Encapsulation structure comprising trenches partially filled with getter material
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-023/28
B81B-007/00
B81C-001/00
H01L-023/10
H01L-023/26
H01L-023/31
출원번호
US-0555913
(2014-11-28)
등록번호
US-9327963
(2016-05-03)
우선권정보
FR-13 61827 (2013-11-29)
발명자
/ 주소
Baillin, Xavier
출원인 / 주소
Commissariat à l'énergie atomique et aux énergies alternatives
대리인 / 주소
Oblon, McClelland, Maier & Neustadt, L.L.P
인용정보
피인용 횟수 :
1인용 특허 :
7
초록▼
An encapsulation structure comprising at least: a hermetically sealed cavity in which a micro-device is encapsulated,a substrate of which one face delimits one side of the cavity,at least two trenches formed through said face of the substrate, the interior volumes of each of the trenches communicati
An encapsulation structure comprising at least: a hermetically sealed cavity in which a micro-device is encapsulated,a substrate of which one face delimits one side of the cavity,at least two trenches formed through said face of the substrate, the interior volumes of each of the trenches communicating together,first portions of getter material covering at least in part side walls of the trenches without entirely filling the trenches, and completely covering the trenches at said face of the substrate,an opening formed through one of the first portions of getter material or through the substrate and making the interior volumes of the trenches communicate with an interior volume of the cavity.
대표청구항▼
1. An encapsulation structure comprising at least: a hermetically sealed cavity in which a micro-device is encapsulated,a substrate of which one face delimits one side of the cavity,at least two trenches formed through said face of the substrate, the interior volumes of each of the trenches communic
1. An encapsulation structure comprising at least: a hermetically sealed cavity in which a micro-device is encapsulated,a substrate of which one face delimits one side of the cavity,at least two trenches formed through said face of the substrate, the interior volumes of each of the trenches communicating together,first portions of getter material covering at least in part side walls of the trenches without entirely filling the trenches, and completely covering the trenches at said face of the substrate,an opening formed through one of the first portions of getter material or through the substrate and making the interior volumes of the trenches communicate with an interior volume of the cavity. 2. The encapsulation structure according to claim 1, in which the trenches are formed in the substrate according to a grid pattern such that each of the trenches intersects at least one other trench. 3. The encapsulation structure according to claim 1, further comprising one or more second portions of getter material arranged at one or more bottom walls of the trenches. 4. The encapsulation structure according to claim 1, in which the opening is plugged with a plugging material. 5. The encapsulation structure according to claim 1, in which the first portions of getter material cover the parts of said face of the substrate located around the trenches. 6. The encapsulation structure according to claim 1, in which the first portions of getter material comprise columnar grains oriented along a direction forming a non-zero angle and less than 90° with the side walls of the trenches. 7. The encapsulation structure according to claim 1, in which the dimensions of at least one of the trenches, at said face of the substrate, are less than the dimensions of said at least one of the trenches at a bottom wall of said at least one of the trenches. 8. The encapsulation structure according to claim 1, in which at least one part of at least one of the trenches comprises several secondary trenches formed through said face of the substrate, arranged next to each other and in which the interior volumes communicate together, the first portions of getter material covering at least in part side walls of the secondary trenches. 9. The encapsulation structure according to claim 1, in which the first portions of getter material are formed by at least one first layer of a first getter material and at least one second layer of a second getter material. 10. The encapsulation structure according to claim 9, in which the second getter material is different from the first getter material. 11. The encapsulation structure according to claim 9, in which the first layer of the first getter material completely covers the trenches at said face of the substrate, and in which the second layer of the second getter material covers the first layer of the first getter material. 12. The encapsulation structure according to claim 9, in which the first layer of the first getter material partially covers the trenches at said face of the substrate, and in which the second layer of the second getter material covers the first layer of the first getter material and completely seals the trenches at said face of the substrate. 13. A method of encapsulating at least one micro-device, comprising at least the implementation of the steps of: forming at least two trenches through one face of a substrate such that the interior volumes of each of the trenches communicate together;forming first portions of getter material covering at least in part side walls of the trenches without entirely filling the trenches, and completely covering the trenches at said face of the substrate;forming at least one opening through one of the first portions of getter material or through the substrate and making the interior volumes of the trenches communicate with an interior volume of a cavity in which the micro-device is arranged and such that said face of the substrate delimits one side of the cavity;hermetic sealing of the cavity.
Pornin, Jean-Louis; Baillin, Xavier; Gillot, Charlotte; Vandroux, Laurent, Process for making a structure with hermetically closed cavity under controlled atmosphere.
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