Method of forming feedthrough with integrated brazeless ferrule
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C23C-024/08
A61N-001/375
C23C-004/12
출원번호
US-0961421
(2013-08-07)
등록번호
US-9403023
(2016-08-02)
발명자
/ 주소
Markham, Jacob
Hausch, Ulrich
출원인 / 주소
Heraeus Deutschland GmbH & Co. KG
대리인 / 주소
Dicke, Billig & Czaja, PLLC
인용정보
피인용 횟수 :
2인용 특허 :
106
초록▼
One aspect provides a method of forming a feedthrough device for an implantable medical device. The method includes providing a bulk insulator having a longitudinal length extending between first and second end faces, and including one or more conducting elements extending therethrough between the f
One aspect provides a method of forming a feedthrough device for an implantable medical device. The method includes providing a bulk insulator having a longitudinal length extending between first and second end faces, and including one or more conducting elements extending therethrough between the first and second end faces, the bulk insulator having a perimeter surface along the longitudinal length, and depositing one of a metal, metal alloy, or cermet on the perimeter surface to form a ferrule directly thereon, wherein the ferrule can be joined to other components of the implantable medical device.
대표청구항▼
1. A method of forming a feedthrough device for an implantable medical device, the method comprising: providing a bulk insulator having a longitudinal length extending between first and second end faces, and including one or more conducting elements extending therethrough between the first and secon
1. A method of forming a feedthrough device for an implantable medical device, the method comprising: providing a bulk insulator having a longitudinal length extending between first and second end faces, and including one or more conducting elements extending therethrough between the first and second end faces, the bulk insulator having a perimeter surface along the longitudinal length; anddepositing one of a metal, metal alloy, or cermet on the perimeter surface to form a ferrule directly on the perimeter surface of the bulk insulator to provide the ferrule with a desired final shape for coupling to a case of the implantable medical device. 2. The method of claim 1, wherein the depositing of the metal, metal alloy, or cermet comprises a powder deposition process. 3. The method of claim 2, wherein the powder deposition process comprises a Laser Engineered Net Shaping™ process to coat the perimeter surface of the insulator with the metal, metal alloy, or cermet. 4. The method of claim 2, wherein the powder deposition process comprises a plasma thermal spraying process to coat the perimeter surface of the insulator with the metal, metal alloy, or cermet. 5. The method of claim 1, wherein after the metal, metal alloy, or cermet has been deposited, the method further includes segmenting the bulk insulator along the longitudinal length into individual segments each having a thickness, each individual segment forming a feedthrough device. 6. The method of claim 1, further including preheating the insulator with a laser from room temperature to a desired temperature within a range from 800 to 1500° C. prior to depositing the metal or metal alloy on the perimeter surface. 7. The method of claim 6, wherein the preheating from room temperature to the desired temperature has a ramp rate from 15 to 180 seconds. 8. The method of claim 1, further including using a laser to ramp down a temperature of the insulator from a temperature at a time of the depositing of the metal or metal alloy to room temperature. 9. The method of claim 1, wherein depositing the metal or metal alloy includes controlling deposition of the metal or metal alloy so that the resulting ferrule has a desired final cross-sectional shape. 10. The method of claim 1, further including machining the metal or metal alloy deposited on the perimeter surface of the insulator to provide the ferrule with a desired final cross-sectional shape. 11. The method of claim 1, wherein the metal or metal alloy forming the ferrule comprises one of the group consisting of niobium, titanium, tantalum, tungsten, molybdenum, cobalt, zirconium, chromium, platinum, and alloy combinations thereof. 12. The method of claim 1, wherein the insulator comprises aluminum oxide and the conductive elements comprise a cermet. 13. The method of claim 1, wherein depositing the metal or metal alloy includes depositing the metal or metal alloy with a thickness in a range from 200 μm to 800 μm. 14. A method of forming a feedthrough device for an implantable medical device, the method comprising: providing a bulk insulator having a longitudinal length extending between first and second end faces, and including one or more conducting elements extending therethrough between the first and second end faces, the bulk insulator having a perimeter surface along the longitudinal length;metallizing the perimeter surface to provide a metallized layer on the perimeter surface; anddepositing one of a metal, metal alloy, or cermet on the metallized perimeter surface to form a ferrule directly on the metallized perimeter surface of the bulk insulator, wherein the ferrule can be joined to other components of the implantable medical device. 15. The method of claim 14, wherein the metallized layer has a thickness in a range from 0.2 μm to 10 μm. 16. The method of claim 14, wherein the metallized layer is of a metal comprising one selected from the group consisting of titanium, niobium, platinum, palladium, and gold. 17. A method of forming a feedthrough device for an implantable medical device, the method comprising: providing an insulator having one or more conducting elements extending therethrough, the insulator having a perimeter edge surface;metallizing the perimeter edge surface to provide a metallized layer thereon; anddepositing one of a metal, metal alloy, or cermet having a thickness in a range from 200 to 800 μm on the metallized layer using a powder deposition process to form a ferrule thereon and thereby form the feedthrough device. 18. The method of claim 17, wherein the metallized layer has a thickness in a range from 0.2 μm to 10 μm and comprises a metal selected from the group of metals consisting of titanium, niobium, platinum, palladium, and gold. 19. The method of claim 17, wherein the powder deposition process comprises a Laser Engineered Net Shaping™ process. 20. The method of claim 17, wherein the powder deposition process comprises a plasma thermal spraying process.
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