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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0566291 (2014-12-10) |
등록번호 | US-9368364 (2016-06-14) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 57 인용 특허 : 593 |
A tunable plasma etch process includes generating a plasma in a controlled flow of a source gas including NH3 and NF3 to form a stream of plasma products, controlling a flow of un-activated NH3 that is added to the stream of plasma products to form an etch gas stream; and controlling pressure of the
A tunable plasma etch process includes generating a plasma in a controlled flow of a source gas including NH3 and NF3 to form a stream of plasma products, controlling a flow of un-activated NH3 that is added to the stream of plasma products to form an etch gas stream; and controlling pressure of the etch gas stream by adjusting at least one of the controlled flow of the source gas and the flow of un-activated NH3 until the pressure is within a tolerance of a desired pressure. An etch rate of at least one of polysilicon and silicon dioxide by the etch gas stream is adjustable by varying a ratio of the controlled flow of the source gas to the flow of un-activated NH3.
1. A tunable plasma etch process, comprising: generating a plasma in a controlled flow of a source gas including NH3 and NF3 to form a stream of plasma products;controlling a flow of un-activated NH3 that is added to the stream of plasma products to form an etch gas stream; andcontrolling pressure o
1. A tunable plasma etch process, comprising: generating a plasma in a controlled flow of a source gas including NH3 and NF3 to form a stream of plasma products;controlling a flow of un-activated NH3 that is added to the stream of plasma products to form an etch gas stream; andcontrolling pressure of the etch gas stream by adjusting at least one of the controlled flow of the source gas and the flow of un-activated NH3 until the pressure is within a tolerance of a desired pressure;wherein an etch rate of at least one of polysilicon and silicon dioxide by the etch gas stream is adjustable by varying a ratio of the controlled flow of the source gas to the flow of un-activated NH3. 2. The tunable plasma etch process of claim 1, wherein the etch rates of polysilicon and silicon dioxide by the etch gas stream are adjustable at least across a range of: 20:1 selectivity of the polysilicon etch rate over the silicon dioxide etch rate, to2:1 selectivity of the polysilicon etch rate over the silicon dioxide etch rate. 3. The tunable plasma etch process of claim 1, wherein adjusting the ratio of the controlled flow of the source gas to the flow of un-activated NH3, from 10:1 to 5:1 reduces the selectivity of the polysilicon etch rate over the silicon dioxide etch rate from 20:1 to 2:1. 4. The tunable plasma etch process of claim 1, wherein decreasing the ratio of the controlled flow of the source gas to the flow of un-activated NH3 reduces a concentration of at least one of F and H radicals in the etch gas stream. 5. The tunable plasma etch process of claim 1, wherein a ratio of NF3 to NH3 in the source gas is greater than one. 6. The tunable plasma etch process of claim 1, wherein generating the plasma comprises generating a capacitively coupled plasma. 7. The tunable plasma etch process of claim 1, wherein the pressure is controllable at least across a range of 0.5 Torr to 10 Torr. 8. The tunable plasma etch process of claim 7, wherein the ratio of the controlled flow of the source gas to the flow of un-activated NH3 is 5:1, the pressure is controlled to 6 Torr and the polysilicon and silicon dioxide etch rates are such that an etch selectivity of the tunable plasma etch process is about 3:1, silicon dioxide over poly. 9. The tunable plasma etch process of claim 1, further comprising adding oxygen to the source gas, prior to generating the plasma. 10. The tunable plasma etch process of claim 1, further comprising adding one of helium and argon to the source gas, prior to generating the plasma. 11. The tunable plasma etch process of claim 1, further comprising controlling a temperature of a workpiece on which the etch rates of the at least one of polysilicon and silicon dioxide are adjusted. 12. The tunable plasma etch process of claim 11, further comprising controlling the temperature of the workpiece within a range of 100 C to 125 C.
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