Method for making an infrared detection device
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IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G01J-005/20
G01J-005/10
H01L-031/18
G01J-005/02
출원번호
US-0107106
(2013-12-16)
등록번호
US-9389125
(2016-07-12)
우선권정보
FR-12 62153 (2012-12-17)
발명자
/ 주소
Yon, Jean-Jacques
Dumont, Geoffroy
Imperinetti, Pierre
Pocas, Stephane
출원인 / 주소
Commissariat à l'énergie atomique et aux énergies alternatives
대리인 / 주소
Oblon, McClelland, Maier & Neustadt, L.L.P.
인용정보
피인용 횟수 :
0인용 특허 :
9
초록▼
An infrared detection device including an infrared heat detector and a connection pad each spaced apart from an etching stop layer by a non-zero distance substantially equal relatively to each other, wherein first and second electrically conducting vias are respectively electrically connected to fir
An infrared detection device including an infrared heat detector and a connection pad each spaced apart from an etching stop layer by a non-zero distance substantially equal relatively to each other, wherein first and second electrically conducting vias are respectively electrically connected to first and second portions of a metal line of a penultimate level of electrical interconnections, and wherein an empty space formed in a first inter-metal dielectric layer surrounds the first electrically conducting via and extends under the infrared heat detector.
대표청구항▼
1. An infrared detection device comprising: an electronic readout circuit made on and/or in a first semiconducting substrate;a plurality of levels of electrical interconnections arranged on the first semiconductor substrate, comprising a penultimate level of electrical interconnections and a last le
1. An infrared detection device comprising: an electronic readout circuit made on and/or in a first semiconducting substrate;a plurality of levels of electrical interconnections arranged on the first semiconductor substrate, comprising a penultimate level of electrical interconnections and a last level of interconnections provided on the penultimate level f electrical interconnections such that penultimate level of electrical interconnections is arranged between the electronic readout circuit and a last level of electrical interconnections;an etching stop layer arranged between the penultimate level of electrical interconnections and last level of electrical interconnections, the etching stop layer capable of withstanding etching of a first inter-metal dielectric layer arranged between the etching stop layer and the last level of electrical interconnections;an infrared heat detector electrically connected to the electronic readout circuit by at least one first electrically conducting via of the last level of electrical interconnections which crosses the etching stop layer;a connection pad formed by the last level of electrical interconnections, electrically connected to the electronic readout circuit by at least one second electrically conducting via of the last level of electrical interconnections which crosses the etching stop layer, and able to be electrically contacted from the outside of the infrared detection device;wherein the infrared heat detector and the connection pad are each spaced apart from the etching stop layer by a non-zero distance substantially equal relatively to each other, wherein the first and second electrically conducting vias are respectively electrically connected to first and second portions of a metal line of a penultimate level of electrical interconnections, and wherein an empty space formed in the first inter-metal dielectric layer surrounds the first electrically conducting via and extends under the infrared heat detector. 2. The infrared detection device according to claim 1, wherein the electronic readout circuit includes a plurality of electronic devices of the MOS type made on and/or in the first semiconducting substrate, wherein the penultimate level of electrical interconnections includes third electrically conducting vias made in a second inter-metal dielectric layer and electrically connecting at least first portions of the metal line to the electronic devices of the MOS type, and wherein the etching stop layer is arranged on the second inter-me dielectric layer. 3. The infrared detection device according to claim 2, wherein the metal line, the third electrically conducting vias, and the first electrically conducting via comprise the same material which is a metal. 4. The infrared detection device according to claim 1, wherein at least one third portion of the metal line is arranged facing the infrared heat detector and is able to reflect at least one part of infrared radiation intended to be detected by the infrared heat detector. 5. The infrared detection device according to claim 4, wherein the third portion of the metal line is not covered by the etching stop layer. 6. The infrared detection device according to claim 1, wherein the infrared heat detector includes a metal-insulator-metal stack able to absorb infrared radiation intended to be detected by the infrared heat detector, and at least one portion of material the resistivity of which varies according to temperature, thermally coupled with the metal-insulator-metal stack and electrically connected to the first electrically conducting via. 7. The infrared detection device according to claim 1, wherein the infrared heat detector includes a plurality of resistive portions able to absorb infrared radiation intended to be detected by the infrared heat detector, and a plurality of material portions the resistivity of which varies according to temperature, at least one of said material portions the resistivity of which varies according to temperature being electrically connected to the first electrically conducting via. 8. The infrared detection device according to claim 1, further including at least one first electric contact arranged on the first electrically conducting via, the infrared heat detector being electrically connected to the first electrically conducting via, via said electric contact. 9. The infrared detection device according to claim 1, wherein the infrared heat detector is encapsulated in a cavity delimited by at least one encapsulation layer comprising a material transparent to infrared radiation intended to be detected by the infrared heat detector, and by the etching stop layer. 10. The infrared detection device according to claim 1, wherein the infrared heat detector is encapsulated in a cavity delimited by at least one second substrate, the etching stop layer and a metal bead securing the second substrate to the etching stop layer, the second substrate comprising at least one material transparent to infrared radiation intended to be detected by the infrared heat detector. 11. The infrared detection device according to claim 1, including a plurality of infrared heat detectors forming an array of pixels of the infrared detection device, each infrared heat detector being electrically connected to the electronic readout circuit through at least one first electrically conducting via. 12. A method for making an infrared detection device, including at least the implementation of steps for: making a plurality of levels of electrical interconnections on an electronic readout circuit which made on and/or in a first semiconducting substrate and including a last level of electrical interconnections provided on a penultimate level of electrical interconnections;depositing an etching stop layer on the penultimate level of electrical interconnections;depositing a first inter-metal dielectric layer on the etching stop layer, the first inter-metal dielectric layer comprising at least one mineral material able to be selectively etched relatively to the etching stop layer;making on the first inter-metal dielectric layer, a last level of electrical interconnections forming at least one connection pad electrically connected to the electronic readout circuit through at least one second electrically conducting via of the last level of electrical interconnections which crosses the first inter-metal dielectric layer and the etching stop layer, the connection pad being able to be electrically contacted from the outside of the infrared detection device, and at least one infrared heat detector electrically connected to the electronic readout circuit through at least one first electrically conducting via of the last level of electrical interconnections which crosses the first inter-metal dielectric layer and the etching stop layer, the first and the second electrically conducting vias being respectively electrically connected to first and second portions of a metal line of the penultimate level of electrical interconnection, and wherein the infrared heat detector and the connection pad are each spaced apart from the etching stop layer by a non-zero distance substantially equal relatively to each other;etching at least one portion of the first inter-metal dielectric layer arranged between the electronic readout circuit and the infrared heat detector, forming an empty space surrounding the first electrically conducting via and extending under the infrared heat detector. 13. The method according to claim 12 wherein the electronic readout circuit includes a plurality of electronic devices of the MOS type made on and/or in the first semiconducting substrate, and wherein the penultimate level of electrical interconnections includes third electrically conducting vias made in a second inter-metal dielectric layer and electrically connecting at least first portions of the metal line to the electronic devices of the MOS type, and wherein the etching stop layer is deposited on the second inter-metal dielectric layer. 14. The method according to claim 13, wherein the metal line, the third electrically conducting vias, and the first electrically conducting via comprise the same material which is a metal, and wherein the second inter-metal dielectric layer comprise a mineral material similar to the mineral material of the first inter-metal dielectric layer. 15. The method according to claim 12, wherein at least one third portion of the metal line is arranged facing the infrared heat detector and is able to reflect at least one part of infrared radiation intended to be detected by the infrared heat detector. 16. The method according to claim 15, further including, between the step for depositing the etching stop layer and the step for depositing the first inter-metal dielectric layer, a step for etching a portion of the etching stop layer which covers the third portion of the metal line. 17. The method according to claim 12, wherein the making of the infrared heat detector includes the making of a metal-insulator-metal stack able to absorb infrared radiation intended to be detected by the infrared heat detector, and the making of at least one material portion the resistivity of which varies according to temperature, thermally coupled with the metal-insulator-metal stack and electrically connected to the first electrically conducting via. 18. The method according to claim , wherein the making of the infrared heat detector includes the making of a plurality of resistive portions able to absorb infrared radiation intended to be detected by the infrared heat detector, and the making of a plurality of material portions for which the resistivity varies according to temperature, at least one of said material portions for which the resistivity varies according to temperature, being electrically connected to the first electrically conducting via. 19. The method according to claim 12, further including, between the step for depositing the first inter-metal dielectric layer and the step for making the infrared heat detector, the making of at least one first electric contact on the first electrically conducting via, the infrared heat detector being electrically connected to the first electrically conducting via, via said electric contact. 20. The method according to claim 12, further including between the step for making the infrared heat detector and the step for etching at least one portion of the first inter-metal dielectric layer, the implementation of steps for: depositing a sacrificial layer covering at least the infrared heat detector, the sacrificial layer comprising at least one mineral material able to be selectively etched relatively to the etching stop layer;etching at least one trench through at least the first inter-metal dielectric layer and the sacrificial layer and delimiting the at least one portion of the first inter-metal dielectric layer and at least one portion of the sacrificial layer;depositing in said trench and on the at least one portion of the sacrificial layer, at least one encapsulation layer comprising a material transparent to infrared radiation intended to be detected by the infrared heat detector;making at least one aperture through the encapsulation layer;wherein the step for etching at least one portion of the first inter-metal dielectric layer is carried out via the aperture and removes the at least one portion of the first inter-metal dielectric layer and the at least one portion of the sacrificial layer such that the infrared heat detector is encapsulated in a cavity delimited by at least the encapsulation layer and the etching stop layer,and further including after said etching step, the implementation of a step for plugging the aperture. 21. The method according to claim 12, further including, between the step for making the infrared heat detector and the step for etching at least one part of the first inter-metal dielectric layer, the implementation of a step for making at least one metal bead on the etching stop layer, through at least the first inter-metal dielectric layer and further including, after the step for etching at least one part of the first inter-metal dielectric layer, the securing of at least one second substrate to the metal bead such that the infrared heat detector is encapsulated in a cavity delimited by at least the second substrate, the etching stop layer and the metal bead, the second substrate comprising at least one material transparent to infrared radiation intended to be detected by the infrared heat detector. 22. The method according to claim 12, including the making of a plurality of infrared heat detectors forming an array of pixels of the infrared detection device, each infrared heat detector being electrically connected to the electronic readout circuit through at least one first electrically conducting via.
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이 특허에 인용된 특허 (9)
Ouvrier-Buffet Jean-Louis,FRX ; Yon Jean-Jacques,FRX, Bolometric heat detector.
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