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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0592509 (2015-01-08) |
등록번호 | US-9343272 (2016-05-17) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 57 인용 특허 : 584 |
Methods of forming self-aligned structures on patterned substrates are described. The methods may be used to form metal lines or vias without the use of a separate photolithography pattern definition operation. Self-aligned contacts may be produced regardless of the presence of spacer elements. The
Methods of forming self-aligned structures on patterned substrates are described. The methods may be used to form metal lines or vias without the use of a separate photolithography pattern definition operation. Self-aligned contacts may be produced regardless of the presence of spacer elements. The methods include directionally ion-implanting a gapfill portion of a gapfill silicon oxide layer to implant into the gapfill portion without substantially ion-implanting the remainder of the gapfill silicon oxide layer (the sidewalls). Subsequently, a remote plasma is formed using a fluorine-containing precursor to etch the patterned substrate such that the gapfill portions of silicon oxide are selectively etched relative to other exposed portions exposed parallel to the ion implantation direction. Without ion implantation, the etch operation would be isotropic owing to the remote nature of the plasma excitation during the etch process.
1. A method of etching a patterned substrate, the method comprising: ion implanting the patterned substrate, wherein ion implanting the patterned substrate comprises ion implanting an exposed bottom portion of a gap in a silicon oxide layer on the patterned substrate, wherein the exposed bottom port
1. A method of etching a patterned substrate, the method comprising: ion implanting the patterned substrate, wherein ion implanting the patterned substrate comprises ion implanting an exposed bottom portion of a gap in a silicon oxide layer on the patterned substrate, wherein the exposed bottom portion and an exposed sidewall portion of the gap each comprise silicon oxide;flowing a fluorine-containing precursor into a remote plasma region fluidly coupled to a substrate processing region by way of a showerhead while forming a remote plasma in the remote plasma region to produce plasma effluents;flowing a hydrogen-and-oxygen-containing precursor into the substrate processing region without first passing the hydrogen-and-oxygen-containing precursor through the remote plasma region, wherein the hydrogen-and-oxygen-containing precursor comprises an O—H bond;combining the plasma effluents with the hydrogen-and-oxygen-containing precursor in the substrate processing region to etch the exposed bottom portion more rapidly than the exposed sidewall portion. 2. The method of claim 1 wherein the operation of ion implanting the patterned substrate comprises ion implanting the exposed bottom portion of the gap in the silicon oxide layer to an interface between the exposed bottom portion and an underlying silicon portion. 3. The method of claim 1 wherein the operation of ion implanting the patterned substrate comprises ion implanting the patterned substrate with one or more of boron, fluorine, water, helium, phosphorus or hydrogen. 4. The method of claim 1 wherein the exposed bottom portion etches more rapidly than the exposed sidewall portion by a ratio of at least 15:1. 5. The method of claim 1 wherein the exposed bottom portion possesses a higher dopant concentration than the exposed sidewall portion. 6. The method of claim 1 wherein the operation of ion implanting the patterned substrate is a self-limiting etch which stops after the exposed bottom portion is removed despite a continued presence of the plasma effluents. 7. A method of etching a patterned substrate, the method comprising: ion implanting the patterned substrate, wherein ion implanting the patterned substrate comprises ion implanting gapfill silicon oxide at the bottom of a gap on the patterned substrate along an ion implantation direction; andanisotropically etching the patterned substrate such that gapfill silicon oxide etches more rapidly than sidewall silicon oxide. 8. The method of claim 7 wherein the operation of ion implanting the patterned substrate comprises accelerating ions vertically into the gap on the patterned substrate. 9. The method of claim 7 wherein the operation of anisotropically etching the patterned substrate is a dry-etch process. 10. The method of claim 7 wherein the operation of anisotropically etching the patterned substrate removes all the gapfill silicon oxide and exposes underlying silicon. 11. The method of claim 7 wherein the operation of ion implanting the patterned substrate is a local plasma process. 12. A method of etching a patterned substrate, the method comprising: ion implanting the patterned substrate, wherein ion implanting the patterned substrate comprises ion implanting an exposed bottom portion of a gap in a silicon oxide layer on the patterned substrate, wherein the exposed bottom portion and an exposed sidewall portion of the gap each comprise silicon oxide;placing the patterned substrate in a substrate processing region of a substrate processing chamber;flowing a fluorine-containing precursor into a remote plasma region fluidly coupled to the substrate processing region by way of a showerhead while forming a remote plasma in the remote plasma region to produce plasma effluents;flowing water vapor into the substrate processing region without first passing the water vapor through the remote plasma region;combining the plasma effluents with the water vapor in the substrate processing region; andetching the patterned substrate, wherein the operation of etching the patterned substrate etches the exposed bottom portion more rapidly than the exposed sidewall portion. 13. The method of claim 12 wherein the operation of flowing water vapor into the substrate processing region further comprises flowing an alcohol into the substrate processing region, also without first passing the alcohol through the remote plasma region. 14. The method of claim 12 wherein an electron temperature in the substrate processing region during the operation of etching the patterned substrate is less than 0.5 eV. 15. The method of claim 12 wherein the water vapor is not excited by any remote plasma formed outside the substrate processing region. 16. The method of claim 12 wherein the fluorine-containing precursor comprises a precursor selected from the group consisting of atomic fluorine, diatomic fluorine, nitrogen trifluoride, carbon tetrafluoride, hydrogen fluoride and xenon difluoride. 17. The method of claim 12 wherein the fluorine-containing precursor and the plasma effluents are essentially devoid of hydrogen.
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