|국가/구분||United States(US) Patent 등록|
|국제특허분류(IPC7판)||H01L-029/78 H01L-027/12 H01L-029/66 G02F-001/1333 G02F-001/1339 G02F-001/1362 G02F-001/1368 H01L-029/786 G02F-001/1345|
|발명자 / 주소|
|출원인 / 주소|
|대리인 / 주소||
|인용정보||피인용 횟수 : 1 인용 특허 : 185|
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.
1. A semiconductor device comprising: a first substrate;a second substrate facing to the first substrate;a shading film comprising Ti, Cr, or Al over the second substrate, the shading film being located between the first substrate and the second substrate;a first transistor over the first substrate;a second transistor over the first substrate;a first spacer overlapping with a semiconductor layer of the first transistor;a second spacer a size of which is different with a size of the first spacer; the second spacer overlapping with a semiconductor layer of...