm, and where the wafers have three stratified layers of doped silicon, where: the back-side emitter layer of the crystalline silicon thin wafer has thickness from 0.2-5 μm and is doped to a concentration from 1·1016-1·1020 cm−3 of either an N-type or P-type doping element,the intermediate base layer of the crystalline silicon thin wafer has thickness from 10 to 65 μm and is doped to a concentration from 1·1015 to 1·1017 cm−3 of an doping element of the opposite conductivity of the emitter layer, andthe front surface field layer of the crystalline silicon thin wafer has thickness from 0.2 to 5 μm and is doped to a concentration from 1·1016 to 1·1020 cm−3 of either P-type or N-type doping element. 12. A solar cell module according to claim 11, wherein: the length l and width w of the crystalline silicon thin wafers are in the range from 125 to 300 mm, the emitter layer has a thickness in one of the following ranges; from 0.3-3 μm, from 0.3-2 μm, or from 0.4-1 μm, and is doped with either phosphorous or boron atoms to a concentration in one of the following ranges; from 1·1017 to 1·1020 cm−3, from 1·1018-5·1019 cm−3, or from 1·1019-5·1019, the base layer has a thickness in one of the following ranges; from 20 to 50 μm, or from 30 to 40 μm, and is doped, with boron atoms if the emitter layer is doped with phosphorous atoms or phosphorous atoms if the emitter layer is doped with boron atoms, to a concentration in one of the following ranges; from 5·1015 to 5·1016 cm−3, or from 1·1016 to 5·1016, and the front surface field layer has a thickness in one of the following ranges; from 1-10 μm, from 1-5 μm, or from 1-3 μm, and is doped with either phosphorous or boron atoms to a concentration in one of the following ranges; from 5·1017 to 5·1019 cm3, or from 1·1018-1·1019 cm3. 13. A solar cell module according to claim 11, wherein: the length l and width w of the crystalline silicon thin wafers are 125 mm, the emitter layer has a thickness of 0.8 μm, and is doped with phosphorous atoms to a concentration of 1·1019 cm−3, the base layer has a thickness of 40 μm, and is doped with boron atoms to a concentration of 3·1016 cm−3, and the front surface field layer has a thickness of 1.5 μm, and is doped with boron atoms to a concentration of 5·1017 cm−3. 14. A solar cell module according to claim 10, wherein the distance between two adjacent emitter regions or two adjacent base regions of the interdigitated multiplicity of alternating rectangular emitter- and base regions is in one of the following ranges; from 0.1 to 5 mm, from 0.2 to 4 mm, from 0.3 to 3 mm, or 0.5 to 2 mm. 15. A solar cell module according to claim 10, wherein the surface passivation consists of the continuous amorphous silicon layer and a second SiNx-layer deposited onto the first insulation layer except at the linear electric contact access areas. 16. A solar cell module according to claim 10, wherein: the first insulation layer has a thickness in the range from 1 to 10 μm of a polymer having a resistivity of at least 1016 ρ(Ω·m), and where the linear electric access area of each emitter- and base region extends across the entire length or width of the solar cell in the form of a linear through-going groove or slit in the first insulation layer, is located more or less directly above the longitudinal centre axis of the corresponding emitter- or base region, and the linear electric access area has a width in the range from 50-200 μm. 17. A solar cell module according to claim 10, wherein: the rectangular electric finger conductor above each of the linear electric contact access areas is made from a metallic phase with a thickness in one of the following ranges; from 200 nm to 20 μm, from 200 nm to 10 μm, from 300 nm to 5 μm, from 300 nm to 2 μm, from 350 nm to 1 μm, or from 350 nm to 800 nm, is patterned to define one finger conductor above each base- or emitter region which extends across the entire length or width of the solar cell, and is located more or less directly above the longitudinal centre axis of the corresponding emitter- or base region, and has a distance between two adjacent emitter regions or two adjacent base regions in one of the following ranges; from 0.1 to 5 mm, from 0.2 to 4 mm, from 0.3 to 3 mm, or 0.5 to 2 mm. 18. A solar cell module according to claim 17, wherein the metallic phase is a metal stack with one of the following compositions; Al/NiCr/Cu, Al/NiCr/SnCu, AlSi/NiV/SnCu, or 300 nm thick layer of A1 followed by 50 nm thick layer of Ni0.8Cr0.2 and 50 nm thick layer of Cu, where the A1 or Al-containing alloy is the adhesion layer in contact with the continuous amorphous silicon layer. 19. A solar cell module according to claim 17, wherein the metal stack also contains an upper contact layer on the opposite side of the adhesion contact layer chosen among on of the following; Cu, Sn and Ag containing alloys; a Cu—Sn—Ag containing alloy; a Cu—Sn alloy; Sn; or noble metals such as Au, Ag or Pd. 20. A solar cell module according to claim 10, wherein the second insulation layer is a polyimide layer of thickness in the range of 1-10 μm, and each solar cell of the module has a set of access openings with cross-section in a parallel plane of the second insulation layer of 2*2 μm2 filled with an electrically conductive solder paste in electric contact with at least some of the underlying finger conductors. 21. A solar cell module according to claim 20, wherein the access openings of each solar cell of the multiplicity of M=k·l solar cells of solar module are located such that they define a rectangular pattern of n columns and m rows for each solar cell, where each column is a linear set of m access points above one of either an emitter- or base type finger conductor of the solar cell, and each row defines a linear set of n access points for ribbons oriented perpendicularly in relation to the finger conductors, and where for every odd numbered solar cell of every row of the multiplicity of M=k·l solar cells of the solar module, the rectangular pattern of m·n access points is made such that each access point in: every odd numbered row in the set of m rows is made to contact the finger conductor in electric contact with the emitter type regions of the solar cell, andevery even numbered row in the set of m rows is made to contact the finger conductor in electric contact with the base type regions of the solar cell, and for every even numbered solar cell of every row of the multiplicity of M=k·l solar cells of the solar module, the rectangular pattern of m·n access points is made such that each access point in: every odd numbered row in the set of m rows is made to contact the finger conductor in electric contact with the base type regions of the solar cell, andevery even numbered row in the set of m rows is made to contact the finger conductor in electric contact with the emitter type regions of the solar cell. 22. A solar cell module according to claim 21, wherein the ribbons are made of a metal strip with a constant cross-section made of solid copper core coated with pure Sn of thickness in one of the following ranges; from 10 to 300 μm, from 20 to 200 μm, from 30 to 100 μm, from 30 to 60 μm, or from 35 to 50 μm, and width in one of the following ranges; from 0.1 to 20 mm, from 0.3 to 15 mm, from 0.5 to 10 mm, from 1 to 8 mm, or from 3 to 6 mm, and where each ribbon is oriented and located such that is parallel and aligned with either an even or an odd numbered row of the rectangular pattern of m·n access points of the solar cells, and is spanning across two solar cells in the same row of the multiplicity of M=k·l solar cells of the solar module such that: ribbons aligned with an odd numbered row of the rectangular pattern of m·n access points of an odd numbered solar cell will connect the emitter type regions of this solar cell with the base type regions of the next solar cell in the row, andribbons aligned with an even numbered row of the rectangular pattern of m·n access points of an odd numbered solar cell will connect the emitter type regions of this solar cell with the base type regions of the previous solar cell in the row, and if the solar cell is the first solar cell in the row, the ribbons aligned with even numbered rows do only span across this solar cell, and if the solar cell is the last cell in the row, the ribbons aligned with odd numbered rows do only span across this solar cell.