There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructur
There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.
대표청구항▼
1. A semiconductor light emitting device comprising: a first conductivity-type semiconductor base layer; anda plurality of light emitting nanostructures disposed spaced apart from one another on the first conductivity-type semiconductor base layer and including a first conductivity-type semiconducto
1. A semiconductor light emitting device comprising: a first conductivity-type semiconductor base layer; anda plurality of light emitting nanostructures disposed spaced apart from one another on the first conductivity-type semiconductor base layer and including a first conductivity-type semiconductor core, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively,wherein the electric charge blocking layer has different thicknesses and impurity concentrations on first and second crystal planes of the first conductivity-type semiconductor core and includes an impurity having a first concentration, the second conductivity-type semiconductor layer includes the impurity having a second concentration, and the first concentration is half or less of the second concentration, wherein a thickness of the electric charge blocking layer is less than a thickness of the second conductivity-type semiconductor layer, and wherein the first conductivity-type semiconductor core is in direct contact with an active layer. 2. The semiconductor light emitting device of claim 1, wherein the first concentration comprises an impurity concentration in a region of at least one of a first or a second crystal plane of the electric charge blocking layer. 3. The semiconductor light emitting device of claim 1, wherein the electric charge blocking layer has an impurity concentration greater in a region on the first crystal planes than in a region on the second crystal planes. 4. The semiconductor light emitting device of claim 1, wherein the electric charge blocking layer has a thickness ranging from approximately 20 nm to 50 nm on the first crystal planes. 5. The semiconductor light emitting device of claim 1, wherein the electric charge blocking layer has a thickness greater on the first crystal planes than on the second crystal planes. 6. The semiconductor light emitting device of claim 1, wherein the impurity comprises a p-type impurity. 7. The semiconductor light emitting device of claim 6, wherein the impurity comprises magnesium (Mg). 8. The semiconductor light emitting device of claim 1, wherein the electric charge blocking layer includes AlGaN or AlInGaN. 9. The semiconductor light emitting device of claim 1, wherein the first crystal planes comprise non-polar planes, and the second crystal planes comprise polar planes or semi-polar planes. 10. The semiconductor light emitting device of claim 9, wherein the first crystal planes comprise m planes and the second crystal planes comprise r planes. 11. The semiconductor light emitting device of claim 1, wherein the plurality of light emitting nanostructures further include a transparent electrode layer positioned on the second conductivity-type semiconductor layer. 12. A semiconductor light emitting device comprising: a first conductivity-type semiconductor base layer; anda plurality of light emitting nanostructures disposed spaced apart from one another on the first conductivity-type semiconductor base layer and including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively,wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions, andwherein the electric charge blocking layer has different thicknesses and impurity concentrations on the first and second crystal planes, anda thickness of the electric charge blocking layer is less than a thickness of the second conductivity-type semiconductor layer. 13. The semiconductor light emitting device of claim 12, wherein the electric charge blocking layer includes an impurity having a first concentration, the second conductivity-type semiconductor layer has the impurity having a second concentration, and the first concentration is half or less of the second concentration, and wherein the first conductivity-type semiconductor core is in direct contact with the active layer. 14. The semiconductor light emitting device of claim 13, wherein the impurity comprises magnesium (Mg).
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same.
Kim, YuSik, Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system.
Han, Seong Yeon; Lee, Seon Goo; Song, Chang Ho; Park, Jung Kyu; Park, Young Sam; Han, Kyung Taeg, Light emitting diode package with diffuser and method of manufacturing the same.
Kim, Yu-Sik, Light-emitting element capable of increasing amount of light emitted, light-emitting device including the same, and method of manufacturing light-emitting element and light-emitting device.
Okuyama,Hiroyuki; Biwa,Goshi; Suzuki,Jun, Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Tatsuya Shimoda JP; Satoshi Inoue JP; Wakao Miyazawa JP, Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method.
Yoo, Chul Hee; Jeong, Young June; Park, Young Sam; Han, Seong Yeon; Kim, Ho Yeon; Hahm, Hun Joo; Kim, Hyung Suk, White light emitting device and white light source module using the same.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.