최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
DataON 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Edison 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0659437 (2015-03-16) |
등록번호 | US-9412564 (2016-08-09) |
발명자 / 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 | 피인용 횟수 : 36 인용 특허 : 591 |
A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the p
A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.
1. A processing chamber comprising: a reaction chamber having a processing area;a processing gas inlet in communication with the processing area;a faraday shield;a first excited species generation zone in communication with the processing gas inlet; anda second excited species generation zone in com
1. A processing chamber comprising: a reaction chamber having a processing area;a processing gas inlet in communication with the processing area;a faraday shield;a first excited species generation zone in communication with the processing gas inlet; anda second excited species generation zone in communication with the processing gas inlet,wherein both of the first excited species generation zone and the second excited species generation zone are contained within the faraday shield, andwherein a valve is positioned between one or more of the first excited species generation zone and the processing gas inlet and the second excited species generation zone and the processing gas inlet. 2. The processing chamber of claim 1, wherein a reaction chamber is selectively exposed to first excited species from the first excited species generation zone and second excited species from the second excited species generation zone. 3. The processing chamber of claim 1, wherein the first and second excited species generation zones are co-axially aligned. 4. The processing chamber of claim 1 wherein the first excited species generation zone comprises an inductively coupled plasma generator. 5. The processing chamber of claim 1, wherein the second excited species generation zone comprises an inductively coupled plasma generator. 6. The processing chamber of claim 1, wherein the first excited species generation zone comprises a capacitively coupled plasma generator. 7. The processing chamber of claim 1, wherein the second excited species generation zone comprises a capacitively coupled plasma generator. 8. The processing chamber of claim 1, further comprising an inert gas flow positioned between the first and second excited species generation zones. 9. The processing chamber of claim 1, wherein the first and second excited species generation zones are separated by inert gas valves. 10. A processing chamber comprising: a reaction chamber having a processing area;a processing gas inlet in communication with the processing area;a first excited species generation zone in communication with the processing gas inlet; anda second excited species generation zone in communication with the processing gas inlet,wherein the reaction chamber is selectively exposed to first excited species from the first excited species generation zone and second excited species from the second excited species generation zone. 11. The processing chamber of claim 10, wherein the first excited species generation zone and the second excited species generation zone are within a faraday shield. 12. The processing chamber of claim 10, wherein the first and second excited species generation zones are co-axially aligned. 13. The processing chamber of claim 10, wherein the first and second excited species generation zones are non-co-axial. 14. The processing chamber of claim 10, wherein the first excited species generation zone comprises an inductively coupled plasma generator. 15. The processing chamber of claim 10, wherein the first excited species generation zone comprises a capacitively coupled plasma generator. 16. An apparatus for processing a substrate, the apparatus comprising: a first excited species generation zone in communication with a processing gas inlet; anda second excited species generation zone in communication with the processing gas inlet,wherein first excited species from the first excited species generation zone and second excited species from the second excited species generation zone are selectively introduced to an inlet of a reaction zone. 17. The apparatus of claim 16 wherein the first and second excited species generation zones are non-co-axial. 18. The processing chamber of claim 16 wherein the first and second excited species generation zones are co-axially aligned. 19. A processing chamber comprising: a reaction chamber having a processing area;a processing gas inlet in communication with the processing area;a faraday shield;a first excited species generation zone in communication with the processing gas inlet; anda second excited species generation zone in communication with the processing gas inlet,wherein both of the first excited species generation zone and the second exited excited species generation zone are contained within the faraday shield, andwherein a reaction chamber is selectively exposed to first excited species from the first excited species generation zone and second excited species from the second excited species generation zone. 20. A processing chamber comprising: a reaction chamber having a processing area;a processing gas inlet in communication with the processing area;a faraday shield;a first excited species generation zone in communication with the processing gas inlet; anda second excited species generation zone in communication with the processing gas inlet,wherein both of the first excited species generation zone and the second exited excited species generation zone are contained within the faraday shield, andwherein the first and second excited species generation zones are co-axially aligned. 21. A processing chamber comprising: a reaction chamber having a processing area;a processing gas inlet in communication with the processing area;a faraday shield;a first excited species generation zone in communication with the processing gas inlet;a second excited species generation zone in communication with the processing gas inlet; andan inert gas flow positioned between the first and second excited species generation zones,wherein both of the first excited species generation zone and the second exited excited species generation zone are contained within the faraday shield. 22. A processing chamber comprising: a reaction chamber having a processing area;a processing gas inlet in communication with the processing area;a faraday shield;a first excited species generation zone in communication with the processing gas inlet; anda second excited species generation zone in communication with the processing gas inlet,wherein both of the first excited species generation zone and the second exited excited species generation zone are contained within the faraday shield, andwherein the first and second excited species generation zones are separated by inert gas valves.
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