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특허 상세정보

Semiconductor device and fabrication method thereof

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-029/78    H01L-027/12    H01L-029/66    G02F-001/1333    G02F-001/1339    G02F-001/1362    G02F-001/1368    H01L-029/786    G02F-001/1345   
출원번호 US-0510503 (2014-10-09)
등록번호 US-9343570 (2016-05-17)
우선권정보 JP-11-191093 (1999-07-06)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Husch Blackwell LLP
인용정보 피인용 횟수 : 1  인용 특허 : 185
초록

A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.

대표
청구항

1. A semiconductor device comprising: a first substrate;a second substrate facing to the first substrate;a shading film comprising Ti, Cr, or Al over the second substrate, the shading film being located between the first substrate and the second substrate;a first transistor over the first substrate;a second transistor over the first substrate;a first spacer overlapping with a semiconductor layer of the first transistor;a second spacer a size of which is different with a size of the first spacer; the second spacer overlapping with a semiconductor layer of...

이 특허에 인용된 특허 (185)

  1. Takemura Yasuhiko (Kanagawa JPX) Hamatani Toshiji (Kanagawa JPX) Konuma Toshimitsu (Kanagawa JPX) Koyama Jun (Kanagawa JPX) Kawasaki Yuji (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Yamazaki Shunpei. Active matrix display and electrooptical device. USP1997075650636.
  2. Yamazaki, Sunpei; Koyama, Jun; Takemura, Yasuhiko. Active matrix display device. USP2005076914642.
  3. Ichikawa Takeshi,JPX ; Miyawaki Mamoru,JPX ; Kurematsu Katsumi,JPX ; Koyama Osamu,JPX. Active matrix display in which adjacent transistors share a common source region. USP2000056057897.
  4. Stewart Roger G. (Neshanic Station NJ). Active matrix electroluminescent display and method of operation. USP1994045302966.
  5. Mikoshiba Hiroaki (Tokyo JPX). Active matrix liquid crystal display cell with light blocking capacitor electrode above insulating layer. USP1996035499123.
  6. Matsumoto Hiroshi (Hachioji JPX). Active matrix liquid crystal display having a peripheral driving circuit element. USP1994065323042.
  7. Yudasaka Ichio (Suwa JPX) Matsuo Minoru (Suwa JPX) Takenaka Satoshi (Suwa JPX). Active matrix panel and manufacturing method including TFTs having variable impurity concentration levels. USP1996105563427.
  8. Ohtani Hisashi,JPX ; Ogata Yasushi,JPX. Active matrix type display device and method of manufacturing the same. USP2001086271543.
  9. Kobayashi Kazuhiro,JPX ; Masutani Yuichi,JPX ; Murai Hiroyuki,JPX. Active-matrix liquid crystal display and fabrication method thereof. USP1998065767930.
  10. Zhang Hongyong,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX. Apparatus for laser ion doping. USP1998125849043.
  11. Chien Sun-Chieh (Hsin-Chu TWX) Wu Tzong-Shien (Hsin-Chu TWX). Blanket N-LDD implantation for sub-micron MOS device manufacturing. USP1995055413945.
  12. Ohtani, Hisashi. Camera having display device utilizing TFT. USP2005126972435.
  13. Monsorno Richard (Jacksonville FL). Capacitor with buried isolated electrode. USP1996115576926.
  14. Miyazaki Daisuke,JPX ; Kurauchi Shoichi,JPX ; Hatoh Hitoshi,JPX ; Yamamoto Takeshi,JPX ; Midorikawa Teruyuki,JPX. Color liquid crystal display apparatus. USP1999105969784.
  15. Miyazaki Daisuke,JPX ; Kurauchi Shoichi,JPX ; Hatoh Hitoshi,JPX ; Yamamoto Takeshi,JPX ; Midorikawa Teruyuki,JPX. Color liquid crystal display apparatus. USP1998095815232.
  16. Saito Tamio (Tokyo JPX) Nakai Toshio (Tokyo JPX). Contact color image sensor. USP1987034654536.
  17. Hirakata Yoshiharu,JPX ; Yamazaki Shunpei,JPX. Contact structure. USP2001016177974.
  18. Hirakata, Yoshiharu; Yamazaki, Shunpei. Contact structure. USP2009077561242.
  19. Hirakata, Yoshiharu; Yamazaki, Shunpei. Contact structure. USP2010077760316.
  20. Yoshiharu Hirakata JP; Shunpei Yamazaki JP. Contact structure. USP2002066404480.
  21. Yamazaki Shunpei,JPX. Display device. USP2000096115090.
  22. Yamazaki Shunpei,JPX. Display device. USP1999095952708.
  23. Zhang Hongyong,JPX ; Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Hirakata Yoshiharu,JPX. Display device or electronic device having liquid crystal display panel. USP2001096288764.
  24. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX. Electro-optical device having silicon nitride interlayer insulating film. USP2001036198133.
  25. Friend Richard H. (Cambridge NY GBX) Burroughes Jeremy H. (New York NY) Bradley Donal D. (Cambridge GBX). Electroluminescent devices. USP1993095247190.
  26. Takano Tamae,JPX ; Ohtani Hisashi,JPX. Electronic apparatus having thin film transistors. USP2001036201585.
  27. Miyazaki Minoru,JPX ; Murakami Akane,JPX ; Cui Baochun,JPX ; Yamamoto Mutsuo,JPX. Electronic circuit. USP2000026031290.
  28. Miyazaki Minoru,JPX ; Murakami Akane,JPX ; Cui Baochun,JPX ; Yamamoto Mutsuo,JPX. Electronic circuit. USP2000126166414.
  29. Miyazaki Minoru,JPX ; Murakami Akane,JPX ; Cui Baochun,JPX ; Yamamoto Mutsuo,JPX. Electronic circuit. USP1998095804878.
  30. Yamazaki,Shunpei; Adachi,Hiroki. Ferroelectric liquid crystal and goggle type display devices. USP2007107279711.
  31. Adan Alberto Oscar,JPX ; Kaneko Seiji,JPX. Field effect transistor and CMOS element having dopant exponentially graded in channel. USP1998115841170.
  32. Takemura Yasuhiko (Kanagawa JPX). Gate insulated semiconductor device. USP1996125581092.
  33. Ferrin Frank J. (Plymouth MN) Droessler Justin G. (Fridley MN). Head gear display system using off-axis image sources. USP1996115576887.
  34. Murouchi Katsunori,JPX. LCD cell having two supporting gap members different in height. USP2000056067144.
  35. Zhang Hongyong,JPX ; Takenouchi Akira,JPX ; Miyamoto Tadayoshi,JPX ; Yoshinouchi Atsushi,JPX. LCD device having coupling capacitances and shielding films. USP1999105966193.
  36. Fukunaga Yoko,JPX ; Tsuji Yoshiko ; Ikeda Mitsushi,JPX ; Nikaido Masaru,JPX ; Kurauchi Shoichi,JPX. LCD having an organic-inorganic hybrid glass functional layer. USP1998015706064.
  37. Yamazaki, Shunpei; Ohtani, Hisashi; Tanaka, Koichiro; Kasahara, Kenji; Kawasaki, Ritsuko. Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device. USP2004056730550.
  38. Yamazaki, Shunpei; Ohtani, Hisashi; Tanaka, Koichiro; Kasahara, Kenji; Kawasaki, Ritsuko. Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device. USP2004066753212.
  39. Yamazaki, Shunpei; Ohtani, Hisashi; Tanaka, Koichiro; Kasahara, Kenji; Kawasaki, Ritsuko. Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device. USP2005126974731.
  40. Yamazaki,Shunpei; Ohtani,Hisashi; Tanaka,Koichiro; Kasahara,Kenji; Kawasaki,Ritsuko. Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device. USP2007027179698.
  41. Tanaka, Koichiro; Yamazaki, Shunpei; Kawasaki, Ritsuko. Laser irradiation apparatus laser irradiation method, semiconductor device and method of manufacturing a semiconductor device. USP2005086927109.
  42. Tanaka,Koichiro; Yamazaki,Shunpei; Kawasaki,Ritsuko. Laser irradiation apparatus, laser irradiation method, semiconductor device, and method of manufacturing a semiconductor device. USP2008097419861.
  43. Fujimaki Eriko,JPX ; Yamamoto Yuji,JPX. Latitudinal LCD with cylindrical and eliptical spacers at intersection of signal and gate lines. USP2000086097467.
  44. Takasu Hiroaki,JPX ; Kojima Yoshikazu,JPX ; Takahashi Kunihiro,JPX. Light valve having a semiconductor film and a fabrication process thereof. USP1999115982002.
  45. Sato Masahiko (Atsugi JPX) Konuma Toshimitsu (Atsugi JPX) Odaka Seiichi (Kisakata JPX) Yamaguchi Toshiharu (Zama JPX) Watanabe Toshio (Atsugi JPX) Aoyagi Osamu (Atsugi JPX) Tabata Kaoru (Atsugi JPX) . Liquid crystal device and method for manufacturing same with spacers formed by photolithography. USP1995015379139.
  46. Fukui Takeshi (Atsugi JPX) Watanabe Toshio (Atsugi JPX). Liquid crystal device wherein the most optimum ratio of spacing between substrates in which the liquid crystal is dispos. USP1992025087114.
  47. Ishiwata Kazuya (Yokosuka JPX) Enomoto Takashi (Zama JPX) Yoshioka Toshifumi (Hiratsuka JPX). Liquid crystal device with metal oxide masking films with breaks between films under metal lead electrodes. USP1995055412494.
  48. Colgan Evan G. ; Lu Minhua ; Melcher Robert Lee ; Sanford James Lawrence ; Yang Kei-Hsiung. Liquid crystal display. USP1998115831710.
  49. Nishi Takeshi,JPX ; Konuma Toshimitsu,JPX ; Tsuji Takahiro,JPX ; Yamamoto Yoshitaka,JPX ; Adachi Masahiro,JPX ; Ogishima Kiyoshi,JPX. Liquid crystal display and method of manufacturing the same. USP1998095815231.
  50. Watanabe Yoshihiro (Yokohama JPX) Nakamura Hiroki (Chigasaki JPX) Sugawara Takako (Kawasaki JPX). Liquid crystal display apparatus having gap adjusting means under the sealing region. USP1997115691793.
  51. Hirakata Yoshiharu,JPX ; Yamazaki Shunpei,JPX. Liquid crystal display contact structure having conducting spacers and plural conducting films. USP1999115982471.
  52. Daisuke Miyazaki JP; Shoichi Kurauchi JP; Hitoshi Hatoh JP; Akiko Ueno JP; Teruyuki Midorikawa JP; Makoto Hasegawa JP. Liquid crystal display device. USP2002096445437.
  53. Miyazaki Daisuke,JPX ; Kurauchi Shoichi,JPX ; Hatoh Hitoshi,JPX ; Midorikawa Teruyuki,JPX. Liquid crystal display device. USP2001096287733.
  54. Miyazaki Daisuke,JPX ; Kurauchi Shoichi,JPX ; Hatoh Hitoshi,JPX ; Ueno Akiko,JPX ; Midorikawa Teruyuki,JPX ; Hasegawa Makoto,JPX. Liquid crystal display device. USP1999115978061.
  55. Miyazaki, Daisuke; Kurauchi, Shoichi; Hatoh, Hitoshi; Ueno, Akiko; Midorikawa, Teruyuki; Hasegawa, Makoto. Liquid crystal display device. USP2005056888608.
  56. Yamada Nobuaki (Higashiosaka JPX) Kondo Masahiko (Kitakatsuragi-gun JPX) Kohzaki Shuichi (Nara JPX) Ohue Makoto (Tenri JPX) Shimada Shinji (Kashihara JPX) Adachi Masahiro (Nara JPX). Liquid crystal display device and a method for producing the same. USP1996125583675.
  57. Uda Mitsuru,JPX ; Shinohara Masami,JPX ; Nishida Mamoru,JPX. Liquid crystal display device and a method of fabricating same. USP1998045739890.
  58. Kurauchi Shoichi,JPX ; Miyazaki Daisuke,JPX ; Hatoh Hitoshi,JPX ; Akiyoshi Muneharu,JPX ; Midorikawa Teruyuki,JPX. Liquid crystal display device comprising switching elements of reverse stagger type and common electrode formed over th. USP1999065917572.
  59. Hirakata, Yoshiharu; Nishi, Takeshi; Yamazaki, Shunpei. Liquid crystal display device having a gap retaining member made of resin formed directly over the driver circuit. USP2011108045125.
  60. Matsushima Yasuhiro,JPX. Liquid crystal display device having an insulation film made of organic material between an additional capacity and a bu. USP1999065917563.
  61. Nakamura Hiroki,JPX. Liquid crystal display device having the driving circuit disposed in the seal area, with different spacer density in driving circuit area than display area. USP2000126163357.
  62. Miyazaki Daisuke,JPX ; Kurauchi Shoichi,JPX ; Hatoh Hitoshi,JPX ; Midorikawa Teruyuki,JPX. Liquid crystal display device spacers formed from stacked color layers. USP1998055757451.
  63. Hasegawa Rei (Yokohama JPX) Mori Miki (Yokohama JPX). Liquid crystal display device with acrylic polymer spacers and method of manufacturing the same. USP1996035499128.
  64. Onishi Noriaki,JPX ; Yamada Nobuaki,JPX. Liquid crystal display device with at least 7.degree. C. liquid crystal to isotropic phase transition temperature differ. USP1998125844643.
  65. Tamai Kazuhiko,JPX ; Koden Mitsuhiro,JPX. Liquid crystal display element with a portion of an alignment layer covers spacer is directly bonded to the alignment la. USP1999035880803.
  66. Zhang Hongyong,JPX ; Teramoto Satoshi,JPX. Liquid crystal display panel. USP2000046055034.
  67. Zhang, Hongyong; Teramoto, Satoshi. Liquid crystal display panel. USP2010027667817.
  68. Kim Jeong-Hyun,KRX ; Kim Woong-Kwon,KRX ; Lyu Ki-Hyun,KRX ; Park Sung-Il,KRX ; Lim Kyoung-Nam,KRX ; Lee Hoo-Young,KRX. Liquid crystal display with planarizing organic gate insulator and organic planarization layer and method for manufacturing. USP2000086100954.
  69. Smith ; Jr. Willis H. ; Erdmann John H. ; Reif Philip G.. Liquid crystal light valves using internal, fixed spacers and method of incorporating same. USP2000046049370.
  70. Baron Yair (Southfield MI) Vijan Meera (Troy MI). Liquid crystal matrix display having improved spacers and method of making same. USP1987034653864.
  71. Konuma Toshimitsu (Kanagawa JPX) Nishi Takeshi (Kanagawa JPX) Shimizu Michio (Chiba JPX) Mori Harumi (Kanagawa JPX) Moriya Kouji (Kanagwa JPX) Murakami Satoshi (Kanagawa JPX). Liquid-crystal electro-optical apparatus and method of manufacturing the same. USP1997015594569.
  72. Hwang Jeong-Mo (Plano TX). Local thinning of channel region for ultra-thin film SOI MOSFET with elevated source/drain. USP1996105567966.
  73. Chang Kuang-Yeh ; Rao Ramachandr A.. Low voltage CMOS process and device with individually adjustable LDD spacers. USP2001046222238.
  74. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX. MIS semiconductor device and method for fabricating the same. USP1999085939731.
  75. Abecassis Max (19020 NE. 20 Ave. Miami FL 33179). Method and system for automatically tracking a zoomed video image. USP1997035610653.
  76. Koyama Jun,JPX ; Kawasaki Yuji,JPX. Method for driving active matrix display device. USP1999055903249.
  77. Yamazaki, Shunpei; Arai, Yasuyuki. Method for fabricating a semiconductor device. USP2004076762081.
  78. Huang Tiao-Yuan (Cupertino CA). Method for fabricating double implanted LDD transistor self-aligned with gate. USP1990104963504.
  79. Zhang Hongyong (Kanagawa JPX) Ohnuma Hideto (Kanagawa JPX) Yamaguchi Naoaki (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX). Method for fabricating thin film transistor using anodic oxidation. USP1996045508209.
  80. Pollack Gordon P. (Richardson TX). Method for forming a mesa-isolated SOI transistor having a split-process polysilicon gate. USP1996015482871.
  81. West John L. ; Bos Philip J.. Method for forming uniformly-spaced plastic substrate liquid crystal displays. USP1998065766694.
  82. Foschaar James A. ; Garvin Hugh L.. Method for making topographic projections. USP2001056236445.
  83. Ohtani Hisashi (Kanagawa JPX) Miyanaga Akiharu (Kanagawa JPX) Fukunaga Takeshi (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX). Method for manufacturing a semiconductor device. USP1997075643826.
  84. Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Fukunaga Takeshi,JPX ; Zhang Hongyong,JPX. Method for manufacturing a semiconductor device. USP1999075923962.
  85. Sato Masahiko (Atsugi JPX) Konuma Toshimitsu (Atsugi JPX) Odaka Seiichi (Kisakata JPX) Yamaguchi Toshiharu (Zama JPX) Watanabe Toshio (Atsugi JPX) Aoyagi Osamu (Atsugi JPX) Tabata Kaoru (Atsugi JPX) . Method for manufacturing liquid crystal device with spacers formed by photolithography. USP1989104874461.
  86. Lee Joo-hyung (Seoul KRX). Method for manufacturing offset polysilicon thin-film transistor. USP1996085543340.
  87. Zhang Hongyong (Kanagawa JPX) Uochi Hideki (Kanagawa JPX) Takayama Toru (Kanagawa JPX) Fukunaga Takeshi (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX). Method for manufacturing semiconductor device. USP1995045403772.
  88. Zhang Hongyong,JPX ; Takayama Toru,JPX. Method for producing a semiconductor device including doping with a catalyst that is a group IV element. USP2000126160279.
  89. Yamazaki Shunpei,JPX ; Nakajima Setsuo,JPX ; Arai Yasuyuki,JPX. Method for producing display device. USP1998115834327.
  90. Umeda Akira,JPX. Method for testing frequency response characteristics of laser displacement/vibration meters. USP2001096286359.
  91. Umeda Akira,JPX. Method for testing frequency response characteristics of laser displacement/vibration meters. USP1999095952554.
  92. Racanelli Marco (Phoenix AZ) Hwang Bor-Yuan C. (Tempe AZ) Foerstner Juergen (Mesa AZ) Huang Wen-Ling M. (Phoenix AZ). Method of adjusting a threshold voltage for a semiconductor device fabricated on a semiconductor on insulator substrate. USP1996075532175.
  93. Beinglass Israel (Sunnyvale CA) Borland John (San Jose CA). Method of constructing lightly doped drain (LDD) integrated circuit structure. USP1990124975385.
  94. Mase Akira (Aichi JPX) Hiroki Masaaki (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX) Yamazaki Shunpei (Tokyo JPX). Method of driving an LCD employing an active matrix with short pulses for gray scale. USP1996085543947.
  95. Kenji Kasahara JP. Method of fabricating a semiconductor device. USP2002036358766.
  96. Kobayashi Kazuhiro,JPX ; Masutani Yuichi,JPX ; Murai Hiroyuki,JPX. Method of fabricating an active-matrix liquid crystal display. USP2000116146930.
  97. Shimizu Masahiro (Hyogo JPX) Mitsui Katsuyoshi (Hyogo JPX) Yama Yomiyuki (Hyogo JPX) Yasunaga Masatoshi (Hyogo JPX). Method of fabricating semiconductor device having sidewall spacers and oblique implantation. USP1993065217910.
  98. Kim Jin Young (Daegu KRX). Method of making a liquid crystal display. USP1994085338240.
  99. Shibuya Tsukasa,JPX ; Yoshinouchi Atsushi,JPX ; Zhang Hongyong,JPX ; Takenouchi Akira,JPX. Method of making an active matrix type display. USP1999075923961.
  100. Yamazaki,Shunpei; Ohtani,Hisashi; Ohnuma,Hideto. Method of manufacturing a semiconductor device. USP2006077071041.
  101. Friend Richard H. (Cambridge NY GBX) Burroughes Jeremy H. (New York NY) Bradley Donal D. (Cambridge GBX). Method of manufacturing of electrolumineschent devices. USP1995035399502.
  102. Morikawa Masahiko,JPX ; Shimada Shinji,JPX. Method of manufacturing spacing layer for liquid crystal display using light shielding layer as a mask. USP2000026031593.
  103. Fukuda Kaichi,JPX ; Uemoto Tsutomu,JPX ; Hirayama Hideo,JPX ; Kawamura Shinichi,JPX ; Toriyama Shigetaka,JPX. Method of manufacturing thin film transistor. USP2000086096585.
  104. Whetten Nathan R. (Ballston Lake NY). Multi-layer address lines for amorphous silicon liquid crystal display devices. USP1992105153754.
  105. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Shibata Hiroshi,JPX ; Fukunaga Takeshi,JPX. Pixel TFT and driver TFT having different gate insulation width. USP2001086278131.
  106. Katada Mitsutaka (Kariya JPX) Muramoto Hidetoshi (Nagoya JPX) Fuzino Seizi (Toyota JPX) Hattori Tadashi (Okazaki JPX) Abe Katsunori (Obu JPX). Process for fabricating a complementary MIS transistor. USP1996075532176.
  107. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX. Process for fabricating a thin film transistor semiconductor device. USP1999035879977.
  108. Lucas Kevin D. ; Pettinato Christopher D. ; Clark Wayne D. ; Filipiak Stanley M. ; Lii Yeong Jyh. Process for forming a combination hardmask and antireflective layer. USP2001096287951.
  109. Zhang Hongyong (Kanagawa JPX) Yamazaki Shunpei (Tokyo JPX) Takemura Yasuhiko (Kanagawa JPX). Process for laser processing and apparatus for use in the same. USP1995065424244.
  110. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Kitakado Hidehito,JPX. Process of fabricating a semiconductor device. USP2001106306694.
  111. Fukunaga Takeshi,JPX. Reflection type display device and electronic device. USP2000096115094.
  112. Takeshi Fukunaga JP. Reflection type display device having display part covered with insulating layer in which carbon-based material or pigment is dispersed. USP2002066400434.
  113. Fukunaga,Takeshi. Reflection type display device using a light shading film with a light shading material evenly dispersed throughout. USP2007027176993.
  114. Murakami,Satoshi; Hirakata,Yoshiharu; Fujimoto,Etsuko; Yamazaki,Yu; Yamazaki,Shunpei. Semiconductor device. USP2008027330234.
  115. Shunpei Yamazaki JP. Semiconductor device. USP2002096445059.
  116. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Ohtani Hisashi,JPX. Semiconductor device. USP2000116147667.
  117. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun. Semiconductor device and fabrication method thereof. USP2009087569854.
  118. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun. Semiconductor device and fabrication method thereof. USP2004086777254.
  119. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto. Semiconductor device and fabrication method thereof. USP2003066576926.
  120. Yamazaki, Shunpei. Semiconductor device and manufacturing method thereof. USP2009087573069.
  121. Yamazaki, Shunpei. Semiconductor device and manufacturing method thereof. USP2010127858987.
  122. Yamazaki, Shunpei. Semiconductor device and manufacturing method thereof. USP2004066753257.
  123. Yamazaki, Shunpei. Semiconductor device and manufacturing method thereof. USP2003036534826.
  124. Yamazaki, Shunpei. Semiconductor device and manufacturing method thereof. USP2012018097884.
  125. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun. Semiconductor device and manufacturing method thereof. USP2014038664660.
  126. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun. Semiconductor device and manufacturing method thereof. USP2005106952020.
  127. Yamazaki, Shunpei; Kuwabara, Hideaki. Semiconductor device and manufacturing method thereof. USP2004086784457.
  128. Yamazaki, Shunpei; Suzawa, Hideomi; Ono, Koji; Arai, Yasuyuki. Semiconductor device and manufacturing method thereof. USP2010067737441.
  129. Yamazaki, Shunpei; Suzawa, Hideomi; Ono, Koji; Arai, Yasuyuki. Semiconductor device and manufacturing method thereof. USP2011067968890.
  130. Yamazaki, Shunpei; Suzawa, Hideomi; Ono, Koji; Arai, Yasuyuki. Semiconductor device and manufacturing method thereof. USP2004066743649.
  131. Yamazaki, Shunpei; Suzawa, Hideomi; Ono, Koji; Arai, Yasuyuki. Semiconductor device and manufacturing method thereof. USP2003046541294.
  132. Yamazaki, Shunpei; Suzawa, Hideomi; Ono, Koji; Arai, Yasuyuki. Semiconductor device and manufacturing method thereof. USP2003126664145.
  133. Yamazaki,Shunpei. Semiconductor device and manufacturing method thereof. USP2006037015141.
  134. Yamazaki,Shunpei; Arai,Yasuyuki; Koyama,Jun. Semiconductor device and manufacturing method thereof. USP2008037348599.
  135. Yamazaki,Shunpei; Suzawa,Hideomi; Ono,Koji; Arai,Yasuyuki. Semiconductor device and manufacturing method thereof. USP2006016992328.
  136. Yamazaki,Shunpei; Suzawa,Hideomi; Ono,Koji; Arai,Yasuyuki. Semiconductor device and manufacturing method thereof. USP2008027335911.
  137. Park Chan Kwang,KRX. Semiconductor device and method for fabricating the same. USP1998065773330.
  138. Zhang Hongyong,JPX ; Ohnuma Hideto,JPX ; Yamaguchi Naoaki,JPX ; Takemura Yasuhiko,JPX. Semiconductor device and method for fabricating the same. USP2001076259120.
  139. Zhang Hongyong,JPX ; Ohnuma Hideto,JPX ; Yamaguchi Naoaki,JPX ; Takemura Yasuhiko,JPX. Semiconductor device and method for fabricating the same. USP1999105962872.
  140. Yamazaki Shunpei (Tokyo JPX) Zhang Hongyong (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX). Semiconductor device and method for forming the same. USP1996125583369.
  141. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX ; Takemura Yasuhiko,JPX. Semiconductor device and method for forming the same. USP1999085946561.
  142. Inumiya Seiji,JPX ; Hieda Katsuhiko,JPX ; Matsuda Tetsuo,JPX ; Ozawa Yoshio,JPX. Semiconductor device and method for manufacturing same. USP2001066251763.
  143. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei. Semiconductor device and method of fabricating the same. USP2009107605902.
  144. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei. Semiconductor device and method of fabricating the same. USP2003106638781.
  145. Hirakata,Yoshiharu; Goto,Yuugo; Kobayashi,Yuko; Yamazaki,Shunpei. Semiconductor device and method of fabricating the same. USP2007027173281.
  146. Yamazaki, Shunpei; Koyama, Jun. Semiconductor device and method of fabricating the same. USP2003026524895.
  147. Fujimoto, Etsuko; Murakami, Satoshi; Yamazaki, Shunpei; Eguchi, Shingo. Semiconductor device and method of manufacturing the same. USP2003096613620.
  148. Yamazaki, Shunpei; Adachi, Hiroki. Semiconductor device and method of manufacturing the same. USP2011047923779.
  149. Yamazaki, Shunpei; Adachi, Hiroki. Semiconductor device and method of manufacturing the same. USP2003096617644.
  150. Yamazaki,Shunpei; Adachi,Hiroki. Semiconductor device and method of manufacturing the same. USP2007087259427.
  151. Zhang Hongyong (Kanagawa JPX) Koyama Jun (Kanagawa JPX) Teramoto Satoshi (Kanagawa JPX). Semiconductor device and process for fabricating the same. USP1997115686328.
  152. Takemura Yasuhiko (Kanagawa JPX). Semiconductor device having a crystallized silicon thin film in which the crystallization direction is oriented either v. USP1997045616506.
  153. Yamazaki, Shunpei; Koyama, Jun. Semiconductor device having a gate wiring comprising laminated wirings. USP2005086936844.
  154. Miyazaki Minoru (Kanagawa JPX) Murakami Akane (Kanagawa JPX) Cui Baochun (Kanagawa JPX) Yamamoto Mutsuo (Kanagawa JPX). Semiconductor device having a lead including aluminum. USP1997045623157.
  155. Pfiester James R. (Austin TX). Semiconductor device having an MOS transistor with overlapped and elevated source and drain. USP1993015182619.
  156. Yamazaki, Shunpei; Tanaka, Yukio; Koyama, Jun; Osame, Mitsuaki; Murakami, Satoshi; Ohnuma, Hideto; Fujimoto, Etsuko; Kitakado, Hidehito. Semiconductor device having at least a pixel unit and a driver circuit unit over a same substrate. USP2003066576924.
  157. Ohtani,Hisashi. Semiconductor device having display device. USP2008087414288.
  158. Ohtani Hisashi,JPX ; Yamazaki Shunpei,JPX ; Itoh Masataka,JPX. Semiconductor device having multilayered gate electrode and impurity regions overlapping therewith. USP2001076259138.
  159. Shunpei Yamazaki JP; Yasuyuki Arai JP. Semiconductor device having single crystal grains with hydrogen and tapered gate insulation layer. USP2002126492659.
  160. Suzawa Hideomi,JPX. Semiconductor device including active matrix circuit. USP1999125998841.
  161. Suzawa Hideomi,JPX. Semiconductor device including active matrix circuit. USP1998015712495.
  162. Suzawa Hideomi,JPX. Semiconductor device including active matrix circuit. USP1999015856689.
  163. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito. Semiconductor display device and method of manufacturing therefor. USP2004086777716.
  164. Ohtani Hisashi,JPX. Semiconductor integrated circuit and fabrication method thereof. USP2001116316787.
  165. Ohtani, Hisashi. Semiconductor integrated circuit and fabrication method thereof. USP2005126979841.
  166. Ohtani, Hisashi. Semiconductor integrated circuit and fabrication method thereof. USP2003126657228.
  167. Inoue Shunsuke (Yokohama JPX) Koizumi Toru (Yokohama JPX) Miyawaki Mamoru (Tokyo JPX) Sugawa Shigetoshi (Atsugi JPX). Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness. USP1995055412240.
  168. Vu Duy-Phach (Taunton MA) Dingle Brenda D. (Mansfield MA) Dingle Jason E. (Mansfield MA) Cheong Ngwe (Boston MA). Single crystal silicon tiles for liquid crystal display panels including light shielding layers. USP1994125377031.
  169. Crawford Gregory P. ; Ho Jackson. Smart spacers for active matrix liquid crystal projection light valves. USP1999115978063.
  170. Katayama Shigenori,JPX ; Yasukawa Masahiro,JPX. Substrate for electro-optical apparatus, electro-optical apparatus, method for driving electro-optical apparatus, electronic device and projection display device. USP2000056066860.
  171. Inoue Yasuo (Hyogo JPX) Nishimura Tadashi (Hyogo JPX) Ashida Motoi (Hyogo JPX). Thin film field effect element having an LDD structure. USP1994025283455.
  172. Takemura Yasuhiko (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Konuma Toshimitsu (Kanagawa JPX). Thin film semiconductor device with gate metal oxide and sidewall spacer. USP1996115576556.
  173. Konuma Toshimitsu (Kanagawa JPX) Hiroki Masaaki (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Yamamoto Mutsuo (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX). Thin film semiconductor integrated circuit and method of fabricating the same. USP1997035608251.
  174. Wakai Haruo (Fussa JPX) Yamamura Nobuyuki (Hachioji JPX) Sato Syunichi (Kawagoe JPX) Kanbara Minoru (Hachioji JPX). Thin film transistor array. USP1991035003356.
  175. Shunpei Yamazaki JP. Thin film transistor having lightly doped regions. USP2002066399988.
  176. Yamamoto Hideaki (Tukorozawa JPX) Matsumaru Haruo (Tokyo JPX) Tanaka Yasuo (Koganei JPX) Tsutsui Ken (Tokyo JPX) Tsukada Toshihisa (Musashino JPX) Shirahashi Kazuo (Mobara JPX) Sasano Akira (Tokyo JP. Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display eq. USP1997095672523.
  177. Furuta Mamoru,JPX. Thin film transistor, manufacturing method therefor and liquid crystal display unit using the same. USP2000036034748.
  178. Jung Byung-Hoo,KRX ; Jin Yong-Suk,KRX ; Lee Joo-Hyung,KRX ; Hwang Chang-Won,KRX. Thin film transistor-liquid crystal display and a manufacturing method thereof. USP1999015858820.
  179. Kawasaki Ritsuko,JPX ; Kitakado Hidehito,JPX ; Kasahara Kenji,JPX ; Yamazaki Shunpei,JPX. Thin film transistors having ldd regions. USP2001086281552.
  180. Yen Ting-Pwu (Fremont CA). Transistor fabrication methods using overlapping masks. USP1994095348897.
  181. Takayama, Toru; Sato, Keiji; Yamazaki, Shunpei. Wiring material semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof. USP2003126661096.
  182. Takayama, Toru; Sato, Keiji; Yamazaki, Shunpei. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof. USP2010107816191.
  183. Takayama, Toru; Sato, Keiji; Yamazaki, Shunpei. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof. USP2011037906429.
  184. Takayama,Toru; Sato,Keiji; Yamazaki,Shunpei. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof. USP2007077245018.
  185. Takayama,Toru; Sato,Keiji; Yamazaki,Shunpei. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof. USP2007067226822.