초록 ▼

An interconnect structure and method of fabricating the same is provided. More specifically, the interconnect structure is a defect free capped interconnect structure. The structure includes a conductive material formed in a trench of a planarized dielectric layer which is devoid of cap material. Th

An interconnect structure and method of fabricating the same is provided. More specifically, the interconnect structure is a defect free capped interconnect structure. The structure includes a conductive material formed in a trench of a planarized dielectric layer which is devoid of cap material. The structure further includes the cap material formed on the conductive material to prevent migration. The method of forming a structure includes selectively depositing a sacrificial material over a dielectric material and providing a metal capping layer over a conductive layer within a trench of the dielectric material. The method further includes removing the sacrificial material with any unwanted deposited or nucleated metal capping layer thereon.

대표청구항 ▼

1. A method of forming a structure, comprising: selectively depositing a sacrificial material over a dielectric material;providing a metal capping layer over a conductive layer within a trench of the dielectric material, wherein a plurality of isolated deposits of unwanted deposited or nucleated met

1. A method of forming a structure, comprising: selectively depositing a sacrificial material over a dielectric material;providing a metal capping layer over a conductive layer within a trench of the dielectric material, wherein a plurality of isolated deposits of unwanted deposited or nucleated metal capping material is formed over the dielectric material during the providing the metal capping layer; andremoving an upper layer of the sacrificial material with the plurality of isolated deposits of unwanted deposited or nucleated metal capping material thereon such that a lower layer of the sacrificial material remains over the dielectric material. 2. The method of claim 1, wherein the removing of the sacrificial material with unwanted deposited or nucleated metal capping layer is one of: a UV assisted thermal composition process, followed by a solvent or water rinse; anda thermal decomposition process followed by a solvent or water rinse. 3. The method of claim 1, wherein the removing of the sacrificial material does not significantly chemically damage the dielectric material, the conductive layer or a liner. 4. The method of claim 1, wherein the depositing of the sacrificial material is selective to the dielectric material. 5. The method of claim 1, wherein the sacrificial material is hydrophobic, a polyxylylene material, or a silyating agent. 6. The method of claim 1, wherein the metal capping layer is formed in contact only with the conductive layer. 7. The method of claim 6, wherein the metal capping layer is one of CoWB and CoWP of different compositions. 8. The method of claim 1, wherein the conductive layer is free of the sacrificial material. 9. A method of manufacturing a structure, comprising: forming a trench in a planarized dielectric layer;forming a conductive layer in the trench of the planarized dielectric layer, wherein a top surface of the conductive layer is formed at a coplanar level as a top surface of the dielectric layer;selectively depositing a sacrificial layer over the dielectric layer;forming a cap layer on the conductive layer which causes isolated deposits of unwanted and/or rogue nucleated metal capping material on the sacrificial material; andremoving an upper portion of the sacrificial layer including the isolated deposits of unwanted deposited and/or rogue nucleated metal capping material deposited on the sacrificial layer, such that a lower portion of the sacrificial remains over the planarized dielectric layer and the planarized dielectric layer is devoid of the cap layer. 10. The method of claim 9, wherein: the cap layer is one of CoWB and CoWP of different compositions;a liner extends below portions of the conductive layer within the trench;the liner is tantalum, tantalum nitride, titanium, titanium nitride or Ruthenium;the planarized dielectric layer is silicon oxide, carbon doped oxide, SiCxOyHz or a porous dielectric material;the sacrificial layer is deposited on an exposed surface of the dielectric layer and the conductive layer is free of the sacrificial layer; andthe sacrificial layer has a ratio of deposition rate on the planarized dielectric layer to a deposition rate on copper of about 2 or greater and the sacrificial layer prevents the unwanted deposition and/or rogue nucleation of the capping layer, on the planarized dielectric layer. 11. The method of claim 1, wherein a top surface of the conductive layer is formed at a coplanar level as a top surface of the dielectric material. 12. The method of claim 1, wherein the sacrificial material has a thickness of about 1 to 500 angstroms. 13. The method of claim 1, wherein the sacrificial material is hydrophobic. 14. The method of claim 1, wherein a liner extends below portions of the conductive layer in the trench, and the liner has a thickness of about 2 nm to 20 nm.