Glenn Lane Family Limited Liability Limited Partnership
대리인 / 주소
Saliwanchik, Lloyd & Eisenschenk
인용정보
피인용 횟수 :
0인용 특허 :
56
초록▼
Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the inventio
Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (CPC) superconductor, or boson energy transmission system.
대표청구항▼
1. An ion implantation system, comprising: an ion source, wherein the ion source outputs an ion beam having a plurality of ions that propagate along a beam line;a mass analyzer, wherein the mass analyzer generates a magnetic field, wherein the mass analyzer is positioned with respect to the ion beam
1. An ion implantation system, comprising: an ion source, wherein the ion source outputs an ion beam having a plurality of ions that propagate along a beam line;a mass analyzer, wherein the mass analyzer generates a magnetic field, wherein the mass analyzer is positioned with respect to the ion beam outputted by the ion source such that the magnetic field bends a trajectory of each of the ions within the ion beam outputted from the ion source such that ions having a first mass to charge ratio are bent more than ions having a second mass to charge ratio, wherein the second mass to charge ratio is different from the first mass to charge ratio, and wherein the trajectory of each of the ions lies in a corresponding plane; anda mass resolving aperture, wherein the mass resolving aperture has an opening,wherein the mass resolving aperture is positioned such that a first portion of the ions of the plurality of ions in the ion beam outputted from the mass analyzer as the ion beam approaches the mass resolving aperture pass through the opening and is in the ion beam after the ion beam exits the mass resolving aperture and the mass resolving aperture alters a motion of a second portion of the ions of the plurality of ions in the ion beam as the ion beam approaches the mass resolving aperture such that the second portion of the ions of the plurality of ions is not in the ion beam after the ion beam exits the mass resolving aperture,wherein at least a portion of an edge of the opening incorporates a fin, wherein the fin has a front surface and a rear surface,wherein a normal to the front surface has a component that is parallel to the beam line of the ion beam outputted from the mass analyzer as the ion beam approaches the mass resolving aperture and in a direction opposite to a direction the ion beam propagates,wherein a normal to the rear surface has a component that is parallel to the beam line of the ion beam as the ion beam exits the mass resolving aperture and in the direction the ion beam propagates,wherein the fin has a leading portion on the front surface that has a normal to the leading portion on the front surface that is parallel to the beam line of the ion beam outputted from the mass analyzer as the ion beam approaches the mass resolving aperture and in the direction opposite to the direction the ion beam propagates,wherein the front surface curves away from the leading portion on the front surface in a direction toward the opening to form an inner convex section of the front surface adjacent to the leading portion on the front surface, and wherein the front surface curves away from the leading portion on the front surface in the direction away from the opening to form an outer concave section of the front surface. 2. The ion implantation system according to claim 1, wherein ions of the plurality of ions in the ion beam outputted from the mass analyzer as the ion beam approaches the mass resolving aperture that impact the inner convex section of the front surface are deflected out of the ion beam. 3. The ion implantation system according to claim 1, wherein the front surface curves away from the leading portion on the front surface in a direction away from the opening to form an outer convex section of the front surface adjacent the leading portion on the front surface, adjacent the outer concave section of the front surface, and between the leading portion on the front surface and the outer concave section of the front surface. 4. The ion implantation system according to claim 3, wherein ions of the plurality of ions in the ion beam outputted from the mass analyzer as the ion beam approaches the mass resolving aperture that impact the outer convex section of the front surface are deflected out of the ion beam. 5. The ion implantation system according to claim 1, wherein at least a portion of the fin is segmented such that a first segment of the fin has a different electric charge or a different magnetic polarity than a second segment of the fin. 6. The ion implantation system according to claim 5, wherein the first segment has an electric charge such that the outer concave section of the front surface attracts the ions in the second portion of ions of the plurality of ions. 7. The ion implantation system according to claim 1, wherein the fin extends from the edge around the entire opening. 8. The ion implantation system according to claim 1, wherein a width of the opening in adjustable, wherein the width of the opening is measured in a direction lying in the plane, and wherein adjusting the width of the opening alters which ions of the plurality of ions are in the first portion of the ions of the plurality of ions. 9. The ion implantation system according to claim 8, wherein the mass resolving aperture comprises:four sides, wherein at least one side of the four sides is linearly movable, and wherein linearly moving one of more of the at least one linearly movable sides adjusts a height of the opening and/or the width of the opening. 10. The ion implantation system according to claim 9, wherein each side of the four sides is linearly movable in a direction parallel with the direction the width of the opening is measured in and linearly movable in a direction parallel with a direction the height of the opening is measured in, wherein the direction the height of the opening is measured in is perpendicular to the direction the width of the opening is measured in, andwherein any opening size within an opening size operating range can be achieved by linearly moving at least two of the four sides in the direction parallel with the direction the width of the opening is measured in and/or in the direction parallel with the direction the height of the opening is measured in. 11. An ion implantation system, comprising: an ion source, wherein the ion source outputs an ion beam having a plurality of ions that propagate along a beam line;a mass analyzer, wherein the mass analyzer generates a magnetic field, wherein the mass analyzer is positioned with respect to the ion beam outputted by the ion source such that the magnetic field bends a trajectory of each of the ions within the ion beam outputted from the ion source such that ions having a first mass to charge ratio are bent more than ions having a second mass to charge ratio, wherein the second mass to charge ratio is different from the first mass to charge ratio, and wherein the trajectory of each of the ions lies in a corresponding plane;a mass resolving aperture, wherein the mass resolving aperture has an opening,wherein the mass resolving aperture is positioned such that a first portion of the ions of the plurality of ions in the ion beam outputted from the mass analyzer as the ion beam approaches the mass resolving aperture pass through the opening and is in the ion beam after the ion beam exits the mass resolving aperture and the mass resolving aperture alters a motion of a second portion of the ions of the plurality of ions in the ion beam as the ion beam approaches the mass resolving aperture such that the second portion of the ions of the plurality of ions is not in the ion beam after the ion beam exits the mass resolving aperture,wherein a height of the opening is adjustable, wherein the height of the opening is measured in a direction perpendicular to the plane, wherein adjusting the height of the opening alters which ions are in the first portion of the ions of the plurality of ions,wherein a width of the opening in adjustable, wherein the width of the opening is measured in a direction lying in the plane, wherein adjusting the width of the opening alters which ions are in the first portion of the ions of the plurality of ions,wherein the mass resolving aperture comprises:four sides, wherein at least one side of the four sides is linearly movable, wherein linearly moving one of more sides of the at least one linearly movable sides adjusts the height of the opening and/or the width of the opening,wherein at least a portion of an edge of at least one side incorporates a fin, wherein the fin has a front surface and a rear surface, wherein a normal to the front surface has a component that is parallel to the beam line of the ion beam outputted from the mass analyzer as the ion beam approaches the mass resolving aperture and in a direction opposite to a direction the ion beam propagates, wherein a normal to the rear surface has a component that is parallel to the beam line of the ion beam as the ion beam exits the mass resolving aperture and in a direction the ion beam propagates, wherein the fin has a leading portion on the front surface that has a normal to the leading portion on the front surface that is parallel to the beam line of the ion beam outputted from the mass analyzer as the ion beam approaches the mass resolving aperture and in the direction opposite to the direction the ion beam propagates,wherein the front surface curves away from the leading portion in a direction toward the opening to form an inner convex section of the front surface adjacent to the leading portion, and wherein the front surface curves away from the leading portion on the front surface in the direction away from the opening to form an outer concave section of the front surface. 12. The ion implantation system according to claim 11, wherein the front surface curves away from the leading portion on the front surface in a direction away from the opening to form an outer convex section of the front surface adjacent the leading portion adjacent the outer concave section of the front surface, and between the leading portion on the front surface and the outer concave section of the front surface. 13. The ion implantation system according to claim 12, wherein each of the four sides has a corresponding fin along a length of a corresponding edge.
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