Metal structures and methods of using same for transporting or gettering materials disposed within semiconductor substrates
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/322
H01L-021/74
출원번호
US-0830856
(2013-03-14)
등록번호
US-9324579
(2016-04-26)
발명자
/ 주소
Presser, Nathan
Taylor, David P.
출원인 / 주소
The Aerospace Corporation
대리인 / 주소
Jones Day
인용정보
피인용 횟수 :
0인용 특허 :
37
초록▼
Embodiments of the present invention provide metal structures for transporting or gettering materials disposed on or within a semiconductor substrate. A structure for transporting a material disposed on or within a semiconductor substrate may include a metal structure disposed within the semiconduct
Embodiments of the present invention provide metal structures for transporting or gettering materials disposed on or within a semiconductor substrate. A structure for transporting a material disposed on or within a semiconductor substrate may include a metal structure disposed within the semiconductor substrate and at a spaced distance from the material. The metal structure is configured to transport the material through the semiconductor substrate and to concentrate the material at the metal structure. The material may include a contaminant disposed within the semiconductor substrate, e.g., that originates from electronic circuitry on the substrate.
대표청구항▼
1. A structure for transporting a first metal disposed on or within a semiconductor substrate, the structure comprising: a first layer comprising the first metal disposed on or within the semiconductor substrate; anda second layer comprising a second metal disposed within the semiconductor substrate
1. A structure for transporting a first metal disposed on or within a semiconductor substrate, the structure comprising: a first layer comprising the first metal disposed on or within the semiconductor substrate; anda second layer comprising a second metal disposed within the semiconductor substrate and at a spaced distance from the first layer,the second metal being configured to transport the first metal thereto through the semiconductor substrate and to concentrate the first metal at the second layer such that the first metal forms a third layer disposed on the second layer. 2. The structure of claim 1, wherein the semiconductor substrate comprises silicon, the second metal comprises platinum, and the first metal comprises H, Al, Ca, Cu, Fe, or Na. 3. The structure of claim 1, wherein the second metal comprises Al, Au, Ag, Ca, Cu, K, Li, Mn, Na, Pt, or Rb. 4. The structure of claim 1, wherein the first metal comprises H, Al, Au, Ag, Ca, Cu, K, Li, Mn, Na, Pt, or Rb. 5. The structure of claim 1, wherein the substrate has an aperture defined in an upper surface thereof, and wherein the second layer is disposed within the aperture. 6. A structure for transporting a material disposed on or within a semiconductor substrate, the structure comprising: a first layer comprising the material disposed on or within the semiconductor substrate; anda second layer comprising metal disposed within the semiconductor substrate and at a spaced distance from the first layer,the second layer being configured to transport the material thereto through the semiconductor substrate and to concentrate the material at the second layer such that the material forms a third layer disposed on the second layer,wherein the second layer is disposed within the substrate using ion implantation. 7. The structure of claim 1, wherein the first metal is disposed within the substrate using ion implantation. 8. A method for transporting a first metal disposed on or within a semiconductor substrate, the method comprising: disposing a first layer comprising the first metal disposed on or within the semiconductor substrate;disposing a second layer comprising a second metal within the semiconductor substrate and at a spaced distance from the first layer;transporting the first metal through the semiconductor substrate with the second layer; andconcentrating the first metal at the second layer such that the first metal forms a third layer disposed on the second layer. 9. The method of claim 8, wherein the semiconductor substrate comprises silicon, the second metal comprises platinum, and the first metal comprises Al, Ca, Cu, Fe, or Na. 10. The method of claim 8, wherein the second metal comprises Al, Au, Ag, Ca, Cu, K, Li, Mn, Na, Pt, or Rb. 11. The method of claim 8, wherein the first metal comprises Al, Au, Ag, Ca, Cu, K, Li, Mn, Na, Pt, or Rb. 12. The method of claim 8, wherein disposing the second layer within the semiconductor substrate comprises defining an aperture in an upper surface of the substrate and disposing the second layer within the aperture. 13. A method for transporting a material disposed on or within a semiconductor substrate, the method comprising: disposing a first layer comprising the material disposed on or within the semiconductor substrate;disposing a second layer comprising a second metal within the semiconductor substrate and at a spaced distance from the first layer;transporting the material through the semiconductor substrate with the second layer; andconcentrating the material at the second layer,wherein disposing the second layer within the semiconductor substrate comprises implanting ions of the second metal into the substrate. 14. The method of claim 8, wherein the first metal is disposed within the substrate using ion implantation. 15. The method of claim 8, wherein the second layer is entirely embedded within the semiconductor substrate. 16. The method of claim 8, wherein the first metal concentrates at an interface between the second layer and the semiconductor substrate. 17. The structure of claim 1, wherein the second layer is entirely embedded within the semiconductor substrate. 18. The structure of claim 1, wherein the first metal concentrates at an interface between the second layer and the semiconductor substrate. 19. The structure of claim 1, wherein the first metal is different than the second metal. 20. The method of claim 8, wherein the first metal is different than the second metal.
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