A structure includes a first interconnect structure and a second interconnect structure each located within an interlevel dielectric (ILD), a first top metal layer and a second top metal layer disposed on and in direct electrical connection with the first interconnect, a third top metal layer and a
A structure includes a first interconnect structure and a second interconnect structure each located within an interlevel dielectric (ILD), a first top metal layer and a second top metal layer disposed on and in direct electrical connection with the first interconnect, a third top metal layer and a fourth top metal layer disposed on and in direct electrical connection with the second interconnect, a silicon dioxide layer above the first, second, third and fourth top metal layers, the silicon layer is in direct contact with the first and fourth top metal layers, and a barrier layer separating the silicon dioxide layer from each of the second and third top metal layers, a high resistance connection exist between the third top metal layer and the fourth top metal layer due to the presence of the silicon dioxide layer.
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1. A structure comprising: a first interconnect structure and a second interconnect structure each located within an interlevel dielectric (ILD);a first top metal layer and a second top metal layer disposed on and in direct electrical connection with the first interconnect;a third top metal layer an
1. A structure comprising: a first interconnect structure and a second interconnect structure each located within an interlevel dielectric (ILD);a first top metal layer and a second top metal layer disposed on and in direct electrical connection with the first interconnect;a third top metal layer and a fourth top metal layer disposed on and in direct electrical connection with the second interconnect;a silicon dioxide layer above the first, second, third and fourth top metal layers, the silicon dioxide layer is in direct contact with the first and fourth top metal layers; anda barrier layer separating the silicon dioxide layer from each of the second and third top metal layers,wherein a high resistance connection exist between the third top metal layer and the fourth top metal layer due to the presence of the silicon dioxide layer. 2. The structure of claim 1, wherein the structure is present in an oxygen-containing environment. 3. The structure of claim 1, wherein the high resistance connection between the third top metal layer and the fourth top metal layer damages an electrical connection between the third top metal layer and the fourth top metal layer. 4. The structure of claim 1, wherein the first top metal layer, the second top metal layer, the third top metal layer and the fourth top metal layer comprise a copper-rich material. 5. The structure of claim 1, wherein the silicon dioxide layer comprise an oxidized silicon layer, the oxidized silicon layer comprising catalysts copper atoms diffused from the first and fourth top metal layers. 6. The structure of claim 1, wherein a length of the silicon dioxide layer determines a time for the silicon dioxide layer to be substantially oxidized and damage the electrical connection between the third top metal layer and the fourth top metal layer. 7. The structure of claim 1, further comprising: a code to bypass the damaged electrical connection between the third top metal layer and the fourth top metal layer and reestablish a current flow in the structure. 8. The structure of claim 1, further comprising: a patterned protective layer above the ILD; anda solder structure located on the patterned protective layer. 9. A structure comprising: a plurality of top metal layers in an interlevel dielectric (ILD), the plurality of top metal layers are electrically connected to one or more interconnect structures of an IC chip;a barrier layer directly above two adjacent top metal layers, the two adjacent top metal layers being located between two outer top metal layers; andan oxidized silicon layer above the two adjacent top metal layers and the two outer top metal layers, the oxidized silicon layer being directly on top of the outer top metal layers,wherein the oxidized silicon layer is separated from the two adjacent top metal layers by the barrier layer,wherein the oxidized silicon layer, the two adjacent top metal layers and the barrier layer comprises a sensing circuit,wherein the oxidized silicon layer damages the sensing circuit and makes the IC chip inoperable. 10. The structure of claim 9, wherein the IC chip is present in an oxygen-containing environment. 11. The structure of claim 9, wherein the top metal layers comprise a copper-rich material. 12. The structure of claim 9, wherein the oxidized silicon layer comprises an insulating silicon oxide layer. 13. The structure of claim 9, wherein a high resistance connection exist between the two adjacent top metal layers and the oxidized silicon layer that halts current flow in the structure. 14. The structure of claim 13, wherein the high resistance connection between the two adjacent top metal layers and the oxidized silicon layer damages the sensing circuit, the damaged sensing circuit comprises an inoperable IC chip. 15. The structure of claim 9, wherein a length of the oxidized silicon layer determines a time for the oxidized silicon layer to be substantially oxidized and damage the IC chip. 16. The structure of claim 15, wherein the time for the oxidized silicon layer to be substantially oxidized comprises to a shelf life of the IC chip. 17. The structure of claim 10, wherein the oxygen-containing environment comprises an oxygen-containing fluid such as air. 18. The structure of claim 9, further comprising: a reprogramming code, wherein the reprogramming code allows the IC chip to function without the damaged sensing circuit and regain operability.
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