Thermal management system containing an integrated graphene film for electronic devices
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C01B-031/04
G06F-001/20
H01L-023/373
C04B-035/52
C04B-035/532
C04B-035/622
B82Y-030/00
B82Y-040/00
출원번호
US-0506265
(2012-04-09)
등록번호
US-9360905
(2016-06-07)
발명자
/ 주소
Zhamu, Aruna
Wang, Mingchao
Xiong, Wei
Jang, Bor Z.
출원인 / 주소
Nanotek Instruments, Inc.
인용정보
피인용 횟수 :
3인용 특허 :
8
초록▼
Disclosed is a graphene-based heat dissipation system for an electronic device, comprising: (a) an electronic device comprising a heat source, wherein the heat source transmits heat to a second component or an external surface of the electronic device; (b) a heat-conducting layer comprising two majo
Disclosed is a graphene-based heat dissipation system for an electronic device, comprising: (a) an electronic device comprising a heat source, wherein the heat source transmits heat to a second component or an external surface of the electronic device; (b) a heat-conducting layer comprising two major surfaces, the heat-conducting layer being positioned such that one of its major surfaces is in operative contact with the heat source such that it is interposed between the heat source and the second component or the external surface of the electronic device; wherein the heat-conducting layer comprises at least one sheet of integrated graphene film which thermally shields the second component or the external surface of the electronic device from heat generated by the heat source.
대표청구항▼
1. A graphene-based heat dissipation system for an electronic device, comprising: (a) an electronic device comprising a heat source, wherein the heat source transmits heat to a second component or an external surface of the electronic device;(b) a heat-conducting layer comprising two major surfaces,
1. A graphene-based heat dissipation system for an electronic device, comprising: (a) an electronic device comprising a heat source, wherein the heat source transmits heat to a second component or an external surface of the electronic device;(b) a heat-conducting layer comprising two major surfaces, the heat-conducting layer being positioned such that one of its major surfaces is in operative contact with the heat source such that it is interposed between the heat source and the second component or the external surface of the electronic device;wherein the heat-conducting layer consists of a graphene material which is made from one or more sheets of integrated graphene film which thermally shields the second component or the external surface of the electronic device from heat generated by the heat source, wherein said integrated graphene film is composed of chemically merged graphene oxide gel molecules that are merged in an edge-to-edge manner or graphene oxide gel-bonded nano graphene platelets (NGPs) and exhibits a thermal conductivity of at least 600 W/mK, and said integrated graphene film has at least one of the following features:i) having an oxygen content of at least 0.1% by weight, but less than 10% by weight;ii) having a single grain, a single crystal, or few grains that has no or few sheet-to-sheet grain boundaries per layer;iii) having an electrical conductivity greater than 2,000 S/cm, a physical density greater than 2.0 g/cm3, or a tensile strength greater than 40 MPa. 2. The system of claim 1, wherein said integrated graphene film is a graphene film formed from a graphene oxide gel or a graphene composite film formed of graphene oxide gel-bonded nano graphene platelets (NGPs) through a heat treatment conducted at a temperature from 100° C. to 3,200° C. that allows individual graphene oxide molecules or graphene oxide sheets to merge with one another in an edge-to-edge manner for forming an integrated graphene film. 3. The system of claim 1, wherein the electronic device further comprises a heat dissipation device positioned in a location not directly adjacent to the heat source and wherein one of the major surfaces of the heat-conducting layer is in operative contact with the heat dissipation device. 4. The system of claim 3, wherein the heat dissipation device comprises a heat sink, a heat pipe, a heat plate, or a combination thereof. 5. The system of claim 1, wherein the integrated graphene film has an in-plane thermal conductivity of at least 800 W/mK. 6. The system of claim 1, wherein the integrated graphene film has an in-plane thermal conductivity of at least 1,000 W/mK. 7. The system of claim 1, wherein the integrated graphene film has an in-plane thermal conductivity of at least 1,500 W/mK. 8. The system of claim 1, wherein the integrated graphene film further comprises a protective coating applied thereon. 9. The system of claim 1, wherein said integrated graphene film is a graphene composite film composed of nano graphene platelets (NGPs) bonded by a graphene oxide binder, wherein said NGPs contain single-layer graphene or multi-layer graphene sheets having a thickness from 0.335 nm to 100 nm, and said NGPs occupy a weight fraction of 1% to 99.9% of the total composite weight; and said graphene oxide binder, having an oxygen content of 0.1%-40% by weight based on the total graphene oxide weight, occupies a weight fraction of 0.1% to 99% of the total composite weight, and wherein said composite forms a thin film with a thickness no greater than 1 mm and no less than 1 μm. 10. The system of claim 1, wherein said integrated graphene film has a thickness less than 100 μm. 11. The system of claim 1, wherein said integrated graphene film has a thickness greater than 10 μm, but less than 100 μm. 12. The system of claim 9, wherein said multi-layer graphene sheets have a thickness of 6.7 nm to 20 nm or said composite thin film has a thickness not greater than 50 μm. 13. The system of claim 9, wherein said nano graphene platelets are pristine graphene containing no oxygen. 14. The system of claim 9, wherein said nano graphene platelets are pristine graphene containing no oxygen and said pristine graphene is obtained from an oxidation-free procedure selected from direct ultrasonication, supercritical fluid intercalation, or alkali metal intercalation. 15. The system of claim 9 wherein said graphene oxide binder has an oxygen content of 1-10% by weight based on the total graphene oxide weight which is measured after said graphene composite film composition is made. 16. The system of claim 9 wherein said graphene oxide binder occupies a weight fraction of 1% to 40% of the total composite film weight. 17. The system of claim 9 wherein said graphene oxide is obtained from a graphene oxide gel, which gel is composed of graphene oxide molecules dispersed in an acidic medium having a pH value of no higher than 5 and said graphene oxide molecules have an oxygen content no less than 20% by weight while in a gel state. 18. The system of claim 9 wherein said graphene oxide is obtained from a graphene oxide gel, which gel is obtained by immersing a graphitic material in a powder or fibrous form in an oxidizing liquid medium in a reaction vessel at a reaction temperature for a length of time sufficient to obtain a graphene oxide gel composed of graphene oxide molecules dispersed in the liquid medium and said graphene oxide molecules have an oxygen content no less than 20% by weight and a molecular weight less than 43,000 g/mole while in a gel state. 19. The system of claim 18 wherein said graphene oxide molecules have a molecular weight less than 4,000 g/mole. 20. The system of claim 18 wherein said graphene oxide molecules have a molecular weight between 200 g/mole and 4,000 g/mole. 21. The system of claim 18 wherein said graphene composite is obtained by mixing said NGPs in said graphene oxide gel to form a NGP-graphene oxide mixture suspension, making said suspension into a thin film form, and removing a residual liquid from said mixture suspension. 22. The system of claim 18 wherein said graphene composite is obtained by mixing said NGPs in said graphene oxide gel to form a NGP-graphene oxide mixture suspension, making said suspension into a thin film form, removing a residual liquid from said mixture suspension to form a solid mixture, and subjecting said solid mixture to a re-graphitization treatment at a temperature in the range from 100° C. to 3,200° C. 23. The system of claim 22 wherein said re-graphitization temperature is in the range from 300° C. to 1,500° C. 24. The system of claim 22 wherein said re-graphitization temperature is in the range from 100° C. and 1,000° C. 25. The system of claim 22 wherein said thin film composition forms into a unitary structure after said re-graphitization treatment. 26. The system of claim 18 wherein said graphitic material is selected from natural graphite, artificial graphite, meso-phase carbon, meso-phase pitch, meso-carbon micro-bead, soft carbon, hard carbon, coke, carbon fiber, carbon nano-fiber, carbon nano-tube, or a combination thereof. 27. The system of claim 9 wherein said NGPs are produced from a graphitic material selected from natural graphite, artificial graphite, meso-phase carbon, meso-phase pitch, meso-carbon micro-bead, soft carbon, hard carbon, coke, carbon fiber, carbon nano-fiber, carbon nano-tube, or a combination thereof. 28. The system of claim 9 wherein said integrated graphene film has an electrical conductivity greater than 3000 S/cm. 29. The system of claim 9 wherein said integrated graphene film has an electrical conductivity greater than 3000 S/cm and a thermal conductivity greater than 1,000 Wm−1K−1. 30. The system of claim 9 wherein said integrated graphene film has an electrical conductivity greater than 1,500 S/cm, a thermal conductivity greater than 600 Wm−1K−1, a physical density greater than 1.4 g/cm3, and a tensile strength greater than 10 MPa. 31. The system of claim 9 wherein said integrated graphene film has an electrical conductivity greater than 2,000 S/cm, a thermal conductivity greater than 800 Wm−1K−1, a physical density greater than 1.8 g/cm3, and a tensile strength greater than 40 MPa. 32. The system of claim 9 wherein said integrated graphene film has an electrical conductivity greater than 3,000 S/cm, a thermal conductivity greater than 1,500 Wm−1K−1, a physical density greater than 2.0 g/cm3, and a tensile strength greater than 40 MPa. 33. The system of claim 1 wherein said integrated graphene film is a film produced from a graphene oxide gel, which is prepared by immersing a graphitic material in a powder or fibrous form in an oxidizing liquid to form an optically opaque suspension in a reaction vessel at a reaction temperature for a length of time sufficient to obtain a graphene oxide gel that is optically transparent or translucent, wherein said graphene oxide gel is composed of graphene oxide molecules dispersed in an acidic medium having a pH value of no higher than 5 and said graphene oxide molecules have an oxygen content no less than 20% by weight. 34. The system of claim 1 wherein said integrated graphene film is a film produced from a graphene oxide gel, which is prepared by immersing a graphitic material in an oxidizing agent to form an optically opaque suspension and allowing an oxidizing reaction to proceed until an optically transparent or translucent solution is formed, and wherein said graphitic material is selected from natural graphite, artificial graphite, meso-phase carbon, meso-phase pitch, meso-carbon micro-bead, soft carbon, hard carbon, coke, carbon fiber, carbon nano-fiber, carbon nano-tube, or a combination thereof. 35. The system of claim 1, wherein a thermal transfer material is positioned between the heat-conducting layer and the heat source. 36. The system of claim 35, wherein the thermal transfer material comprises a metal or a thermal interface material. 37. The system of claim 1, wherein the electronic device is a portable computing device containing a central processing unit (CPU) or a battery as a heat source.
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이 특허에 인용된 특허 (8)
Kung, Harold H.; Lee, Jung K., Electrode material comprising graphene-composite materials in a graphite network.
de Heer, Walt A.; Wu, Xiaosong; Sprinkle, Michael; Berger, Claire, Method and apparatus for producing graphene oxide layers on an insulating substrate.
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