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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0571126 (2014-12-15) |
등록번호 | US-9384987 (2016-07-05) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 36 인용 특허 : 588 |
Embodiments related to metal oxide protective layers formed on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor are provided. In one example, a method for forming a metal oxide protective layer is provided. The example meth
Embodiments related to metal oxide protective layers formed on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor are provided. In one example, a method for forming a metal oxide protective layer is provided. The example method includes forming a metal-including active species on the halogen-sensitive metal-including layer, the metal-including active species being derived from a non-halogenated metal oxide precursor. The example method also includes reacting an oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer.
1. A method of forming a metal oxide protective layer on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor, the method comprising the steps of: providing a halogen-sensitive metal-including layer present on a substrate;formi
1. A method of forming a metal oxide protective layer on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor, the method comprising the steps of: providing a halogen-sensitive metal-including layer present on a substrate;forming a metal oxide protective layer overlying the halogen-sensitive metal-including layer, the metal oxide protective layer derived from a non-halogenated metal oxide precursor; andforming a high-k dielectric metal-including film overlaying the metal oxide protective layer by exposing the metal oxide protective layer to a halogen-including metal compound. 2. The method of claim 1, wherein the step of forming a metal oxide protective layer comprises using at least a portion of a surface of the halogen-sensitive metal-including layer. 3. The method of claim 1, wherein the step of forming a metal oxide protective layer comprises reacting an oxygen-containing reactant with an active species of the metal-including layer. 4. The method of claim 1, wherein the metal oxide protective layer is a barrier layer. 5. The method of claim 1, wherein the metal oxide protective layer is a buffer layer. 6. The method of claim 1, where the halogen-sensitive metal-including layer is sensitive to chlorine and where the non-halogenated metal oxide precursor comprises a non-chlorinated metal oxide precursor. 7. The method of claim 1, wherein the halogen-sensitive metal-including layer comprises an alkaline earth metal-including oxide. 8. The method of claim 1, wherein the halogen-sensitive metal-including layer comprise one or more of SrTixOy, BaTixOy, SrO, and SrxBa(1-x). 9. The method of claim 1, wherein the metal oxide protective layer excludes alkaline earth metals. 10. The method of claim 1, wherein the metal oxide protective layer comprises titanium oxide. 11. The method of claim 1, wherein the metal oxide protective layer comprises aluminum oxide. 12. A method of fabricating a semiconductor device, the method comprising the steps of: forming a halogen-sensitive high-K dielectric material on a substrate;forming a metal oxide protective layer on the halogen-sensitive high-K dielectric material; andforming a high-k dielectric metal-including film overlying the metal oxide protective layer by exposing the metal oxide protective layer to a halogen-including metal compound. 13. The method of claim 12, wherein a pressure during the step of forming a metal oxide protective layer is ranges from 0.1 Torr to 10 Torr. 14. The method of claim 12, wherein a temperature during the step of forming a metal oxide protective layer is ranges from 100° C. to 400° C. 15. The method of claim 12, wherein the step of forming a metal oxide protective layer comprises using a precursor selected from the group consisting of: titanium tetraethoxide (Ti(OC2H5)4), titanium tetramethoxide (Ti(OCH3)4), titanium tetraisopropoxide (Ti(i-OC3H7)4, and titanium tetra-n-butoxide (Ti(n-OC4H9)4)); transition metal amino complexes (e.g., tetrakis(dimethylamido)titanium (Ti(N(CH3)2)4) and tetrakis(diethylamido)titanium (Ti(N(C2H5)2)4)); transition metal silanes (e.g., tetrakis(trimethylsilylmethyl)titanium (Ti((CH3)SiCH2)4)); and transition metal cyclopentadiene complexes (e.g., (η8-cyclooctatetraene)(η5-cyclopentadienyetitanium (C13H13Ti), di-1,3-cyclopentadien-1-yl [bis(N-methylmethanaminato)]titanium (C14H22N2Ti), and dicyclopentadienyl titanium diazide (C10H10N6Ti). 16. The method of claim 12, wherein the step of forming a metal oxide protective layer comprises using a precursor selected from the group consisting of: aluminum alkyl complexes, aluminum alkoxides, aluminum silanes, aluminum amino complexes, and aluminum cyclopentadiene complexes. 17. A method of forming a metal oxide protective layer on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor, the method comprising the steps of: providing a halogen-sensitive metal-including layer present on a substrate;using atomic layer deposition, forming a metal oxide protective layer overlying the halogen-sensitive metal-including layer, the metal oxide protective layer derived from a non-halogenated metal oxide precursor; andforming a high-k dielectric metal-including film comprising residual halogen atoms overlying the metal oxide protective layer. 18. The method of claim 17, wherein the film comprising residual halogen atoms comprises a transition metal compound. 19. The method of claim 17, wherein the halogen-sensitive high-K dielectric material comprises an alkaline earth metal-including metal. 20. The method of claim 17, wherein the metal oxide protective layer has a thickness of 20 Å or less.
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