[특허]Photodetector capable of detecting long wavelength radiation

Photodetector capable of detecting long wavelength radiation 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/00 H01L-031/112 G02B-006/122 G02B-006/13 H01L-031/0232 H01L-031/18 B82Y-020/00
출원번호	US-0322695 (2014-07-02)
등록번호	US-9397249 (2016-07-19)
발명자 / 주소	Ahn, Doyeol
출원인 / 주소	University of Seoul Industry Cooperation Foundation
대리인 / 주소	Dorsey & Whitney LLP
인용정보	피인용 횟수 : 0 인용 특허 : 52

초록

Apparatuses capable of and techniques for detecting long wavelength radiation are provided.

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1. A method for assembling a photodetector capable of detecting long wavelength radiation, the method comprising: providing a source and a drain;coupling the source and the drain with at least one nano-assembly;positioning at least two surface plasmon waveguides between the source and the drain and juxtaposing to the at least one nano-assembly in a longitudinal direction of the at least one nano-assembly; andwherein one of the at least two surface plasmon waveguides is positioned along a first side of the at least one nano-assembly, and another of the at least two surface plasmon waveguides is positioned along a second side of the at least one nano-assembly that is opposite the first side. 2. The method of claim 1, further comprising forming the at least one nano-assembly by epitaxial growth. 3. The method of claim 1, further comprising: providing a substrate;preparing an insulation layer on the substrate on which the source and the drain are positioned. 4. The method of claim 1, wherein the at least two surface plasmon waveguides are positioned to receive photons from incident light and to confine at least a portion of the photons around at least a portion of the nano-assembly. 5. The method of claim 1, wherein at least one of the at least two surface plasmon waveguides is in contact with the at least one nano-assembly. 6. The method of claim 1, wherein at least one of the at least two surface plasmon waveguides is spaced from the at least one nano-assembly. 7. The method of claim 1, wherein the at least one nano-assembly is configured to have at least one intersubband such that at least one transition of electrons in the at least one intersubband corresponds to detection of a photon. 8. The method of claim 1, wherein the source and the drain are spaced from each other. 9. The method of claim 1, wherein the at least one nano-assembly includes at least one of a nanowire, a nanobelt, or a nanorod. 10. The method of claim 1, wherein the at least one nano-assembly includes an array of at least one of a nano-wire, a nanobelt, or a nanorod. 11. The method of claim 1, wherein the at least one nano-assembly includes at least one material selected from the group consisting of ZnO, Si, and InAs. 12. The method of claim 1, wherein the at least one nano-assembly includes a plurality of nano-assemblies each of which is fabricated from different types of material. 13. The method of claim 1, wherein at least one of the at least two surface plasmon waveguides is fabricated from a metallic material. 14. The method of claim 13, wherein the metallic material includes silver. 15. The method of claim 1, wherein the long wavelength radiation has a wavelength of at least 1 μm. 16. The method of claim 1, wherein the at least one nano-assembly has a width of about 10 nm to about 500 nm and a length of about 0.5 μm to about 5 μm. 17. A method for manufacturing a photodetector capable of detecting long wavelength radiation, the method comprising: forming a source and a drain;growing at least one nano-assembly that couples the source and the drain, the at least one nano-assembly includes a first side and a second side that is generally opposite the first side; andpositioning a first surface plasmon waveguide between the source and the drain and along the first side of the at least one nano-assembly;positioning a second surface plasmon waveguide between the source and drain and along the second side of the at least one nano-assembly. 18. The method of claim 17, wherein the at least two surface plasmon waveguides are positioned to receive photons from incident light and to confine at least a portion of the photons around at least a portion of the nano-assembly. 19. A method for manufacturing a photodetector capable of detecting long wavelength radiation, the method comprising: forming a source and a drain;growing at least one nano-assembly that couples the source and the drain, the at least one nano-assembly includes a first side and a second side that is generally opposite the first side; andpositioning a first surface plasmon waveguide between the source and the drain and along the first side of the at least one nano-assembly; andpositioning a second surface plasmon waveguide between the source and drain and along the second side of the at least one nano-assembly;wherein the first and second surface plasmon waveguides are positioned to receive photons from incident light and to confine at least a portion of the photons around at least a portion of the nano-assembly. 20. The method of claim 19, wherein growing at least one nano-assembly that couples the source and the drain includes epitaxially growing the at least one nano-assembly.

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Photodetector capable of detecting long wavelength radiation 원문보기

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