Production of polycrystalline silicon in substantially closed-loop systems
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C01B-033/03
B01J-008/24
C01B-033/039
C01B-033/107
출원번호
US-0871205
(2013-04-26)
등록번호
US-9394180
(2016-07-19)
발명자
/ 주소
Bhusarapu, Satish
Huang, Yue
Gupta, Puneet
출원인 / 주소
SunEdison, Inc.
대리인 / 주소
Armstrong Teasdale LLP
인용정보
피인용 횟수 :
0인용 특허 :
14
초록
Production of polycrystalline silicon in a substantially closed-loop process is disclosed. The processes generally include decomposition of trichlorosilane produced from metallurgical grade silicon.
대표청구항▼
1. A substantially closed-loop process for producing polycrystalline silicon, the process comprising: introducing trichlorosilane and hydrogen to a first fluidized bed reactor to produce polycrystalline silicon and a first effluent gas comprising silicon tetrachloride, hydrogen and unreacted trichlo
1. A substantially closed-loop process for producing polycrystalline silicon, the process comprising: introducing trichlorosilane and hydrogen to a first fluidized bed reactor to produce polycrystalline silicon and a first effluent gas comprising silicon tetrachloride, hydrogen and unreacted trichlorosilane;introducing silicon and an amount of silicon tetrachloride and hydrogen from the effluent gas into a second fluidized bed reactor to produce a second effluent gas comprising trichlorosilane and unreacted hydrogen and unreacted silicon tetrachloride;contacting hydrogen chloride and silicon to produce trichlorosilane and silicon tetrachloride;introducing the trichlorosilane produced by contacting hydrogen chloride and silicon into the first fluidized bed reactor to produce polycrystalline silicon; andadding chlorine to one or more process streams as a make-up, wherein the molar ratio of chlorine added as a make-up to polycrystalline silicon product that is produced is less than about 2:1. 2. The process as set forth in claim 1 wherein the hydrogen chloride and silicon are introduced into a chlorination reactor to produce a chlorinated product gas comprising the trichlorosilane and silicon tetrachloride, the process comprising introducing the chlorinated product gas into a purification system to produce a purified trichlorosilane stream and a purified silicon tetrachloride stream, the purified trichlorosilane stream being introduced into the first fluidized bed reactor. 3. The process as set forth in claim 2 wherein the first effluent gas is introduced into a first effluent gas separator to separate hydrogen from trichlorosilane and silicon tetrachloride, the trichlorosilane and silicon tetrachloride being introduced into the chlorinated gas purification system, the purified silicon tetrachloride stream being introduced into the second fluidized bed reactor. 4. The process as set forth in claim 3 wherein the first effluent gas separator is a vapor-liquid separator. 5. The process as set forth in claim 2 wherein the second effluent gas is introduced into a second effluent gas separator system to separate trichlorosilane and unreacted silicon tetrachloride from hydrogen, the trichlorosilane and unreacted silicon tetrachloride being introduced into the chlorinated gas purification system. 6. The process as set forth in claim 5 wherein the second effluent gas separator is a vapor-liquid separator. 7. The process as set forth in claim 5 wherein the second effluent gas comprises hydrogen and hydrogen chloride, wherein trichlorosilane and unreacted silicon tetrachloride are separated from hydrogen and hydrogen chloride, the hydrogen and hydrogen chloride being introduced into a separation system to separate hydrogen and hydrogen chloride, the separated hydrogen chloride being introduced into the chlorination reactor, the separated hydrogen being introduced into at least one of the first fluidized bed reactor and the second fluidized bed reactor. 8. The process as set forth in claim 2 wherein the chlorinated product gas comprises trichlorosilane, silicon tetrachloride, hydrogen and unreacted hydrogen chloride and wherein the purification system comprises a chlorinated gas separator, a silicon tetrachloride separator and a trichlorosilane purifier, wherein: the chlorinated product gas is introduced into the chlorinated gas separator to separate trichlorosilane and silicon tetrachloride from hydrogen and unreacted hydrogen chloride;the separated trichlorosilane and silicon tetrachloride are introduced into the silicon tetrachloride separator to separate silicon tetrachloride from trichlorosilane and produce a trichlorosilane feed gas;the trichlorosilane feed gas is introduced into a trichlorosilane purifier to remove impurities from the feed gas; andthe purified trichlorosilane feed gas is introduced into the first fluidized bed reactor to produce polycrystalline silicon. 9. The process as set forth in claim 8 wherein the chlorinated gas separator is a vapor-liquid separator, the silicon tetrachloride separator is a distillation column and the trichlorosilane purifier is a distillation column. 10. The process as set forth in claim 8 wherein the separated hydrogen and unreacted hydrogen chloride are introduced into a separation system to separate hydrogen and hydrogen chloride, the separated hydrogen chloride being introduced into the chlorination reactor, the separated hydrogen being introduced into at least one of the first fluidized bed reactor and the second fluidized bed reactor. 11. The process as set forth in claim 7 wherein the separation system comprises a hydrogen separator, a hydrogen purifier and a hydrogen chloride purifier, wherein: the hydrogen and hydrogen chloride are introduced into the hydrogen separator to produce a hydrogen recycle gas and a hydrogen chloride recycle gas;the hydrogen recycle gas is introduced into a hydrogen purifier to remove impurities from the hydrogen recycle gas;the hydrogen chloride recycle gas is introduced into a hydrogen chloride purifier to remove impurities from the hydrogen chloride gas; andthe purified hydrogen recycle gas is introduced into at least one of the first fluidized bed reactor and the second fluidized bed reactor; andthe purified hydrogen chloride recycle gas is introduced into the chlorination reactor. 12. The process as set forth in claim 11 wherein the hydrogen separator is a bubbler, the hydrogen purifier is an adsorber and the hydrogen chloride purifier is a distillation column. 13. The process as set forth in claim 1 comprising adding hydrogen to one or more process streams as a make-up, wherein the molar ratio of hydrogen added as a make-up to polycrystalline silicon product that is produced is less than about 1:1. 14. The process as set forth in claim 1 wherein no hydrogen is added to the process as a make-up stream. 15. A substantially closed-loop process for producing polycrystalline silicon, the process comprising: introducing trichlorosilane and hydrogen to a first fluidized bed reactor to produce polycrystalline silicon and a first effluent gas comprising silicon tetrachloride, hydrogen and unreacted trichlorosilane;introducing the first effluent gas into a first effluent gas separator to separate hydrogen from trichlorosilane and silicon tetrachloride, the trichlorosilane and silicon tetrachloride being introduced into a chlorinated gas purification system to produce a purified trichlorosilane stream and a purified silicon tetrachloride stream;introducing silicon, an amount of silicon tetrachloride from the purified silicon tetrachlorinated product stream and hydrogen from the first effluent gas into a second fluidized bed reactor to produce a second effluent gas comprising trichlorosilane, hydrogen chloride, unreacted hydrogen and unreacted silicon tetrachloride;introducing the second effluent gas into a second effluent gas separator system to separate trichlorosilane and unreacted silicon tetrachloride from hydrogen, the trichlorosilane and unreacted silicon tetrachloride being introduced into the chlorinated gas purification system;introducing hydrogen and hydrogen chloride from the second effluent gas into a separation system to separate hydrogen and hydrogen chloride, the separation system comprising a hydrogen separator that is a bubbler, a hydrogen purifier that is an adsorber and a hydrogen chloride purifier that is a distillation column, wherein: the hydrogen and hydrogen chloride are introduced into the hydrogen separator to produce a hydrogen recycle gas and a hydrogen chloride recycle gas;the hydrogen recycle gas is introduced into a hydrogen purifier to remove impurities from the hydrogen recycle gas;the hydrogen chloride recycle gas is introduced into a hydrogen chloride purifier to remove impurities from the hydrogen chloride gas; andthe purified hydrogen recycle gas is introduced into at least one of the first fluidized bed reactor and the second fluidized bed reactor;introducing the purified hydrogen chloride recycle gas and silicon into a chlorination reactor to produce a chlorinated product gas comprising trichlorosilane and silicon tetrachloride;introducing the chlorinated product gas into the chlorinated gas purification system;introducing the purified trichlorosilane stream produced by contacting hydrogen chloride and silicon into the first fluidized bed reactor to produce polycrystalline silicon. 16. The process as set forth in claim 15 wherein the first effluent gas separator is a vapor-liquid separator. 17. The process as set forth in claim 15 wherein the second effluent gas separator is a vapor-liquid separator. 18. The process as set forth in claim 15 wherein the chlorinated product gas comprises trichlorosilane, silicon tetrachloride, hydrogen and unreacted hydrogen chloride and wherein the purification system comprises a chlorinated gas separator, a silicon tetrachloride separator and a trichlorosilane purifier, wherein: the chlorinated product gas is introduced into the chlorinated gas separator to separate trichlorosilane and silicon tetrachloride from hydrogen and unreacted hydrogen chloride;the separated trichlorosilane and silicon tetrachloride are introduced into the silicon tetrachloride separator to separate silicon tetrachloride from trichlorosilane and produce a trichlorosilane feed gas;the trichlorosilane feed gas is introduced into a trichlorosilane purifier to remove impurities from the feed gas; andthe purified trichlorosilane feed gas is introduced into the first fluidized bed reactor to produce polycrystalline silicon. 19. The process as set forth in claim 18 wherein the chlorinated gas separator is a vapor-liquid separator, the silicon tetrachloride separator is a distillation column and the trichlorosilane purifier is a distillation column. 20. The process as set forth in claim 18 wherein the separated hydrogen and unreacted hydrogen chloride are introduced into a separation system to separate hydrogen and hydrogen chloride, the separated hydrogen chloride being introduced into the chlorination reactor, the separated hydrogen being introduced into at least one of the first fluidized bed reactor and the second fluidized bed reactor. 21. The process as set forth in claim 15 wherein no hydrogen is added to the process as a make-up stream.
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이 특허에 인용된 특허 (14)
Van Slooten Richard A. (East Aurora NY) Prasad Ravi (East Amherst NY), Annular heated fluidized bed reactor.
Kim Hee Y. (Daejeon KRX) Song Yong M. (Daejeon KRX) Jeon Jong Y. (Daejeon KRX) Kwon Dae H. (Daejeon KRX) Lee Kang M. (Daejeon KRX) Lee Jae S. (Daejeon KRX) Park Dong S. (Daejeon KRX), Fluidized bed reactor heated by microwaves.
Padovani ; Francois A. ; Miller ; Michael Brant ; Moore ; James A. ; Fo wler ; James H. ; June ; Malcolm Neville ; Matthews ; James D. ; Morton ; T. R. ; Stotko ; Norbert A. ; Palmer ; Lewis B., Process of refining impure silicon to produce purified electronic grade silicon.
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