Semiconductor light-receiving device and semiconductor light-receiving device array
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-031/00
H01L-031/0232
H01L-031/0203
H01L-031/0304
H01L-031/0352
H01L-027/142
출원번호
US-0737310
(2015-06-11)
등록번호
US-9373733
(2016-06-21)
우선권정보
JP-2014-123534 (2014-06-16)
발명자
/ 주소
Iguchi, Yasuhiro
출원인 / 주소
SUMITOMO ELECTRIC INDUSTRIES, LTD.
대리인 / 주소
Smith, Gambrell & Russell, LLP.
인용정보
피인용 횟수 :
0인용 특허 :
3
초록▼
A semiconductor light-receiving device includes a substrate having a principal surface including first and second areas; a post disposed on the first area, the post including a semiconductor mesa; and a resin layer disposed on the second area in contact with a side surface of the post. The resin lay
A semiconductor light-receiving device includes a substrate having a principal surface including first and second areas; a post disposed on the first area, the post including a semiconductor mesa; and a resin layer disposed on the second area in contact with a side surface of the post. The resin layer has, on a ray extending from a first point within the first area through a second point within the second area, a first thickness and a second thickness respectively at a third point and a fourth point that are located within the second area at different distances from the first point. The distance from the first point to the fourth point is larger than the distance from the first point to the third point. The first thickness is larger than the second thickness. The resin layer has a surface that monotonically changes from the first thickness to the second thickness.
대표청구항▼
1. A semiconductor light-receiving device comprising: a substrate having a principal surface and a back surface opposite the principle surface, the principle surface including a first area and a second area surrounding the first area, and the back surface providing an incident surface for signal lig
1. A semiconductor light-receiving device comprising: a substrate having a principal surface and a back surface opposite the principle surface, the principle surface including a first area and a second area surrounding the first area, and the back surface providing an incident surface for signal light entering the semiconductor light-receiving device;a post disposed on the first area of the substrate, the post including a semiconductor mesa having a side surface and including an optical absorption layer; anda resin layer disposed on the second area of the substrate in contact with a side surface of the post, the resin layer having a surface configured to reflect signal light passing into the resin layer from the incident surface to the side surface of the mesa. 2. The semiconductor light-receiving device according to claim 1, further comprising a metal layer formed on the surface of the resin layer. 3. The semiconductor light-receiving device according to claim 1, wherein the resin layer contains a material that transmits light of wavelengths in a range of 0.7 μm to 3 μm. 4. The semiconductor light-receiving device according to claim 1, wherein the resin layer contains a fluororesin. 5. The semiconductor light-receiving device according to claim 1, wherein the post includes an inorganic insulating film formed on the side surface of the semiconductor mesa. 6. The semiconductor light-receiving device according to claim 1, wherein the optical absorption layer includes an InGaAs/GaAsSb type-II multi quantum well structure or an InGaAs layer. 7. The semiconductor light-receiving device according to claim 1, wherein the surface of the resin layer configured to reflect signal light has a height which is substantially the same as a height of the mesa. 8. The semiconductor light-receiving device according to claim 1, wherein the resin layer has on a ray extending from a first point within the first area through a second point within the second area, a first thickness and a second thickness respectively at a third point and a fourth point that are located on the ray within the second area at different distances from the first point,the distance from the first point to the fourth point is larger than the distance from the first point to the third point,the first thickness at the third point is larger than the second thickness at the fourth point, andthe resin layer surface configured to reflect signal light monotonically changes from the first thickness to the second thickness, in a section of the resin layer, the section being defined by a reference plane that passes through the ray and extends along an axis normal to the principal surface of the substrate. 9. The semiconductor light-receiving device according to claim 1, wherein the resin layer surface configured to reflect signal light has a shape that reflects the signal light entering the resin layer through the substrate incident surface to the side surface of the semiconductor mesa. 10. The semiconductor light-receiving device according to claim 9, wherein the shape is a dome shape. 11. A semiconductor light-receiving device array comprising: a substrate having a principal surface and back surface opposite the principle surface;a plurality of semiconductor light-receiving devices arranged two-dimensionally on the principal surface of the substrate, the back surface of the substrate providing an incident surface for signal light entering each semiconductor light-receiving device; anda device isolation region disposed among the semiconductor light-receiving devices, the device isolation region separating the semiconductor light-receiving devices from each other, whereineach of the semiconductor light-receiving devices includes: first and second areas in the principal surface of the substrate with the second area surrounding the first area;a post disposed on the first area, the post including a semiconductor mesa having a side surface and including an optical absorption layer; anda resin layer disposed on the second area in contact with the post, the resin layer having a surface configured to reflect signal light passing into the resin layer from the incident surface to the side surface of the semiconductor mesa. 12. The semiconductor light-receiving device array according to claim 11, wherein the resin layer surface configured to reflect signal light has a height which is substantially the same as a height of the mesa. 13. The semiconductor light-receiving device array according to claim 11, further comprising a metal layer formed on the surface of the resin layer. 14. The semiconductor light-receiving device array according to claim 11, wherein the resin layer contains a material that transmits light of wavelengths in a range of 0.7 μm to 3 μm. 15. The semiconductor light-receiving device array according to claim 11, wherein the resin layer contains a fluororesin. 16. The semiconductor light-receiving device array according to claim 11, wherein the post includes an inorganic insulating film formed on the side surface of the semiconductor mesa. 17. The semiconductor light-receiving device array according to claim 11, wherein the optical absorption layer includes an InGaAs/GaAsSb type-II multi quantum well structure or an InGaAs layer. 18. The semiconductor light-receiving device array according to claim 11, wherein, in at least one of the semiconductor light-receiving devices, the resin layer has, on a ray extending from a first point within the first area through a second point within the second area, a first thickness and a second thickness respectively at a third point and a fourth point that are located on the ray within the second area at different distances from the first point,the distance from the first point to the fourth point is larger than the distance from the first point to the third point,the first thickness at the third point is larger than the second thickness at the fourth point, andthe resin layer surface configured to reflect signal light monotonically changes from the first thickness to the second thickness, in a section of the resin layer, the section being defined by a reference plane that passes through the ray and extends along an axis normal to the principal surface of the substrate. 19. The semiconductor light-receiving device array according to claim 11, wherein the surface of the resin layer configured to reflect signal light has a shape that reflects the signal light entering the resin layer through the substrate incident surface to the side surface of the semiconductor mesa. 20. The semiconductor light-receiving device array according to claim 19, wherein the shape is a dome shape.
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