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A method of forming an oxygen-containing ceramic hard mask film on a semiconductor substrate involves receiving a semiconductor substrate in a plasma-enhanced chemical vapor deposition (PECVD) process chamber and depositing forming by PEVCD on the substrate an oxygen-containing ceramic hard mask fil

A method of forming an oxygen-containing ceramic hard mask film on a semiconductor substrate involves receiving a semiconductor substrate in a plasma-enhanced chemical vapor deposition (PECVD) process chamber and depositing forming by PEVCD on the substrate an oxygen-containing ceramic hard mask film, the film being etch selective to low-k dielectric and copper, resistant to plasma dry-etch and removable by wet-etch. The method may further involve removing the oxygen-containing ceramic hard mask film from the substrate with a wet etch. Corresponding films and apparatus are also provided.

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1. A method of forming a hard mask film on a semiconductor substrate, the method comprising: receiving a semiconductor substrate in a plasma-enhanced chemical vapor deposition (PECVD) process chamber; andforming by PEVCD on the substrate an oxygen-containing ceramic hard mask film, the film being et

1. A method of forming a hard mask film on a semiconductor substrate, the method comprising: receiving a semiconductor substrate in a plasma-enhanced chemical vapor deposition (PECVD) process chamber; andforming by PEVCD on the substrate an oxygen-containing ceramic hard mask film, the film being etch selective to copper, resistant to plasma dry-etch and removable by wet-etch;wherein the film formation comprises, flowing a process gas consisting essentially of He, C2H2, CO2 and B2H6, and a carrier gas into the process chamber; andforming plasma to deposit the oxygen-containing ceramic hard mask film consisting essentially of the elements C, H, B and at least 5% O on the substrate. 2. The method of claim 1, wherein the percentage of precursors relative to total process gas flow is about He 80-83%/C2H2 10-11%/CO2 5-8%/B2H6 2-3%. 3. The method of claim 2, wherein the percentage of precursors relative to total process gas flow is about He 82%/C2H2 10.5%/CO2 5%/B2H6 2.5%. 4. The method of claim 2, wherein the percentage of precursors relative to total process gas flow is about He 80%/C2H2 10%/CO2 7.5%/B2H6 2.5%. 5. The method of claim 1, wherein the total flow of precursor process gas is about 10000 sccm. 6. The method of claim 1, further comprising removing the oxygen-containing ceramic hard mask film from the substrate with a wet etch. 7. The method of claim 6, where in the wet etch chemistry comprises an oxidant and a strong acid or base compound. 8. The method of claim 7, wherein the wet etch chemistry further comprises a metal corrosion inhibitor. 9. The method of claim 6, where in the wet etch chemistry comprises water. 10. The method of claim 9, wherein the wet etch chemistry further comprises a metal corrosion inhibitor. 11. The method of claim 1, wherein the formed hard mask layer is deposited over a layer of dielectric having a dielectric constant of less than about 2.8, and wherein the formed hard mask film has an etch selectivity of at least about 8:1 versus the dielectric in a dry plasma etch. 12. The method of claim 1, wherein the formed hard mask layer is deposited over a layer of polysilicon. 13. The method of claim 1, wherein the wet etch chemistry comprises 1:1 96% H2SO4:30% H2O2. 14. An apparatus for processing a hard mask film on a semiconductor substrate, the apparatus comprising: a plasma-enhanced chemical vapor deposition (PECVD) process chamber;a support in the process chamber for a semiconductor wafer substrate for holding the wafer substrate in position during hard mask deposition; anda controller comprising program instructions for a process of: receiving a semiconductor wafer substrate in a plasma-enhanced chemical vapor deposition (PECVD) process chamber; andforming by PEVCD on the substrate an oxygen-containing ceramic hard mask film, the film being etch selective to copper, resistant to plasma dry-etch and removable by wet-etch, and wherein the film formation comprises, flowing a process gas consisting essentially of He, C2H2, CO2 and B2H6, and a carrier gas into the process chamber; andforming plasma to deposit the oxygen-containing ceramic hard mask film consisting essentially of the elements C, H, B and at least 5% O on the substrate. 15. The apparatus of claim 14, further comprising: a wet etch process chamber; anda controller comprising program instructions for a process of:receiving the semiconductor wafer substrate with the oxygen-containing ceramic hard mask film formed thereon; andremoving the oxygen-containing ceramic hard mask film from the substrate with a wet etch. 16. The apparatus of claim 14, wherein the wet etch chemistry comprises 1:1 96% H2SO4: 30% H2O2.