Large area deposition and doping of graphene, and products including the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01B-001/04
C30B-029/02
C30B-031/02
C30B-031/04
C30B-031/22
C01B-031/04
B82Y-030/00
B82Y-040/00
출원번호
US-0942726
(2013-07-16)
등록번호
US-9418770
(2016-08-16)
발명자
/ 주소
Veerasamy, Vijayen S.
출원인 / 주소
Guardian Industries Corp.
대리인 / 주소
Nixon & Vanderhye P.C.
인용정보
피인용 횟수 :
2인용 특허 :
99
초록▼
Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C2H2, CH4,
Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C2H2, CH4, or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).
대표청구항▼
1. A doped graphene thin film structure including a graphene thin film and a metal catalyst thin film, the doped graphene thin film structure comprising: the doped graphene thin film directly or indirectly on the metal catalyst thin film having a substantially single-orientation large-grain crystal
1. A doped graphene thin film structure including a graphene thin film and a metal catalyst thin film, the doped graphene thin film structure comprising: the doped graphene thin film directly or indirectly on the metal catalyst thin film having a substantially single-orientation large-grain crystal structure,wherein the graphene thin film is 1-10 atomic layers thick, andwherein the doped graphene thin film has a sheet resistance less than 150 ohms/square. 2. The doped graphene thin film structure of claim 1, wherein the doped graphene thin film includes n-type dopants. 3. The doped graphene thin film structure of claim 1, wherein the doped graphene thin film includes p-type dopants. 4. The doped graphene thin film structure of claim 1, wherein the doped graphene thin film is doped with any one or more of: nitrogen, boron, phosphorous, fluorine, lithium, potassium, and sulfur. 5. The doped graphene thin film structure of claim 1, wherein the doped graphene thin film has a sheet resistance of 10-20 ohms/square.
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