Methods for wafer bonding, and for nucleating bonding nanophases
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-023/00
H01L-021/18
H01L-031/048
H01L-021/762
H01L-021/20
H01L-021/84
H01L-027/12
H01L-051/00
출원번호
US-0428696
(2013-09-25)
등록번호
US-9418963
(2016-08-16)
국제출원번호
PCT/US2013/061722
(2013-09-25)
국제공개번호
WO2014/052476
(2014-04-03)
발명자
/ 주소
Herbots, Nichole
Bennett-Kennett, Ross
Murphy, Ashlee
Hughes, Brett
Acharya, Ajjya
Watson, Clarizza
Culbertson, Robert
출원인 / 주소
ARIZONA BOARD OF REGENTS, A BODY CORPORATE OF THE STATE OF ARIZONA ACTING FOR AND ON BEHALF OF ARIZONA STATE UNIVERSITY
대리인 / 주소
McDonnell Boehnen Hulbert & Berghoff
인용정보
피인용 횟수 :
0인용 특허 :
10
초록▼
Substrates may be bonded according to a method comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly, and compressing the assembly in the presence of an oxidizing atmosphere under suitable conditions to form a bondi
Substrates may be bonded according to a method comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly, and compressing the assembly in the presence of an oxidizing atmosphere under suitable conditions to form a bonding layer between the first and second surfaces, wherein the first bonding surface comprises a polarized surface layer; the second bonding surface comprises a hydrophilic surface layer; the first and second bonding surfaces are different.
대표청구항▼
1. A method for bonding substrates comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly; andcompressing the assembly in the presence of an oxidizing atmosphere under suitable conditions to form a bonding layer betw
1. A method for bonding substrates comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly; andcompressing the assembly in the presence of an oxidizing atmosphere under suitable conditions to form a bonding layer between the first surface and the second surface, wherein the conditions comprise application to the assembly of an electromagnetic field; wherein the first bonding surface comprises a polarized surface layer;the second bonding surface comprises a hydrophilic surface layer;the first bonding surface and the second bonding surface are different. 2. The method of claim 1, wherein the electromagnetic field applied comprises a voltage of at least 10 volts. 3. The method of claim 1, wherein the compressing is at a pressure between about 0 and about 10 MPa. 4. The method of claim 1, wherein the compressing is at a temperature less than about 1450° C. 5. The method of claim 1, wherein the first substrate and the second substrate each independently comprises (i) an optionally doped group IV element, an optionally doped IV-IV multi-element semiconductor, or an optionally doped IV-IV-IV multi-element semiconductor;(ii) a polymorphic phase, oxide, nitride, oxynitride, carbide, oxycarbide, oxynitrocarbide, or hydride of an optionally doped group IV element, or an optionally doped IV-IV multi-element semiconductor, or an optionally doped IV-IV-IV multi-element semiconductor; or(iii) Al, Al2O3, Ti, TiO2, or any oxide, nitride, oxynitride, carbide, oxycarbide, and oxynitrocarbide of Ti, TiW, Nb, Ta, Zr, Er, or La, or mixtures thereof, or a peroskvite compound used in refractory MOS gates,wherein any of (i)-(iii), each has an optionally hydroxylated-terminated surface or hydride-terminated surface. 6. The method of claim 5, wherein the first substrate and the second substrate each independently comprises Si, SixGe1-x, GaAs, Si1-x-yGexCy, Si3 (1-x)Ge3xN4(1-δ), Ge, Ga1-xAlxAs, SixGe(1-x)(OyN1-y)n, Si1-x-yGexCy(OxN1-x)n, (Si1-x-yGexCy)3N4-x-y, SiO2, GeO2, SixGe1-xO2, Si1-x-yGexCyO2, GexC1-xO2, Si3N4, Si1-x-yGexSny, Si1-x-y-zGexSnyCz, GexC1-x, Si3(1-x)Ge3xN4(1-δ), TiO2, or any oxide, nitride, oxynitride, carbide, oxycarbide, and oxynitrocarbide of Ti, TiW, Nb, Ta, Zr, Er, or La, or mixtures thereof. 7. The method of claim 5, wherein the first substrate and the second substrate each independently comprise Si, SiO2, SiGe, SiGe oxide, SiN, SiC, Al, and Al2O3. 8. The method of claim 1, wherein the first substrate and the second substrate are each wafers or beads. 9. The method of claim 1, wherein the oxidizing atmosphere is air. 10. The method of claim 1, wherein the compressing is maintained for up to 2 hours. 11. The method of claim 1, wherein the bonding layer has a bonding strength of at least 10 MPa. 12. The method of claim 1, wherein the first substrate is a Si wafer and the second substrate is a silicate wafer. 13. The method of claim 12, wherein the first bonding surface is O2H2Si(1×1)(100) and is formed by cleaning the Si wafer with the Herbots-Atluri clean. 14. The method of claim 13, wherein the second bonding surface is formed by chemical etching followed by chemical oxidation of the silicate wafer. 15. The method of claim 12, wherein the bonding layer consists essentially of silicon, oxygen, and hydrogen. 16. The method of claim 1, wherein the first substrate is a Si wafer and the first bonding surface is O2H2Si(1×1)(100). 17. The method of claim 1, wherein the second substrate is a silicate wafer and the second bonding surface is SiOx, where 0
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이 특허에 인용된 특허 (10)
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