In various embodiments, joined sputtering targets are formed at least in part by spray deposition of the sputtering material and/or welding.
대표청구항▼
1. A joined sputtering target comprising a sputtering material, the joined sputtering target comprising: first and second discrete sputtering-target tiles joined at an interface therebetween, the tiles comprising the sputtering material,wherein:the interface comprises a recess therealong at least pa
1. A joined sputtering target comprising a sputtering material, the joined sputtering target comprising: first and second discrete sputtering-target tiles joined at an interface therebetween, the tiles comprising the sputtering material,wherein:the interface comprises a recess therealong at least partially filled with unmelted powder,the first tile comprises a beveled edge forming at least a portion of the recess and disposed in contact with the unmelted powder,the beveled edge has a reentrant surface comprising (i) one or more concave portions and (ii) one or more convex portions, and (iii) one or more inflection points each separating a concave portion from a convex portion, andno part of the beveled edge overlaps any portion of the second tile. 2. The joined sputtering target of claim 1, wherein the first and second tiles are joined at opposing edges, and the interface further comprises portions of the two opposing edges substantially in contact with each other and disposed beneath the at least partially filled recess. 3. The joined sputtering target of claim 1, wherein at least a portion of the beveled edge is substantially planar and forms an angle of greater than 45° with respect to a normal to a top surface of the joined sputtering target. 4. The joined sputtering target of claim 3, wherein the angle is selected from the range of 45° to 60°. 5. The joined sputtering target of claim 1, wherein the unmelted powder comprises the sputtering material. 6. The joined sputtering target of claim 5, wherein the unmelted powder consists essentially of the sputtering material. 7. The joined sputtering target of claim 1, wherein each of the first and second tiles consists essentially of the sputtering material. 8. The joined sputtering target of claim 1, wherein the sputtering material comprises a mixture or alloy of at least two constituent materials. 9. The joined sputtering target of claim 8, wherein the unmelted powder comprises discrete regions each substantially free of at least one of the constituent materials, and the joined sputtering target comprises at least one region at the interface in which at least two of the constituent materials are interdiffused. 10. The joined sputtering target of claim 8, wherein the at least two constituent materials comprise Mo and Ti. 11. The joined sputtering target of claim 1, further comprising a backing plate attached to the first and second tiles. 12. The joined sputtering target of claim 11, wherein the unmelted powder is in contact with the backing plate. 13. The joined sputtering target of claim 1, wherein at least a portion of the joined sputtering target is substantially planar. 14. The joined sputtering target of claim 1, wherein at least a portion of the joined sputtering target is substantially tubular. 15. The joined sputtering target of claim 1, wherein (i) the reentrant surface comprises a first concave portion having a first radius of curvature, (ii) the reentrant surface comprises a first convex portion having a second radius of curvature, and (iii) the first radius of curvature is approximately equal to the second radius of curvature. 16. The joined sputtering target of claim 1, wherein (i) the reentrant surface comprises a first concave portion having a first radius of curvature, (ii) the reentrant surface comprises a first convex portion having a second radius of curvature, and (iii) the first radius of curvature is smaller than the second radius of curvature. 17. The joined sputtering target of claim 1, wherein: each of the first and second tiles comprises a beveled edge forming at least a portion of the recess and disposed in contact with the unmelted powder,each beveled edge has a reentrant surface comprising (i) one or more concave portions and (ii) one or more convex portions, and (iii) one or more inflection points each separating a concave portion from a convex portion, andneither beveled edge overlaps any portion of the other tile. 18. The joined sputtering target of claim 1, wherein the reentrant surface comprises a plurality of concave portions, each pair of concave portions being separated by a convex portion therebetween. 19. The joined sputtering target of claim 18, wherein the reentrant surface comprises a plurality of convex portions. 20. The joined sputtering target of claim 1, wherein the interface comprises a gap between the first and second tiles having a width of at least 2 mm, the gap comprising unmelted powder therewithin. 21. The joined sputtering target of claim 20, wherein the width of the gap ranges from 2 mm to 8 mm. 22. The joined sputtering target of claim 1, wherein the sputtering material comprises at least one of titanium, niobium, tantalum, or tungsten. 23. The joined sputtering target of claim 1, wherein the sputtering material consists essentially of at least one of titanium, niobium, tantalum, or tungsten. 24. The joined sputtering target of claim 8, wherein the at least two constituent materials comprise W and Ti. 25. The joined sputtering target of claim 8, wherein the at least two constituent materials comprise Cu and W. 26. The joined sputtering target of claim 11, wherein the backing plate is attached to the first and second tiles via a joining compound. 27. The joined sputtering target of claim 26, wherein the joining compound comprises In solder. 28. The joined sputtering target of claim 1, wherein the joined sputtering target is substantially free of residual stress. 29. The joined sputtering target of claim 1, wherein an areal dimension of the joined sputtering target is at least 2800 mm×2500 mm. 30. The joined sputtering target of claim 1, wherein a length of the joined sputtering target is 2.7 meters or longer.
Alkhimov Anatoly P. (ulitsa Vyazemskogo 2 ; kv. 72 Novosibirsk SUX) Papyrin Anatoly N. (ulitsa Vyazemskogo 2 ; kv. 72 Novosibirsk SUX) Kosarev Vladimir F. (Novosibirsk SUX) Nesterovich Nikolai I. (No, Gas-dynamic spraying method for applying a coating.
Kopatz Nelson E. (Sayre PA) Johnson Walter A. (Towanda PA) Ritsko Joseph E. (Towanda PA), Hydrometallurical process for producing finely divided spherical refractory metal based powders.
Ahslund Christer (Torshlla SEX) Andersson Karl H. T. (Eskilstuna SEX) Bergh Sven S. (Tby SEX), Loose sintering of spherical ferritic-austenitic stainless steel powder and porous body.
Kumar, Prabhat; Aimone, Paul; Balliett, Robert W.; Parise, Anthony V.; Ramlow, Thomas M.; Uhlenhut, Henning, Low oxygen refractory metal powder for powder metallurgy.
Shekhter, Leonid N.; Tripp, Terrance B.; Lanin, Leonid L.; Reichert, Karlheinz; Thomas, Oliver; Vieregge, Joachim, Metal powders produced by the reduction of the oxides with gaseous magnesium.
Van Steenkiste, Thomas Hubert; Gorkiewicz, Daniel William; Drew, George Albert, Method for producing electrical contacts using selective melting and a low pressure kinetic spray process.
Shekhter Leonid N. ; Tripp Terrance B. ; Lanin Leonid L., Method for producing tantallum/niobium metal powders by the reduction of their oxides with gaseous magnesium.
William R. Stowell ; Robert A. Johnson ; Andrew J. Skoog ; Joseph Thomas Begovich ; Thomas Walter Rentz ; Jane Ann Murphy ; Ching-Pang Lee ; Dainel P. Ivkovich, Jr., Method for repairing a thermal barrier coating and repaired coating formed thereby.
Van Steenkiste,Thomas Hubert; Mantese,Joseph V.; Li,Bob Xiaobin; Wethey,Pertrice Auguste; Johnston,Robert Paul; Nelson,David Emil, Method for securing ceramic structures and forming electrical connections on the same.
Van Steenkiste, Thomas Hubert; Smith, John R.; Gorkiewicz, Daniel William; Elmoursi, Alaa A.; Gillispie, Bryan A.; Patel, Nilesh B., Method of maintaining a non-obstructed interior opening in kinetic spray nozzles.
Pathare Viren M. ; Rao Bhamidipaty K. D. P. ; Fife James Allen ; Chang Hongju ; Steele Roger W. ; Ruch Lee M., Method of making tantalum metal powder with controlled size distribution and products made therefrom.
Cretella Salvatore J. (180 Fitch St. North Haven CT 06473) Bernardo Matthew (62 Lee St. West Haven CT 06516) De Musis Ralph T. (547 Foxon Rd. North Branford CT 06471), Method of refurbishing turbine vane or blade components.
Cretella Salvatore J. (180 Fitch St. North Haven CT 06473) Bernardo Matthew (62 Lee St. West Haven CT 06516) DeMusis Ralph T. (547 Foxon Road North Branford CT 06473), Method of refurbishing turbine vanes and the like.
Mu Xiao-Chun (Saratoga CA) Sivaram Srinivasan (San Jose CA) Gardner Donald S. (Mountain View CA) Fraser David B. (Danville CA), Methods of forming an interconnect on a semiconductor substrate.
Volchko, Scott Jeffrey; Zimmermann, Stefan; Miller, Steven A.; Stawovy, Michael Thomas, Methods of manufacturing high-strength large-area sputtering targets.
Ackerman,John Frederick; Arszman,Paul Vincent; Nagaraj,Bangalore Aswatha; Justis,Nicole, Optical reflector for reducing radiation heat transfer to hot engine parts.
Danna Peter A. (Milford CT) Holcomb Richard A. (Lake Charles LA) Roethlein Richard J. (Stafford Springs CT), Process for bonding titanium, tantalum, and alloys thereof.
Shekhter, Leonid N.; Miller, Steven A.; Haywiser, Leah F.; Wu, Rong-Chein R., Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof.
Shekhter, Leonid N.; Miller, Steven A.; Haywiser, Leah F.; Wu, Rong-Chein Richard, Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof.
Makowiecki Daniel M. (Livermore CA) Ramsey Philip B. (Livermore CA) Juntz Robert S. (Hayward CA), Process for the fabrication of aluminum metallized pyrolytic graphite sputtering targets.
Albrecht Wolf-Wigand (Bad Harzburg DEX) Papp Uwe (Goslar DEX), Production of highly capacitive agglomerated valve metal powder and valve metal electrodes for the production of electro.
Aimone, Paul R.; Kumar, Prabhat; Jepson, Peter R.; Uhlenhut, Henning; Goldberg, Howard V.; Miller, Steven A., Rejuvenation of refractory metal products.
Demaray Richard Ernest (190 Fawn La. Portola Valley CA 94028) Herrera Manuel (1583 Brandywine Rd. San Mateo CA 94402) Berkstresser David E. (19311 Bear Creek Rd. Los Gatos CA 95030), Sputtering device.
Shin Hank H. (Gilbert AZ) Tracy Clarence J. (Tempe AZ) Duffin Robert L. (Mesa AZ) Freeman ; Jr. John L. (Mesa AZ) Grivna Gordon (Mesa AZ) Wilson Syd R. (Phoenix AZ), Structure and method for metallization of semiconductor devices.
Tapphorn, Ralph M.; Gabel, Howard, System and process for solid-state deposition and consolidation of high velocity powder particles using thermal plastic deformation.
Tapphorn,Ralph M.; Gabel,Howard, System and process for solid-state deposition and consolidation of high velocity powder particles using thermal plastic deformation.
Wolf Rudiger,DEX ; Reichert Karlheinz,DEX ; Biermann Heike,DEX ; Loffelholz Josua,DEX ; Breithaupt Detlef,DEX, Tantalum powder, method for producing same powder and sintered anodes obtained from it.
Kida, Otojiro; Mitsui, Akira; Suzuki, Eri; Osaki, Hisashi; Hayashi, Atsushi, Target and process for its production, and method of forming a film having a high refractive index.
Browning James A. (c/o Browning Companies ; P.O. Box A ; May St. Enfield NH 03748), Thermal spray method utilizing in-transit powder particle temperatures below their melting point.
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