[특허]Sintered refractory material based on silicon carbide with a silicon nitride binder

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특허 상세정보

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Sintered refractory material based on silicon carbide with a silicon nitride binder

특허상세정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C04B-035/565 C04B-035/626 C04B-038/00 C25C-003/08 F27B-003/08 F27B-003/20 F27D-001/00 C04B-111/00
출원번호	US-0866603 (2009-02-05)
등록번호	US-9321690 (2016-04-26)
국제출원번호	PCT/IB2009/050480 (2009-02-05)
§371/§102 date	20100927 (20100927)
국제공개번호	WO2009/098657 (2009-08-13)
발명자 / 주소	Jorge, Eric Marguin, Olivier Moitrier, Lionel Citti, Olivier
출원인 / 주소	SAINT-GOBAIN CENTRE DE RECHERCHES ET D'ETUDES EUROPEEN
대리인 / 주소	Oliff PLC
인용정보	피인용 횟수 : 0 인용 특허 : 9

초록

A sintered material based on silicon carbide (SiC) reactively sintered between 1,100° C. and 1,700° C. to form a silicon nitride binder (Si3N4), intended in particular for fabricating an aluminum electrolysis cell, including 0.05% to 1.5% of boron, the Si3N4/SiC weight ratio being in the range 0.05 to 0.45. Application, in particular, to an electrolysis cell.

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1. A method comprising: (A) providing a refractory shaped product based on silicon carbide (SiC) and reactively sintered between 1,100° C. and 1,700° C. to form a silicon nitride binder Si3N4, including 0.05% to 1.5% of boron as a percentage by weight, the Si3N4/SiC weight ratio being in the range of 0.05 to 0.45; andperforming in oxidizing conditions a step (B) selected from the group consisting of:(i) submitting at least one device selected from the group consisting of kiln furniture and other firing supports to a temperature that reaches 1750° C. and to cycling variations of temperature, each of the cycles lasting less than 24 hours and the temperature varying by at least 1000° C. in any of the cycles;(ii) submitting at least one device selected from the group consisting of a block and a tube of a muffle to a temperature that reaches 1500° C.;(iii) submitting at least one device selected from the group consisting of a block, a tile and a tube of a domestic incineration furnace to a temperature that reaches 1300° C.;(iv) submitting at least one device selected from the group consisting of a block, a tile and a tube of a furnace of a glass making factory to a temperature that reaches 1500° C.;(v) submitting at least one device selected from the group consisting of a block, a tile and a tube of a metallurgical furnace to a temperature that reaches 1500° C.;(vi) submitting at least one device selected from the group consisting of a block of a skid rail of a metallurgical furnace to a temperature that reaches 1500° C.;(vii) submitting at least one device selected from the group consisting of a block and a tube of an immersion heater to a temperature that reaches 1500° C.; and(viii) submitting at least one device selected from the group consisting of a heater tube, a thermocouple protective tube, and a tube for transporting molten metal to a temperature that reaches 1500° C.,wherein at step (B), the at least one device comprises the refractory shaped product. 2. The method according to claim 1, wherein at step (B), the at least one device is a kiln furniture chosen from the group consisting of (i) a plate; (ii) a post; (iii) a setter; (iv) a beam; and (v) a roller, or the at least one device is chosen from the group consisting of (i) a block, a tile or a tube of a furnace of a glass making factory in a location where it is not in direct contact with molten glass; (ii) a block, a tile or a tube of a holding furnace; (iii) a block, a tile or a tube of a smelting furnace for non ferrous metals; and (iv) a block of a skid rail of a furnace for the heat treatment of iron or steel bars or of other metallurgical products. 3. The method according to claim 1, wherein the refractory shaped product has a thickness less than 1/10 of its length and/or of its width. 4. The method according to claim 3, wherein the refractory shaped product has a thickness less than 2/100 of its length and/or of its width. 5. A firing method in which an item to be fired is supported by a firing support during firing, said firing support comprising a refractory product manufactured by the method of claim 3 and being free of any coating, at least on the surface in contact with said item, and wherein said firing support has not been passivated. 6. A firing method in which an item to be fired is supported by a firing support during firing, said firing support comprising a refractory product manufactured by the method of claim 3 and being free of any coating wherein said firing support has been passivated between 800° C. and 1600° C. 7. The method according to claim 1, wherein the refractory shaped product has a thickness less than 10 mm. 8. The method according to claim 1, wherein the percentage by weight of boron in the refractory shaped product is 1.2% or less. 9. The method according to claim 1, wherein the Si3N4/SiC weight ratio in the refractory shaped product is in the range 0.1 to 0.2. 10. The method according to claim 9, wherein silicon nitride Si3N4 in the beta form in the refractory shaped product represents, as a percentage by weight, at least 80% of the whole of silicon nitride Si3N4 in the beta form and in the alpha form. 11. The method according to claim 10, wherein an amount of Si2ON2, as a percentage by weight, in the refractory shaped product is less than 5%. 12. The method according to claim 10, wherein the percentage by weight of boron in the refractory shaped product is 1.2% or less. 13. The method according to claim 10, wherein the refractory shaped product includes at least 0.3% by weight of boron, as a percentage by weight. 14. A method according to claim 9, wherein an amount of Si2ON2, as a percentage by weight, in the refractory shaped product is less than 5%. 15. The method according to claim 14, wherein the percentage by weight of boron in the refractory shaped product is 1.2% or less. 16. The method according to claim 9, wherein the percentage by weight of boron in the refractory shaped product is 1.2% or less. 17. The method according to claim 9, wherein the refractory shaped product includes at least 0.3% by weight of boron, as a percentage by weight. 18. The method according to claim 1, wherein an amount of Si2ON2, as a percentage by weight, in the refractory shaped product is less than 5%. 19. The method according to claim 1, wherein a percentage by weight of calcium in the refractory shaped product is in the range 0.05% to 1.2%. 20. The method according to claim 1, wherein the refractory shaped product includes at least 0.3% and at most 1.5% by weight of boron, as a percentage by weight. 21. A method according to claim 1, further comprising applying the refractory shaped product in a refractory lining of an incineration furnace to transfer heat by conduction. 22. The method according to claim 1, further comprising applying the refractory shaped product in a refractory lining of an incineration furnace, wherein the refractory shaped product has not been submitted to an oxidative post-treatment at a temperature between 1000° C. and 1700° C. 23. The method according to claim 1, wherein the refractory shaped product is kiln furniture or other firing support on which a coating comprising or made of metal hydrate, alumina, alumina silicate borosilicate, zirconia and mixtures thereof is deposited. 24. The method according to claim 1, wherein said refractory shaped product is kiln furniture or other firing support free of any coating. 25. The method according to claim 1, wherein the refractory shaped product is at least partly covered with a coating, to avoid peeling of the coating when the refractory shaped product is used as a support to sinter porcelain pieces. 26. The method according to claim 1, wherein said refractory shaped product at step (A) is fabricated according to a method comprising the following steps in succession: a) preparing a charge comprising a particulate mixture comprising a silicon carbide granulate and at least one boron compound;b) forming said charge in a mold;c) compacting said charge in the mold to form a preform;d) unmolding said preform;e) drying said preform; andf) firing said preform in a reducing atmosphere of nitrogen at a temperature in the range 1100° C. to 1700° C. 27. The method according to claim 26, wherein at step (A), the at least one boron compound is selected from the group consisting of oxides, carbides, nitrides, fluorides, metal alloys containing boron, and mixtures thereof. 28. The method according to claim 27, wherein the at least one boron compound is selected from the group consisting of B4C, CaB6, H3BO3, BN, and mixtures thereof. 29. The method according to claim 28, wherein the at least one boron compound is selected from the group consisting of B4C, CaB6, and mixtures thereof.

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Sintered refractory material based on silicon carbide with a silicon nitride binder

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Sintered refractory material based on silicon carbide with a silicon nitride binder

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