Protection circuit and a gate driving circuitry
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H02H-003/20
H02H-009/04
H02H-003/28
H03K-017/082
H03K-017/10
출원번호
US-0394675
(2012-04-19)
등록번호
US-9413160
(2016-08-09)
국제출원번호
PCT/IB2012/001611
(2012-04-19)
§371/§102 date
20141015
(20141015)
국제공개번호
WO2013/156811
(2013-10-24)
발명자
/ 주소
Gao, Yuan
Besse, Patrice
Laplagne, Thierry
출원인 / 주소
Freescale Semiconductor, Inc.
대리인 / 주소
Jacobsen, Charlene R.
인용정보
피인용 횟수 :
0인용 특허 :
7
초록▼
A protection circuit and a gate driving circuitry. The protection circuit is for protecting a p-type back-to-back MOS switch. The circuit receives an input driving signal and provides a driving output signal to common gates of the p-type back-to-back MOS switch. The circuit comprises a driving signa
A protection circuit and a gate driving circuitry. The protection circuit is for protecting a p-type back-to-back MOS switch. The circuit receives an input driving signal and provides a driving output signal to common gates of the p-type back-to-back MOS switch. The circuit comprises a driving signal insulation switch for disconnecting the common gate of the p-type back-to-back MOS switch from the received input driving signal when the voltage of the common gates is larger than the supply voltage of the circuit. The circuit further comprises a gate source coupling switch for coupling a voltage received at the common source of the p-type back-to-back MOS switch to the common gate if a received voltage at the common sources is larger than a reference voltage Vref.
대표청구항▼
1. A protection circuit for a p-type back-to-back MOS switch, the protection circuit arranged in the driving path of the p-type back-to-back MOS switch, the p-type back-to-back MOS switch having two p-type MOSFETS with common sources and common gates, the protection circuit comprising: a driving sig
1. A protection circuit for a p-type back-to-back MOS switch, the protection circuit arranged in the driving path of the p-type back-to-back MOS switch, the p-type back-to-back MOS switch having two p-type MOSFETS with common sources and common gates, the protection circuit comprising: a driving signal input terminal for receiving an input driving signal;a driving signal output terminal for providing a driving signal to the common gates;a common source terminal for being coupled to the common sources;a driving signal insulation switch having a first conduction path terminal, a second conduction path terminal and a first switchable conduction path coupled between the first conduction path terminal and the second conduction path terminal, the first conduction path terminal coupled to the driving signal input terminal, the second conduction path terminal coupled to the driving signal output terminal, and the driving signal insulation switch configured to arrange the first conduction path in a non-conducting mode if a voltage of the driving signal output terminal exceeds a supply voltage of the protection circuit; anda gate source coupling switch having a third conduction path terminal, a fourth conduction path terminal, a fifth terminal for receiving a reference voltage and a second switchable conduction path between the third conduction path terminal and the fourth conduction path terminal, the third conduction path terminal coupled to the common source terminal and the fourth conduction path terminal coupled to the driving signal output terminal, the gate source coupling switch configured to arrange the second conduction path in a conducting mode if a voltage of the common source terminal raises above the reference voltage. 2. The protection circuit according to claim 1, wherein the reference voltage is the supply voltage. 3. The protection circuit according to claim 1, wherein the driving signal insulation switch is configured to arrange the first conduction path into the conductive mode if the voltage of the driving signal output terminal is not higher than the supply voltage. 4. The protection circuit according to claim 1, wherein the driving signal insulation switch is configured to arrange the first conduction path only in a non-conducting mode if a voltage of the input driving signal is unequal to a ground voltage and a voltage of the driving signal output terminal exceeds the supply voltage, and the driving signal insulation switch is configured to arrange the first conduction path in a conducting mode if the voltage of the driving signal output terminal is not larger than the supply voltage. 5. The protection circuit according to claim 1, wherein the driving signal insulation switch comprises a n-channel MOSFET coupled with its gate to the supply voltage of the protection circuit, with its source to the first conduction path terminal and with its drain to the second conduction path terminal. 6. The protection circuit according to claim 1, wherein the gate source coupling switch is configured to arrange the second switchable conduction path into the non-conductive mode if the voltage of the common source terminal is not higher than the reference voltage. 7. The protection circuit according to claim 1, wherein the gate source coupling switch is configured to arrange the second switchable conduction path only in the conducting mode if the voltage of the common source terminal exceeds the reference voltage and the voltage of the common source terminal is higher than the voltage of the driving signal output terminal and the gate source coupling switch is configured to arrange the second switchable conduction path in a non-conducting mode otherwise. 8. The protection circuit according to claim 1, wherein the gate source coupling switch comprises a pnp bipolar transistor and a resistor which is coupled between the reference voltage and the base of the pnp bipolar transistor, the emitter of the pnp bipolar transistor is coupled to the third conduction path terminal and the collector of the pnp bipolar transistor is coupled to the fourth conduction path terminal. 9. The protection circuit according to claim 8, wherein the gate source coupling switch comprises a reference voltage protection switch which includes a fifth conduction path terminal, a sixth conduction path terminal, a third switchable conduction path arranged in between the first conduction path terminal and the sixth conduction path terminal, and a control terminal for receiving a control signal, the fifth conduction path terminal is coupled to the reference voltage, the sixth conduction path terminal is coupled to the resistor, the control terminal is coupled to the driving signal output terminal, the reference voltage protection switch is configured to arrange the third switchable conduction path in a non-conducting mode if a voltage received at the control terminal is higher than the reference voltage and to arrange the third switchable conduction path in the conducting mode otherwise. 10. The protection circuit according to claim 9, wherein the reference voltage protection switch comprises a p-channel MOSFET which is coupled with its gate to the control terminal, with its drain to the fifth conduction path terminal and with its source to the sixth conduction path terminal. 11. A gate driving circuitry comprising the p-type back-to-back MOS switch and the protection circuit of claim 1. 12. A gate driving circuitry according to claim 11, wherein the p-type back-to-back MOS switch comprises a first p-channel MOSFET and a second p-channel MOSFET, wherein the sources of the first p-channel MOSFET and a second p-channel MOSFET are connected to each other and the gates of the first p-channel MOSFET and a second p-channel MOSFET are connected to each other. 13. A gate driving circuitry according to claim 11 further comprising an inverter circuit for inverting an input signal and to provide the inverted input signal as the input driving signal to the driving signal input terminal. 14. A gate driving circuitry according to claim 13, wherein the inverter circuit is configured to operate as a lever shifting circuitry which is configured to receive an input signal which varies between a ground voltage and another supply voltage which is lower than the supply voltage of the gate driving circuitry. 15. A gate driving circuitry according to claim 11, wherein the p-type back-to-back MOS switch couples an output terminal of the circuitry to the supply voltage if the input signal of the gate driving circuitry is high, the gate driving circuitry further comprises a n-channel MOSFET for coupling the output terminal to the ground voltage if an input signal of the gate driving circuitry is low. 16. A gate driving circuitry according to claim 11, further comprising an overload protection circuit which is configured to protect the n-channel MOSFET for an overload. 17. A gate driving circuitry according to claim 11, wherein at least one of the p-type back-to-back MOS switch, the driving signal insulation switch and the gate source coupling switch are configured to withstand a high voltage. 18. A gate driving circuitry according to claim 17, wherein the high voltage is at least 5 times larger than the supply voltage of the gate driving circuitry. 19. An integrated circuit device comprising the gate driving circuitry according to claim 11. 20. An integrated circuit device comprising a protection circuit, wherein the protection circuit comprises: a driving signal input terminal for receiving an input driving signal;a driving signal output terminal for providing a driving signal to the common gates;a common source terminal for being coupled to the common sources;a driving signal insulation switch comprising a first conduction path terminal, a second conduction path terminal and a first switchable conduction path coupled between the first conduction path terminal and the second conduction path terminal, the first conduction path terminal being coupled to the driving signal input terminal, the second conduction path terminal being coupled to the driving signal output terminal, and the driving signal insulation switch being configured for arranging the first conduction path in a non-conducting mode if a voltage of the driving signal output terminal exceeds a supply voltage of the protection circuit; anda gate source coupling switch comprising a third conduction path terminal, a fourth conduction path terminal, a fifth terminal for receiving a reference voltage and a second switchable conduction path between the third conduction path terminal and the fourth conduction path terminal, the third conduction path terminal being coupled to the common source terminal and the fourth conduction path terminal being coupled to the driving signal output terminal, the gate source coupling switch being configured to arrange the second conduction path in a conducting mode if a voltage of the common source terminal raises above the reference voltage.
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이 특허에 인용된 특허 (7)
Teggatz Ross E. ; Devore Joseph A. ; Legat Timothy J. ; Pauletti Timothy P. ; Baldwin David J., Driver for controller area network.
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