Nanowire arrays comprising fluorescent nanowires and substrate
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G01J-001/04
G01J-001/42
C01B-003/00
G01J-005/08
출원번호
US-0503598
(2014-10-01)
등록번호
US-9410843
(2016-08-09)
발명자
/ 주소
Wober, Munib
출원인 / 주소
ZENA TECHNOLOGIES, INC.
대리인 / 주소
Pillsbury Winthrop Shaw Pittman LLP
인용정보
피인용 횟수 :
0인용 특허 :
176
초록▼
Described herein is a nanowire array, comprising a substrate, a plurality of fluorescent nanowires extending essentially perpendicularly from the substrate and a reflective layer disposed on the substrate in areas between the fluorescent nanowires; wherein the fluorescent nanowires are operable to f
Described herein is a nanowire array, comprising a substrate, a plurality of fluorescent nanowires extending essentially perpendicularly from the substrate and a reflective layer disposed on the substrate in areas between the fluorescent nanowires; wherein the fluorescent nanowires are operable to fluoresce at a wavelength of a collective mode of the nanowire array.
대표청구항▼
1. A nanowire array, comprising a substrate, a plurality of nanowires extending essentially perpendicularly from the substrate, wherein the nanowire array has a collective mode, wherein the nanowire array is configured to fluoresce at a wavelength of the collective mode. 2. The nanowire array of cla
1. A nanowire array, comprising a substrate, a plurality of nanowires extending essentially perpendicularly from the substrate, wherein the nanowire array has a collective mode, wherein the nanowire array is configured to fluoresce at a wavelength of the collective mode. 2. The nanowire array of claim 1, further comprising a reflective layer at least disposed on the substrate in at least a portion of areas between the nanowires. 3. The nanowire array of claim 1, wherein the nanowires comprise fluorescent nanowires. 4. The nanowire array of claim 1, wherein the substrate comprises a material comprising silicon, sapphire, glass, silicon oxide, diamond, ZnO, a transparent non-absorbing dielectric material, or a combination thereof; or wherein the substrate has a thickness of about 0.1 to about 1 mm; or wherein the substrate comprises substantially a same material as or different materials from the nanowires. 5. The nanowire array of claim 2, wherein the reflective layer comprises a material selected from a group consisting of ZnO, Al, Au, Ag, Pd, Cr, Cu, and a combination thereof; or wherein the reflective layer has a reflectance of at least 50% for fluoresced light from the fluorescent nanowires; or wherein the reflective layer has a thickness of at least about 5 nm. 6. The nanowire array of claim 2, wherein the reflective layer is also disposed on the substrate in at least a portion of areas covered by the nanowires. 7. The nanowire array of claim 1, wherein the nanowires are at least partially embedded in a material. 8. The nanowire array of claim 1, wherein the nanowires comprise one or more fluorescent material. 9. The nanowire array of claim 1, wherein the nanowires comprise a material selected from the group consisting of inorganic fluorescent materials, organic fluorescent materials, quantum dots, diamond with color centers embedded therein, and a combination thereof. 10. The nanowire array of claim 1, wherein the nanowires comprise one or more non-fluorescent material with one or more fluorescent material embedded therein or covered thereby. 11. The nanowire array of claim 1, wherein fluoresced light of the nanowire array is substantially spatially and/or temporally coherent. 12. The nanowire array of claim 1, wherein the wavelength of the collective mode of the nanowire array is substantially equal to a pitch of the nanowire array. 13. The nanowire array of claim 1, wherein the collective mode is an air mode. 14. A light source comprising one or more of the nanowire array of claim 1. 15. A method of using a nanowire array comprising exposing the nanowire array to light, wherein the nanowire array comprises: a substrate,a plurality of nanowires extending essentially perpendicularly from the substrate,wherein the nanowire array has a collective mode, wherein the nanowire array is configured to fluoresce at a wavelength of the collective mode. 16. The method of claim 15, wherein the light has a shorter wavelength than the wavelength of the wavelength of the collective mode of the nanowire array. 17. The method of claim 15, wherein the light is provided by a source selected from the group consisting of LEDs, fluorescent lamps, mercury-vapor lamps, sodium-vapor lamps, discharge lamps, sunlight, incandescent lamps, laser and combinations thereof. 18. A method of manufacturing a nanowire array comprising: obtaining a substrate;forming a plurality of nanowires extend essentially perpendicularly from the substrate;wherein the nanowire array is configured to fluoresce at a wavelength of a collective mode of the nanowire array. 19. The method of claim 18, wherein the substrate comprises a layer of fluorescent material, wherein forming the plurality of nanowires comprises etching the layer of fluorescent material. 20. The method of claim 18, wherein forming the plurality of nanowires comprises: depositing a fluorescent material on or embedding a fluorescent material in the nanowires. 21. The method of claim 20, further comprising annealing the nanowires. 22. The method of claim 18, further comprising depositing a reflective layer at least on the substrate in at least a portion of areas between the nanowires. 23. The light source of claim 14, wherein the light source is a laser.
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