Semiconductor light emitting device, light emitting device package comprising the same, and lighting device comprising the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/00
H01L-033/32
H01L-033/00
H01L-033/02
H01L-033/06
H01L-033/14
H01L-033/50
H01L-033/24
H01L-033/46
B82Y-020/00
출원번호
US-0661950
(2015-03-18)
등록번호
US-9337391
(2016-05-10)
우선권정보
KR-10-2014-0103943 (2014-08-11)
발명자
/ 주소
Jean, Jai Won
Kim, Min Hwan
Sim, Eun Deok
Lee, Jong Hyun
Lee, Heon Ho
Lee, Ho Chul
Hyun, Jae Sung
출원인 / 주소
Samsung Electronics Co., Ltd.
대리인 / 주소
McDermott Will & Emery LLP
인용정보
피인용 횟수 :
8인용 특허 :
46
초록▼
A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1−x−yN (0≦x≦0.1, 0.01≦y≦0.1), an active layer disposed on
A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1−x−yN (0≦x≦0.1, 0.01≦y≦0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.
대표청구항▼
1. A semiconductor light emitting device, comprising: a first conductivity-type semiconductor layer including an n-type GaN contact layer, an n-type GaN layer disposed on the n-type GaN contact layer, doped with silicon (Si) acting as an n-type dopant in a concentration of 2×1018 cm−3 to 9×1019 cm−3
1. A semiconductor light emitting device, comprising: a first conductivity-type semiconductor layer including an n-type GaN contact layer, an n-type GaN layer disposed on the n-type GaN contact layer, doped with silicon (Si) acting as an n-type dopant in a concentration of 2×1018 cm−3 to 9×1019 cm−3, and having a thickness of 1 nm to 500 nm, and an n-type super-lattice layer disposed on the n-type GaN layer and having a structure in which two or more AlxInyGazN (0≦x,y,z≦1, x+y+z>0) having different compositions are repeatedly stacked;a border layer disposed on the first conductivity-type semiconductor layer and having band gap energy decreasing in a direction away from the first conductivity-type semiconductor layer;an active layer contacting the border layer and having a multiple quantum well structure in which five or more quantum well layers and four or more quantum barrier layers are alternately stacked; anda second conductivity-type semiconductor layer including a p-type AlxInyGazN layer (0≦x,y,z≦1, x+y+z>0) disposed on the active layer and having a composition ratio of aluminum (Al) increased or decreased in a direction away from the active layer, and a p-type GaN layer disposed on the p-type AlxInyGazN layer (0≦x,y,z≦1, x+y+z>0), doped with magnesium (Mg) acting as a p-type dopant in a concentration of 1×1018 cm−3 to 9×1021 cm−3, and having a thickness of 30 nm to 150 nm, the concentration of magnesium being increased or decreased in a thickness direction,wherein at least one of the first conductivity-type semiconductor layer, the border layer, the active layer and the second conductivity-type semiconductor layer has a V-shaped distortion containing layer formed thereon. 2. The semiconductor light emitting device of claim 1, wherein the border layer contains a dopant, the dopant is at least one of elements contained in the quantum well layer, and a concentration of the dopant is lower than that of the element contained in the quantum well layer. 3. The semiconductor light emitting device of claim 1, wherein the active layer emits light within a UV region (200 to 440 nm) or light within a blue region (440 nm to 480 nm). 4. The semiconductor light emitting device of claim 1, wherein the first conductivity-type semiconductor layer or the second conductivity-type semiconductor layer has one or both of a phosphor layer and a quantum dot layer disposed thereon, and the phosphor layer comprises,at least one selected from a group consisting of at least one oxynitride-based phosphor selected from a group consisting of Y3Al5O12:Ce, Tb3Al5O12:Ce and Lu3Al5O12:Ce; one silicate-based phosphor of (Ba,Sr)2SiO4:Eu or (Ba,Sr)3SiO5:Ce; at least one nitride-based phosphor selected from a group consisting of β-SiAlON:Eu, La3Si6N11:Ce, α-SiAlON:Eu, CaAlSiN3:Eu, Sr2Si5N8:Eu, SrSiAl4N7:Eu, SrLiAl3N4:Eu, and Ln4−x(EuzM1−z)xSi12−yAlyO3+x+yN18−x−y (0.5≦x≦3, 0
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