초록 ▼

One embodiment according to the present invention is an imaging apparatus including a pixel. The pixel includes first and second photoelectric conversion units, a floating diffusion portion, and first and second transfer transistors. The first and second transfer transistors are configured to transf

One embodiment according to the present invention is an imaging apparatus including a pixel. The pixel includes first and second photoelectric conversion units, a floating diffusion portion, and first and second transfer transistors. The first and second transfer transistors are configured to transfer electric carriers generated respectively at the first and second photoelectric conversion units to the floating diffusion portion. The imaging apparatus includes a first conductive member electrically connected to the gate electrode of the first transfer transistor, a second conductive member electrically connected to the gate electrode of the second transfer transistor, and a control unit. The distance of closest proximity between the first conductive member and the floating diffusion portion is longer than the distance of closest proximity between the second conductive member and the floating diffusion portion.

대표청구항 ▼

1. An imaging apparatus comprising: a pixel including at least a first photoelectric conversion unit, a second photoelectric conversion unit, a floating diffusion portion, a first transfer transistor configured to transfer an electric carrier generated at the first photoelectric conversion unit to t

1. An imaging apparatus comprising: a pixel including at least a first photoelectric conversion unit, a second photoelectric conversion unit, a floating diffusion portion, a first transfer transistor configured to transfer an electric carrier generated at the first photoelectric conversion unit to the floating diffusion portion, and a second transfer transistor configured to transfer an electric carrier generated at the second photoelectric conversion unit to the floating diffusion portion;a first conductive member electrically connected to a gate electrode of the first transfer transistor;a second conductive member electrically connected to a gate electrode of the second transfer transistor; anda control unit electrically connected to the first transfer transistor and the second transfer transistor via the first conductive member and the second conductive member respectively;wherein a distance of closest proximity between the first conductive member and the floating diffusion portion is longer than a distance of closest proximity between the second conductive member and the floating diffusion portion; andwherein the control unit is configured to perform:a first control operation for setting from a state in which both of the first transfer transistor and the second transfer transistor are off, a state where the first transistor is on while keeping the second transfer transistor off, anda second control operation for setting a state in which both of the first transfer transistor and the second transfer transistor are on while the electric carrier transferred by the first control operation is held at the floating diffusion portion. 2. The imaging apparatus according to claim 1, wherein the floating diffusion portion includes a semiconductor region disposed in a semiconductor substrate and configured to hold a transferred electric carrier, anda third conductive member electrically connected to the semiconductor region. 3. The imaging apparatus according to claim 2, wherein the semiconductor region includes a first semiconductor region disposed correspondingly to the first photoelectric conversion unit, anda second semiconductor region disposed correspondingly to the second photoelectric conversion unit; andwherein the third conductive member electrically connects the first semiconductor region and the second semiconductor region mutually. 4. The imaging apparatus according to claim 3, wherein the first photoelectric conversion unit, the gate electrode of the first transfer transistor, and the first semiconductor region are arrayed in a first direction;wherein the second photoelectric conversion unit, the gate electrode of the second transfer transistor, and the second semiconductor region are arrayed in the first direction; andwherein each of the first conductive member and the second conductive member extends in a second direction intersecting the first direction. 5. The imaging apparatus according to claim 3, wherein the first photoelectric conversion unit, the gate electrode of the first transfer transistor, and the first semiconductor region are arrayed in a first direction;wherein the second photoelectric conversion unit, the gate electrode of the second transfer transistor, and the second semiconductor region are arrayed in the first direction; andwherein each of the first conductive member and the second conductive member extends in a direction parallel to the first direction. 6. The imaging apparatus according to claim 2, wherein at least a part of an orthogonal projection of the second conductive member onto a plane parallel to a surface of the first photoelectric conversion unit is positioned in a region between an orthogonal projection of the first conductive member onto the plane, and an orthogonal projection of the semiconductor region included in the floating diffusion portion onto the plane. 7. The imaging apparatus according to claim 1, wherein at least a part of an orthogonal projection of the gate electrode of the first transfer transistor onto a plane parallel to a surface of the first photoelectric conversion unit is superimposed on each of an orthogonal projection of the second conductive member onto the plane, and an orthogonal projection of the first conductive member onto the plane; andwherein at least a part of an orthogonal projection of the gate electrode of the second transfer transistor onto the plane is superimposed on each of the orthogonal projection of the second conductive member, and the orthogonal projection of the first conductive member. 8. The imaging apparatus according to claim 1, wherein the control unit is configured, between the first control operation and the second control operation, to set a state in which the first transfer transistor and the second transfer transistor are off. 9. The imaging apparatus according to claim 1, the pixels further including: an amplifying portion configured to output a signal based on an electric carrier of the floating diffusion portion,wherein the amplifying portion is configured to output a first signal based on an electric carrier generated at the first photoelectric conversion unit during a period from a start of the first control operation to a start of the second control operation, and to output, after the second control operation is started, a second signal based on an electric carrier added at the floating diffusion portion. 10. The imaging apparatus according to claim 1, wherein a capacitive coupling between the first conductive member and the floating diffusion portion is less than a capacitive coupling between the second conductive member and the floating diffusion portion. 11. The imaging apparatus according to claim 1, wherein a change in a potential of the floating diffusion portion caused by a change in a potential of the first conductive member is smaller than a change in the potential of the floating diffusion portion caused by a corresponding change in a potential of the second conductive member. 12. The imaging apparatus according to claim 1, further comprising: a fourth conductive member disposed between at least a part of the first conductive member and the floating diffusion portion. 13. The imaging apparatus according to claim 1, wherein a material of the gate electrode differs from a material of the first conductive member and the second conductive member. 14. The imaging apparatus according to claim 1, wherein the first conductive member and the second conductive member are electrically connected respectively to the gate electrode of the first transfer transistor and the gate electrode of the second transfer transistor via contact plugs. 15. An imaging apparatus comprising: a pixel including at least a first photoelectric conversion unit, a second photoelectric conversion unit, a floating diffusion portion, a first transfer transistor configured to transfer an electric carrier generated at the first photoelectric conversion unit to the floating diffusion portion, and a second transfer transistor configured to transfer an electric carrier generated at the second photoelectric conversion unit to the floating diffusion portion;a first conductive member electrically connected to a gate electrode of the first transfer transistor;a second conductive member electrically connected to a gate electrode of the second transfer transistor; anda control unit electrically connected to the first transfer transistor and the second transfer transistor via the first conductive member and the second conductive member respectively;wherein the first conductive member and the second conductive member are disposed in a same wiring layer;wherein, in a plane parallel to a surface of the first photoelectric conversion unit, at least a part of an orthogonal projection of the second conductive member onto the plane is positioned in a region between an orthogonal projection of the first conductive member onto the plane, and an orthogonal projection of the floating diffusion portion onto the plane; andwherein the control unit is configured to perform:a first control operation for setting from a state in which both of the first transfer transistor and the second transfer transistor are off, a state where the first transistor is on, while keeping the second transfer transistor off, anda second control operation for setting a state in which both the first transfer transistor and the second transfer transistor are on while the electric carrier transferred by the first control operation is held at the floating diffusion portion. 16. The imaging apparatus according to claim 15, wherein the floating diffusion portion includes a semiconductor region; andwherein at least the part of the orthogonal projection of the second conductive member is positioned in a region between the orthogonal projection of the first conductive member and an orthogonal projection of the semiconductor region included in the floating diffusion portion onto the plane. 17. An imaging apparatus comprising: a pixel including at least a first photoelectric conversion unit, a second photoelectric conversion unit, a floating diffusion portion, a first transfer transistor configured to transfer an electric carrier generated at the first photoelectric conversion unit to the floating diffusion portion, and a second transfer transistor configured to transfer an electric carrier generated at the second photoelectric conversion unit to the floating diffusion portion;a first conductive member electrically connected to a gate electrode of the first transfer transistor;a second conductive member electrically connected to a gate electrode of the second transfer transistor; anda control unit electrically connected to the first transfer transistor and the second transfer transistor via the first conductive member and the second conductive member respectively;wherein the first conductive member and the second conductive member are disposed in a same wiring layer;wherein the floating diffusion portion includes a third conductive member disposed in the wiring layer;wherein at least a part of the second conductive member is positioned between the first conductive member and the third conductive member included in the floating diffusion portion; andwherein the control unit is configured to perform:a first control operation for setting from a state in which both of the first transfer transistor and the second transfer transistor are off, a state where the first transistor is on, while keeping the second transfer transistor off, anda second control operation for setting a state in which both of the first transfer transistor and the second transfer transistor are on while the electric carrier transferred by the first control operation is held at the floating diffusion portion. 18. An imaging apparatus comprising: a pixel including at least a first photoelectric conversion unit, a second photoelectric conversion unit, a floating diffusion portion, a first transfer transistor configured to transfer an electric carrier generated at the first photoelectric conversion unit to the floating diffusion portion, and a second transfer transistor configured to transfer an electric carrier generated at the second photoelectric conversion unit to the floating diffusion portion;a first conductive member electrically connected to a gate electrode of the first transfer transistor;a second conductive member electrically connected to a gate electrode of the second transfer transistor; anda control unit electrically connected to the first transfer transistor and the second transfer transistor via the first conductive member and the second conductive member respectively;wherein a change in a potential of the floating diffusion portion caused by a change in a potential of the first conductive member is smaller than a change in the potential of the floating diffusion portion caused by a corresponding change in a potential of the second conductive member; andwherein the control unit is configured to perform:a first control operation for setting from a state in which both of the first transfer transistor and the second transfer transistor are off, a state where the first transistor is on, while keeping the second transfer transistor off, anda second control operation for setting a state in which both of the first transfer transistor and the second transfer transistor are on while the electric carrier transferred by the first control operation is held at the floating diffusion portion. 19. An imaging apparatus comprising: a pixel including at least a first photoelectric conversion unit, a second photoelectric conversion unit, a floating diffusion portion, a first transfer transistor configured to transfer an electric carrier generated at the first photoelectric conversion unit to the floating diffusion portion, and a second transfer transistor configured to transfer an electric carrier generated at the second photoelectric conversion unit to the floating diffusion portion;a first conductive member electrically connected to a gate electrode of the first transfer transistor;a second conductive member electrically connected to a gate electrode of the second transfer transistor; anda control unit electrically connected to the first transfer transistor and the second transfer transistor via the first conductive member and the second conductive member respectively;wherein a capacitive coupling between the first conductive member and the floating diffusion portion is less than a capacitive coupling between the second conductive member and the floating diffusion portion; andwherein the control unit is configured to perform:a first control operation for setting, from a state in which both of the first transfer transistor and the second transfer transistor are off, a state where the first transistor is on, while keeping the second transfer transistor off, anda second control operation for setting a state in which both of the first transfer transistor and the second transfer transistor are on while the electric carrier transferred by the first control operation is held at the floating diffusion portion. 20. An imaging apparatus comprising: a pixel including at least a first photoelectric conversion unit, a second photoelectric conversion unit, a floating diffusion portion, a first transfer transistor configured to transfer an electric carrier generated at the first photoelectric conversion unit to the floating diffusion portion, and a second transfer transistor configured to transfer an electric carrier generated at the second photoelectric conversion unit to the floating diffusion portion;a lens disposed corresponding to the pixel;a first conductive member electrically connected to a gate electrode of the first transfer transistor; anda second conductive member electrically connected to a gate electrode of the second transfer transistor;wherein the first photoelectric conversion unit and the second photoelectric conversion unit are disposed so as to receive light passing through mutually different positions of a pupil of the lens, thereby outputting a signal for focus detection from the first photoelectric conversion unit; andwherein a distance of closest proximity between the first conductive member and the floating diffusion portion is longer than a distance of closest proximity between the second conductive member and the floating diffusion portion. 21. An imaging system comprising: the imaging apparatus according to claim 1; anda signal processing device configured to process a signal from the imaging apparatus;wherein the signal processing device is configured to process a signal based on an electric carrier generated at the first photoelectric conversion unit output from the imaging apparatus, and a signal based on an electric carrier generated at the second photoelectric conversion unit, and acquires distance information from the imaging apparatus to an object.