Method of manufacturing semiconductor light emitting device
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-033/00
H01L-021/78
H01L-021/762
출원번호
US-0490438
(2014-09-18)
등록번호
US-9318647
(2016-04-19)
우선권정보
KR-10-2014-0007116 (2014-01-21)
발명자
/ 주소
Kim, Bum Joon
Choi, Seung Woo
Kim, Sung Tae
Park, Young Min
Sim, Eun Deok
Lee, Sung Pyo
출원인 / 주소
SAMSUNG ELECTRONICS CO., LTD.
대리인 / 주소
McDermott Will & Emery LLP
인용정보
피인용 횟수 :
1인용 특허 :
43
초록▼
A method of manufacturing a semiconductor light emitting device includes forming a light emitting structure layer including an active layer on a first substrate. A second substrate is bonded to the light emitting structure layer at a first temperature higher than room temperature. The first substrat
A method of manufacturing a semiconductor light emitting device includes forming a light emitting structure layer including an active layer on a first substrate. A second substrate is bonded to the light emitting structure layer at a first temperature higher than room temperature. The first substrate is removed from the light emitting structure layer at a second temperature higher than room temperature. The second substrate and the light emitting structure are cooled to reach room temperature. A coefficient of thermal expansion of the second substrate is different from a coefficient of thermal expansion of the active layer.
대표청구항▼
1. A method of manufacturing a semiconductor light emitting device, the method comprising: forming a light emitting structure layer including an active layer on a first substrate;bonding the second substrate to the light emitting structure layer at a first temperature higher than room temperature;re
1. A method of manufacturing a semiconductor light emitting device, the method comprising: forming a light emitting structure layer including an active layer on a first substrate;bonding the second substrate to the light emitting structure layer at a first temperature higher than room temperature;removing the first substrate from the light emitting structure layer at a second temperature higher than room temperature; andcooling the second substrate and the light emitting structure to reach room temperature,wherein the active layer has a compressive stress induced thereto after the forming of the light emitting structure layer, and the second substrate has a coefficient of thermal expansion lower than a coefficient of thermal expansion of the active layer to induce tensile stress in the active layer during the cooling of the second substrate. 2. The method of claim 1, wherein the second substrate is any one material selected from the group consisting of Si, SiC, AlN, GaP, InP, and graphite. 3. The method of claim 1, wherein the first substrate is a sapphire substrate, and the light emitting structure layer including the active layer includes a Group III-V nitride semiconductive material. 4. The method of claim 1, wherein the second temperature is lower than or equal to the first temperature. 5. The method of claim 1, wherein a difference in coefficients of thermal expansion between the active layer and the second substrate is within a range of 0.5×10-6/K to 3.0×10-6/K. 6. The method of claim 1, wherein the bonding of the second substrate to the light emitting structure layer is performed by eutectic bonding of a bonding metal. 7. The method of claim 5, wherein the bonding metal is a gold alloy having a eutectic temperature of 200° C. or higher. 8. The method of claim 1, wherein the removing of the first substrate is performed by laser lift-off (LLO). 9. The method of claim 1, wherein a thickness of the second substrate is greater than a thickness of the light emitting structure layer. 10. The method of claim 1, wherein the light emitting structure layer further includes a reflective metal layer disposed on a surface thereof in contact with the second substrate. 11. The method of claim 1, further comprising forming an electrode on a surface of the light emitting structure layer from which the first substrate has been removed. 12. The method of claim 1, further comprising forming a conductive via penetrating through the second semiconductor layer and the active layer before bonding the second substrate; andforming an electrode on an upper surface of the second semiconductor layer after cooling the second substrate and the light emitting structure. 13. A method of manufacturing a semiconductor light emitting device package, the method comprising: manufacturing a semiconductor light emitting device according to the method of claim 1;mounting the semiconductor light emitting device on one of a pair of lead frames, andelectrically connecting the semiconductor light emitting device to the other of the lead frames through a wire and to the one of the lead frames through the second substrate of the semiconductor light emitting device. 14. A method of manufacturing a semiconductor light emitting device package, the method comprising: manufacturing a semiconductor light emitting device according to the method of claim 1;mounting the semiconductor light emitting device on a first portion of a mounting board; andelectrically connecting the semiconductor light emitting device to a second portion of the mounting board separated from the first portion through a wire, and to the first portion of the mounting board through the second substrate of the semiconductor light emitting device. 15. A method of manufacturing a semiconductor light emitting device, the method comprising: forming a light emitting structure layer including an active layer on a first substrate;bonding the second substrate to the light emitting structure layer at a first temperature higher than room temperature;removing the first substrate from the light emitting structure layer at a second temperature higher than room temperature; andcooling the second substrate and the light emitting structure to reach room temperature,wherein the active layer has a tensile stress induced thereto after the forming of the light emitting structure layer, and the second substrate has a coefficient of thermal expansion greater than a coefficient of thermal expansion of the active layer to induce compressive stress in the active layer during the cooling of the second substrate. 16. A method of manufacturing a semiconductor light emitting device, the method comprising: forming, on a first substrate, a light emitting structure layer to include an active layer;determining whether compressive or tensile stress is induced in the active layer;selectively forming, based on a result of the determination, a second substrate to have a material having a coefficient of thermal expansion lower than a coefficient of thermal expansion of the active layer or to have a material having a coefficient of thermal expansion greater than the coefficient of thermal expansion of the active layer;bonding the second substrate to the light emitting structure layer at a first temperature higher than room temperature,removing the first substrate from the light emitting structure layer at a second temperature higher than room temperature;cooling the second substrate and the light emitting structure to reach room temperature,wherein the second substrate is formed to have a material having a coefficient of thermal expansion lower than the coefficient of thermal expansion of the active layer, when it is determined that compressive stress is induced in the active layer.
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